SF4001_10 VISHAY
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Technical content
Ultra-Fast Avalanche Sinterglass Diode SF4001, SF4002, SF4003, SF4004, SF4005, SF4006, SF4007 Vishay Semiconductors Document Number: 86060 For technical ques tions within your region, please contact one of the following: www.vishay.com MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
FEATURES
- Glass passivated
- Hermetically sealed axial leaded glass envelope
- Low reverse current
- High reverse voltage
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
- Switched mode power supplies
- High-frequency inverter circuits 949539 PARTS TABLE PART TYPE DIFFERE NTIATION PACKAGE SF4001 V R = 50 V; IFAV = 1 A SOD-57 SF4002 V R = 100 V; IFAV = 1 A SOD-57 SF4003 V R = 200 V; IFAV = 1 A SOD-57 SF4004 V R = 400 V; IFAV = 1 A SOD-57 SF4005 V R = 600 V; IFAV = 1 A SOD-57 SF4006 V R = 800 V; IFAV = 1 A SOD-57 SF4007 V R = 1000 V; IFAV = 1 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage = repetitive peak reverse voltage See electrical characteristics SF4001 V R = VRRM 50 V SF4002 V R = VRRM 100 V SF4003 V R = VRRM 200 V SF4004 V R = VRRM 400 V SF4005 V R = VRRM 600 V SF4006 V R = VRRM 800 V SF4007 V R = VRRM 1000 V Peak forward surge current t p = 10 ms, half sine wave I FSM 30 A Average forward current Lead length l = 10 mm I FAV 1A Junction and storage temperature range T j = Tstg - 55 to + 175 °C Non repetitive reverse avalanche energy I (BR)R = 0.4 A E R 10 mJ
SF4001, SF4002, SF4003, SF4004, SF4005, SF4006, SF4007 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 86060 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient Lead length l = 10 mm, TL = constant R thJA 45 K/W On PC board with spacing 25 mm R thJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 1 A SF4001 V F --1 V SF4002 V F --1 V SF4003 V F --1 V SF4004 V F --1 V SF4005 V F -- 1 . 7 V SF4006 V F -- 1 . 7 V SF4007 V F -- 1 . 7 V Reverse current VR = VRRM IR --5 μ A VR = VRRM, Tj = 125 °C I R - - 50 μA Reverse breakdown voltage I R = 100 μA SF4001 V (BR)R 50 - - V SF4002 V (BR)R 100 - - V SF4003 V (BR)R 200 - - V SF4004 V (BR)R 400 - - V SF4005 V (BR)R 600 - - V SF4006 V (BR)R 800 - - V SF4007 V (BR)R 1000 - - V Reverse recovery time I F = 0.5 A, IR = 1 A, iR = 0.25 A SF4001 t rr - - 50 ns SF4002 t rr - - 50 ns SF4003 t rr - - 50 ns SF4004 t rr - - 50 ns SF4005 t rr - - 75 ns SF4006 t rr - - 75 ns SF4007 t rr - - 75 ns 100 120 151050 2 02 53 0 RthJA - Ther. Resist. Junction/Ambient (K/W) l - Lead Length (mm)949552 ll TL = constant 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C)96 12130 IFAV - Average Forward Current (A) VR = VRRM f ≤ 1 kHz RthJA ≤ 100 K/W PC board SF4001 to SF4004
SF4001, SF4002, SF4003, SF4004, SF4005, SF4006, SF4007 Ultra-Fast Avalanche Sinterglass Diode Vishay Semiconductors Document Number: 86060 For technical ques tions within your region, please contact one of the following: www.vishay.com Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 4 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Max. Average Forward Current vs. Ambient Temperature Fig. 6 - Max. Forward Current vs. Forward Voltage Fig. 7 - Max. Forward Current vs. Forward Voltage Fig. 8 - Max. Reverse Current vs. Junction Temperature 96 12131 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) IFAV - Average Forward Current (A) VR = VRRM f ≤ 1 kHz RthJA ≤ 100 K/W PC board SF4005 to SF4007 96 12052 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) IFAV - Average Forward Current (A) VR = VRRM f ≤ 1 kHz RthJA ≤ 45 K/W l = 10 mm SF4001 to SF4004 96 12053 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) IFAV - Average Forward Current (A) VR = VRRM f ≤ 1 kHz RthJA ≤ 45 K/W l = 10 mm SF4005 to SF4007 0.001 0.01 0.1 VF - Forward Voltage (V)96 12048 IF - Forward Current (A) Tj = 175 °C SF4001 to SF4004 Tj = 25 °C 0.001 0.01 0.1 VF - Forward Voltage (V)96 12050 IF - Forward Current (A) Tj = 175 °C SF4005 to SF4007 Tj = 25 °C 100 1000 25 50 75 100 125 150 175 Tj - Junction Temperature (°C)96 12056 IR - Reverse Current (μA) SF4001 to SF4007 VR = VRRM
SF4001, SF4002, SF4003, SF4004, SF4005, SF4006, SF4007 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 86060 PACKAGE DIMENSIONS in millimeters (inches): SOD-57 100 150 200 250 300 350 400 450 500 25 50 75 100 125 150 175 Tj - Junction Temperature (°C)16476 VR = VRRM PR - Reverse Power Dissipation (mW) SF4004 SF4004 SF4007 PR - Limit at 100 % VR SF4007 PR - Limit at 80 % VR PR - Limit at 100 % VR PR - Limit at 80 % VR 0.1 1 10 100 VR - Reverse Voltage (V)16477 CD - Diode Capacitance (pF) f = 1 MHz SF4004 SF4007 20543 3.6 (0.142) max. 0.82 (0.032) max.
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