SDM03U40Q LEIDITECH

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Technical content

Features

Extremelysmall surface mounting type. (SOD523) I O =200mA guaranteed despite the size. Low V F z Construction Silicon epitaxial planar z Device Marking Shipping SDM03U40Q S 3000/Tape&Reel We declare that the material of product compliance with RoHS requirements.

Ordering Information

F

0.45 V I

F =100mA Forward voltage V F

0.52 V I

F =200mA 0.16 0.31 0.37 ESD break down voltage 8 C=100pF,R=1.5K forward and reverse:1 time ESD K Ω Reverse current I R 90 µΑ V R =40V V SDM03U40Q Dimensions SOD-523 Pin Configuration Rev : www.leiditech.com 1/3 01.06.2015 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ƽ

zElectrical characteristic curves 0.01 0.1 100 1000 10000 100000 0 102 03 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=150℃ FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:VR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS REVERSE POWER DISSIPATIONP R (w) REVERSE VOLTAGE：VR(V) VR-P R CHARACTERISTICS 100 1000 0 100 200 300 400 500 600 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=150℃ 470 480 490 500 510 520 Ta=25℃ IF=200mA n=30pcs AVE:495.2mV 100 Ta=25℃ VR=40V n=30pcs AVE:6.86uA AVE:27.2pF AVE:5.60A 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=20mA 300us time Mounted on epoxy board 0.05 0.1 0.15 0.2 0.25 0.3 0 0.1 0.2 0.3 0.4 0 102 03 04 0 Sin(θ＝180) D=1/2 DC 100 01 0 20 30 Ta=25℃ f=1MHz VR=0V n=10pcs f=1MHz 8.3ms Ifsm 1cyc DC D=1/2 Sin(θ＝180) AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIED FORWARD CURRENT Io(A) CASE TEMPARATURE：Tc(℃) Derating Curveﾞ(Io-Tc) 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 Sin(θ＝180) D=1/2 DC 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 Sin(θ＝180) D=1/2 DC T Tj=150℃ D=t/Tt VR Io VR=20V T Tj=150℃ D=t/Tt VR Io VR=20V Rev : www.leiditech.com 2/3 01.06.2015 SDM03U40Q

Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Millimeters Inches Symbol Min. Nom. Max. Min. Nom. Max. B 0.70 0.80 0.90 0.028 0.032 0.035 D 0.25 0.30 0.35 0.010 0.012 0.014 K 0.15 0.20 0.25 0.006 0.008 0.010 Symbol Millimeters Inches E 1.40 0.0547 F 0.40 0.0157 G 0.40 0.0157 Soldering Footprint Rev : www.leiditech.com 3/3 01.06.2015 SDM03U40Q