SDR504

SDR504 ETC

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SOLID STATE DEVICES INC Lee D JJ s3et013 0001860 5 i - 03-2 ULTRA FAST RECOVERY RECTIFIER | se22vess: La Mirada, California 90638 (213) 921-9660 TWX 910-583-4807 400- 1000 VOLTS FAX 213-921-2396 FEATURES DO-5 PACKAGE ria * PIV 400 To 1000 vorts |,” | oy © ULTRA FAST SWITCHING =" “ANY: 115 OI LO \\ 60 Nsec. TYPICAL some NE e LOW REVERSE LEAKAGE N y) — 4 we f ¢@ LOW THERMAL IMPEDANCE 7 —— H Zip ¢ HIGH SURGE CAPABILITY oor a — ar 4 43 MAXIMUM RATINGS Z b-26 wie-28 Peak Repetitive Reverse Voltage Vem (rep) Volts and DC Blocking Voltage SOR 504 Va | 400 : SDR 506 | 600 | 2) SOR 508 | 800 | t SDR 510 | 1000! i | RMS Reverse Voltage SDR 504 vy, | 280 ! Volts ; ; SOR 506 | ; 420! sor 508 | ; 560; i SOR 510 ! : 700: | { . | . 1 1 . { Average 1/2 Wave Rectilied Forward Current | lo H 50 fi Amp (Resistive Load, 60 Hz. Te = 25°C) i : . Peak Repetitive Forward Current 1 ; i Amp (Tg = 35°C) FM (rep) | 90 | Peak Surge Current - lem (surge) } 625 | Amp (Tg = 55 °C, Superimposed on Rated Current at Rated Voltage) | i THERMAL CHARACTERISTICS Thermal Resistance. Junction to Ambient L = 3/8" : Rose po fm (typical printed circuit board mounting) NOTE: All specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS «SOLID. STATE DEVICES INC 1-03 “DI wae p Pfszeeo11 conan. 7 ff Max Full Cycle Average Forward Voltage Drop Ve(avy 85 Volts (lg (Max) fated V,, 60 Hz, Tg = 55°C) Max Instantaneous Forward Voltage Drop Ve 1.7 Volts eS (lp = 50 -amps, Ty = 25°C) Max Full Cycle Average Reverse Current Ip (av) mA (lp (max): rated V,, 60 Hz, To = 100°C) Max DC Reverse Current uA (Rated Va To = 25°C) REVERSE RECOVERY CHARACTERISTICS Reverse Recovery Time tie 60 (lp = 500ma, Ih = 1A, Vip = 250ma) wars 100- o> | sie tif | F +t a a Peak Repetitive y |] N cn ss . tt clo Surge Time in Seconds VE - IF @ 25°C *T en ee ere wl tt Doe t i 5 espe merHri peat 10008 ppomperage po ope pny, | JN, PR SS 100A pee Sone PA Py rc i ag ait i iif pips ceil Brit eZ. =) MOUNTING, TEMPERATURE Cc ("> Bs queens ee \\sdet a PITY : Ly ar SE pS ae An ped FR a in ia See mail IH tl" pee Pi BES ES isa. S=pt6k petra . 100A 10004 nN SSDil SOLID STATE DEVICES, INC. ee P.O. Box 577. La Mirada, California 90637 Telephone: (213) 921-9660 » TWX 910-583-4807 + FAX#213-921-2396

SOLID STATE DEVICES INC 12E D | Eros OOOL8b4 2 | |

14830 Valley View Avenue

RECOVERY RECTIFIER | czcuccs: 1213) 921-9660 TWX 910-583-4807 400 —-1000 VOLTS FAX 213-921-2396 CASE STYLE ' FEATURES T-03-al —|70 ax} — ie"? =e += PIV 400 TO 1000 VoLTS me + @ ULTRA FAST SWITCHING 60 NSEC TYPICAL © LOW REVERSE LEAKAGE sto eal BASE IAC, DUA. ¢ LOW THERMAL IMPEDANCE | | l | SL © HIGH SURGE CAPABILITY 1.35 — ¢ REVERSE POLARITY UNITS CAN BE SUPPLIED. | so |=" TOLERANCE 3 5 «03, ADD SUFFIX "R" TO PART NUMBER ‘ MAXIMUM RATINGS Peak Repetitive Reverse Voltage Vem (rep) Volts and - DC Blocking Voltage SDR 1004 VR 400 SDR 1006 600 : SDR 1008 800 “ SDR 1010 tooo RMS Reverse Voltage SDR 1004 V, 280 Volts SDR 1006 420 SDR 1008 560 SDR 1010 700 Average 1/2 Wave Rectified Forward Current Amp (Resistive Load, 60 Hz, Tg = 25°C) Peak Repetitive Forward Current . "eM (rep) (Tg = 55 °C) Peak Surge Current - ‘em (surge) 1250 (T, = 55 °C, Superimposed on Rated Current at Rated Voltage) THERMAL CHARACTERISTICS SS Thermal Resistance, Juncion wo Ambient Roic °C/W (typical printed circuit board mounting) NOTE: All specifications subject to change without notice.

