SE2306 LEIDITECH
Document overview
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- PDF pages: 6
Technical content
LCE N-Channel Enhancement Mode Power MOSFET
Description
The SE2306 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features
- V DS = 20V,I D = 6A R DS(ON) < 35mΩ @ V GS =2.5V R DS(ON) < 28mΩ @ V GS =4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package Application
- Uni-directional Load switch
- Bi-directional Load switch D G S Schematic diagram SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
3420 SE2306 SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 30 A Maximum Power Dissipation P D 1.25 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 22 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 μA Rev : 01.06.2014 1/6 www.leiditech.com SE2306
Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.7 1.0 V V GS =2.5V, I D =4.0 A - 27 35 mΩ Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =5.0A - 20 28 mΩ Forward Transconductance g FS V DS =5V,I D =6A - 25 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 515 - PF Output Capacitance C oss - 90 - PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz - 72 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 3 - nS Turn-on Rise Time t r - 7.5 - nS Turn-Off Delay Time t d(off) - 20 - nS Turn-Off Fall Time t f V DD =10V, R L =1.7Ω V GS =10V,R GEN =3Ω - 6 - nS Total Gate Charge Q g - 12 - nC Gate-Source Charge Q gs - 1 - nC Gate-Drain Charge Q gd V DS =10V,I D =6A,V GS =10V - 2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A - - 1.2 V Diode Forward Current (Note 2) I S - - 6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production Rev : 01.06.2014 2/6 www.leiditech.com SE2306
Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance Pb Free Product Rev : 01.06.2014 4/6 www.leiditech.com SE2306
- All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° Pb Free Product Rev : 01.06.2014 6/6 www.leiditech.com Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86 - 021 50477059 SE2306