SE3401 LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS -30V
  • ID -4.4A
  • RDS(ON)( at VGS=-10V) ＜55 mohm
  • RDS(ON)( at VGS=-4.5V) ＜68 mohm
  • RDS(ON)( at VGS=-2.5V) ＜96 mohm General Description
  • Trench Power LV MOSFET technology
  • High density cell design for Low RDS(ON)
  • High Speed switching

Applications

  • Battery protection
  • Load switch
  • Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±12 V Drain Current TA=25℃ @ Steady State ID -4.4 A TA=70℃ @ Steady State -3.5 Pulsed Drain CurrentA IDM -27 A Total Power Dissipation @ TA=25℃ PD 1.2 W Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 105 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE F2 3401. 3000 7“ reel SE3401 Enhancement Mode Power MOSFET SE3401 P-Channel Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA Gate-Body Leakage Current IGSS VGS= ±12V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -0.6 -0.9 -1.4 V Static Drain-Source On-Resistance RDS(ON) VGS= -10V, ID=-4.4A 45.5 55 mΩ VGS= -4.5V, ID=-4A 52 68 VGS= -2.5V, ID=-2A 64 96 Diode Forward Voltage VSD IS=-4.4A,VGS=0V -0.8 -1.2 V Maximum Body-Diode Continuous Current IS -4.4 A Dynamic Parameters Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHZ 680 pF Output Capacitance Coss 105 Reverse Transfer Capacitance Crss 68 Switching Parameters Total Gate Charge Qg VGS=-10V,VDS=-15V,ID=-4.4A 7.2 nC Gate Source Charge Qgs 1.2 Gate Drain Charge Qgd 1.6 Turn-on Delay Time tD(on) VGS=-10V,VDD=-15V,RL=15Ω, ID=-1A, RGEN=2.5Ω ns Turn-on Rise Time tr 63 Turn-off Delay Time tD(off) 21 Turn-off Fall Time tf 12 A. Pulse Test: Pulse Width ≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. SE3401 Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance SE3401 Rev : www.leiditech.com 01.06.2018 3/5

Figure7. Safe Operation Area Figure8. Switching wave SE3401 Rev : www.leiditech.com 01.06.2018 4/5

■ SOT-23 Package information ■ SOT-23 Suggested Pad Layout SE3401 Shangh ai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5