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ELECTRICAL CHARACTERISTICS

a eonecoretenme | tw Le le Max Instantaneous Forward Voltage Drop Ve 1.7 Volts (lg = 100 Amps, Ty = 25°C) Max Reverse Current 2 mA rated V,, 60 Hz, Tg = 100°C) Max DC Reverse Current ny (Rated Vp. To = 25°C) REVERSE RECOVERY CHARACTERISTICS Reverse Recovery Time (Ip = 500ma, Ip = 1A, 1,, = 250ma) on DERATING CURVE AL EHH ‘ HEH ian Coo © i PEAK REPETITIVE SURGE VF - IF @ 25°C H+ TIME IN SECONDS Ca a aC ; oe . . MOUNTING TEMPERATURE °C 1 petitin eile sity a ae eect eanetiwemmeu a [=o Cen HI Sick aes Saas Be Ea i etc oS pe Alege Pea = el Ge | eels af oe SSeS SS | ECA na Hi aa = aa, a 1 ii aii | wy s SSpy lh.

ener reer eee rere e erence SOLID STATE DEVICES INC 12E D Jje3ee022 oooLab? & I : . . . SSDI] Solid State Devices, Incorporated €PIDN: . 14830 Valley View Avenue La Mirada, California 90638 - Telephone: (213) 921-9660 - TWX 910-583-4807 NEW EPION ION-IMPLANTED DIODES NOW AVAILABLE FROM SSDI T- 03 rf Solid State Devices, Inc. makes the world’s only available ion-implanted behavior. Because maximum impurity concerlraties it just below the semiconducters, with all standard catalog items available for off-the-shelf crystal surface (depths of a few hundred angstroms), forward and reverse Gelivery. SSDI's breskthrough in semiconductor construction permits an recovery characteristics are improved by the inability of the thin implented ‘unusual combination of features not obteinable with diodes and rectifiers junction to store carriers. In the actual manufecture of Epion implanted menufectured by other processes. These include extremely fast turn-on semiconductors, a lower temperature can be used for doping, or implanting and reverse recovery times, exceptionally low power dissipation (one-sixth the ions, than is necessary with other methods. Dopants are directionally to one-half the conventional voltage drop! and high current pulse handling placed in the crystal lattice with virtually no lateral migration. This pro- capability, both continuous and surge. Applications for these diodes and vides low surface spreading resistance for high pulse current capability rectifiers include clamps, shunts, high frequency switching, miniaturized and fast forward recovery. Further high speed characteristics are achieved power supplies, core memories, modulators and other spplications where without requiring gold doping or other forms of crystal degradation, the combination of high speed, high current-carrying capability and low —SSDI's ultra-high speed characteristics are achieved without affecting forward voltage drop is inportant. . radiation resistance. WHY ION-IMPLANTATION? The Epion implantation of ions into semi- The Epion diodes described in this catalog are available for immediate conductor crystal surfeces is @ new method of controlling electrical delivery. {f you have special requirements, please contact SSDI. Epion implanted silicon-diodes are hermetically sealed with weldable gold-plated leads. wax HSA/18 . v@}re@e]ure}re| rele = sles |ers |r tre [on Vf1=250 mV max. ¢A ‘TYPE NO. ‘PRY | PRY | 500 mw | S00 mw | S00 mw | $00 me | $00 ww 200 to 