SE2305A LEIDITECH
Document overview
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- PDF pages: 4
Technical content
Features
V DS -20V
- R DS(on) 50mΩ @V GS -4.5V，I D = -4.2A
- R DS(on) 70mΩ@V GS -2.5V，I D = -3A
- R DS(on) 105mΩ@V GS -1.8V，I D = -1A Application
- Load Switch
- A Switch and Battery Switch for Portable Devices Revision:B Pin configurations( SOT23 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage V -20 V DS Gate-Source Voltage V ±12 V GS 25°C -4.7 A Drain Current (Note 1) I D -20 Pulsed Drain Current @TA=25°C 1.1 W Total Power Dissipation P D 0.7 @TA=75°C Operating Junction Temperature Range T -55 to 150 °C J SE2305A Enhancement Mode Power MOSFET P-Channel Rev : www.leiditech.com 01.06.2015
Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage Typical Characteristics I D =-250μA, V GS =0 V -20 - - V IDSS Zero Gate Voltage Drain Current V DS =-20V, V GS =0 V - - -1 μA IGSS Gate-Body leakage current =±12 V μA V DS =0 V, V GS - - ±100 V GS (th) Gate Threshold Voltage =-250μA V DS GS D =-4.2A V GS D V GS =-2.5V, I D =-3A 0.065 0.070 Ω R Static Drain-Source On-Resistance DS(ON) =-1A V GS D DYNAMIC PARAMETERS Input Capacitance 415 pF C - - iss C oss Output Capacitance - 223 - pF C rss Reverse Transfer Capacitance V GS =0V, V DS =-6V, f = 1.0 MHz 87 pF - - Q 36 Total Gate Charge 24 nC g Q gs Gate-Source Charge 18 nC V Q gd Gate-Drain Charge DS =-10V,I =-4.7A, D V GS =-4.5V nC 2.7 SWITCHING PARAMETERS t d(on) Turn-On DelayTime - 22 35 ns t d(off) Turn-Off DelayTime - 45 70 ns V =-10V, V =-4.5V, DD GEN Tr Turn-on Rise Time 35 55 ns Tf Turn-on Fall Time R L =10Ω, R G =6Ω =-1A I D 25 40 ns Rev : www.leiditech.com 01.06.2015 SE2305A
Rev : www.leiditech.com 01.06.2015 SE2305A
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015 SE2305A