600 mA PRY, Vis be outs} wa | ma | mk | mk | mk | om ELECTRICAL CHARACTERISTICS © 25°C bed cn 3 4 200 300 400 300 600 . . z(t 200 300 400, 500 600 Vi Forward Threshold @ 1 MA —n..0.226 Volt Max. TALC 75} 10} 200°} 300 | 400 | soo | 600 Pn ceremennnenns POWEE Dissipation ® nen ennesnnnenns BOO mw Max. TAZ Ot 75] 201 200 300 400 sO 600 “Lower Forward Voltages Available, Consult Factory WOAZ( Mt 100} 20] 200 300 400 00 oo e@ OAS ( 100] 50 | 200 300 400 ‘300 0 HSB/18 Vf1= 325 mV max. (B) . 200 to GOO mA ELECTRICAL CHARACTERISTICS @ 25°C Tr Forward Recovery nanan nnnn 0.5 NS00 Max. ‘Tor Reverse Recovery* 3 NSec Max. P _...-—Power Dissipation® BOO mw Max, feurge Surge Current 1 uS0¢ nn nnn.nn-- BO Amps Max. wan, welue}ue;ure} ue ue S|e= | r= |] ea | ee | ee TWPE WO. av | av | 500 me | $00 mee | $00 mw | $00 mw | 500 me PAV, Vays tes by OLS] uA | mA mA eA ery mh bad a julescent. * 26°C free alr mounted 1/16" rom package, ser $0] 10 | 200 | 300 | 400 | S00 | 600 5B2( Ot 50] 20] 200 300 400 00 600 SB5( Mt 50] 50] 200 300 400 500 600 781 ot 75] 10 | 200°} 300 400 500 600 7B2¢ Mt 75 | 20] 200 300 400 sO 600 785( It 75| 50} 200 | 300 | «00 | soo | 600 O~ 18 PHYSICAL DIMENSIONS : top t it 100 J 10 | 200 } 300 | 400 | S00 | 600 uo 10B2( 100} 20] 200 300 400 $00 00 10BS¢ It 100 | 50] 200 300 400 ‘$00 600 hemeh a on ow carmen : n- anaoe ome ere we eB : ye : it bid 24 bid Ordering Information: first digit indicates PRY, letter indicates forward voltage drop bend id a2''mA, scond cigii indicates ieskage at halt the PAV: and the ast digit indicates se atc ononen moe tae the forward voltage for a power dissipation of 500 mw ai the rated current, Example: SA15/38 thls 1sa.50 voll device, with a Ve at 1 mA! 225 mV, ip leakage) i540 uA at .5 PRV (which is 25 Vb, plus a forward voltage of 1 V maximum at 500 mA current handling capacity, The /16 indicates the TO 18 package. t ‘See reverse side for HSA/18.C 12/84 :

a SOLID STATE DEVICES INC 703-09 W2E D ffaabb012 Ooo1aLa T | T-03-I/ Epion implanted silicon-diodes are hermetically sealed with weldable gold-plated leads. wax HSC/18 Wer 10 nv |S v[p Sanne]? Scomele sotime |? sodme Vt1=450 mV max. (C) pay t te Wwoust at [oma - ere ones 400 to 700 mA scr at so] 10 | «00 | soo | 600 | 700 sc2c $0 | 20 400 00 600 700 ELECTRICAL CHARACTERISTICS @ 25°C tease so] 5 | sco | 500 seo ™ “ reat it 0 | 400 | S00 Wane fooorert= oo Neve mine wz 75 | 20 | «00 | soo | 600 | 700 3+ Massy 0 ulescent. 5+ 2Erc free alr mounted 1/16" from package. roma, ‘iecond ial ncleater tenkace at hail tne BAW. and tne last dient talcatet . . the forward voltage for a power dissipation of 500 mw at the rated current. Example: ’ Baa Stee thisisa ‘50 volt device, with a Veat 1 MA of 225 Ry ate, (leakage) Is 5) ux at 5 PRV (which is 25 V), pls & Yorward Holtage af 2° insximum at 800 mA . current handling capacity. The /16 indicates the TO 18 package. TO-18 PHYSICAL DIMENSIONS wie “uy e eal via) i “ oy Cd bad RNS to note omenen tno NOTE: Specifications are subject to change without notice. SSDI SOLID STATE DEVICES, INC. : ; ———— P.O. Box 577, La Mirada. California 90637 Telephone: (213) 921-9660 + TWX 910-583-4807 + FAX#213-921-2396