SD800C24L_12 VISHAY
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Document Number: 93553 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 1 Standard Recovery Diodes (Hockey PUK Version), 1200 A SD800C..L Series Vishay High Power Products
FEATURES
- Wide current range High voltage ratings up to 4500 V High surge current capabilities Diffused junction Hockey PUK version Case style DO-200AB (B-PUK) Lead (Pb)-free TYPICAL APPLICATIONS Converters Power supplies Machine tool controls High power drives Medium traction applications ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IF(AV) 1200 A DO-200AB (B-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS SD800C..L UNITS
24 TO 36 40 TO 45
IF(AV) 1180 1065 A Ths 55 55 °C IF(RMS) 2280 2040 A Ths 25 25 °C IFSM
50 Hz 13 600 12 200
A
60 Hz 14 240 12 800
50 Hz 925 745
60 Hz 845 680
VRRM Range 2400 to 3600 4000 to 4500 V TJ - 40 to 150 - 40 to 150 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA SD800C..L 24 2400 2500 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93553
2 Revision: 14-May-08
SD800C..L Series Vishay High Power Products Standard Recovery Diodes (Hockey PUK Version), 1200 A Note The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS SD800C..L UNITS Maximum average forward current at heatsink temperature IF(AV) 180° conduction, half sine wave Double side (single side) cooled 1180 (550) 1065 (490) A 55 (85) 55 (85) °C Maximum RMS forward current I F(RMS) 25 °C heatsink temperature double side cooled 2280 2040 AMaximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 13 600 12 200 t = 8.3 ms 14 240 12 800 t = 10 ms 50 % V RRM reapplied 11 440 10 250 t = 8.3 ms 11 980 10 750 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 925 745 kA2s t = 8.3 ms 845 680 t = 10 ms 50 % VRRM reapplied 654 526 t = 8.3 ms 597 480 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 9250 7450 kA 2√s Low level value of threshold voltage V F(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.90 1.06 V High level value of threshold voltage V F(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.10 1.18 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.38 0.44 mΩ High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.34 0.41 Maximum forward voltage drop V FM Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.66 1.95 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 40 to 150 Maximum storage temperature range T Stg - 55 to 200 Maximum thermal resistance, junction to heatsink RthJ-hs DC operation single side cooled 0.073 K/W DC operation double side cooled 0.031 Mounting force, ± 10 % 14 700 (1500) N (kg) Approximate weight 255 g Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 TJ = TJ maximum K/W 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036
Document Number: 93553 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 3 SD800C..L Series Standard Recovery Diodes (Hockey PUK Version), 1200 A Vishay High Power Products Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics 100 110 120 130 140 150 0 100 200 300 400 500 600 700 800 900 30° 60° 90° 120° 180° Average Forward Current (A) Maxi mum Al lowabl e Heats ink Temper ature (°C) Conducti on Angl e SD800C..L Series (2400V to 3600V) (Single Side Cooled) R (DC) = 0.073 K/W thJ-hs 100 110 120 130 140 150 0 200 400 600 800 1000 1200 1400 30° 60° 90° 180° DC 120° Average Forward Current (A) Maxi m um Al lowable Heatsi nk Tem perature (°C) Co nducti on Pe ri od SD800C ..L Series (2400V to 3600V) (S in g le Sid e C o o le d ) R (D C ) = 0.073 K/ W thJ-hs 100 110 120 130 140 150 0 400 800 1200 1600 30° 60° 90° 120° 180° Avera ge Forwa rd Current (A) Maxi mu m All owab le Heatsi nk Temperature (°C) Conducti on Angle SD800C..L Series (2400V to 3600V) (Double Side Cooled) R (DC) = 0.031 K/W thJ-hs 100 110 120 130 140 150 0 400 800 1200 1600 30° 60° 90° 120° 180° Avera ge Forwa rd Current (A) Maxi mu m All owab le Heatsi nk Temperature (°C) Conducti on Angle SD800C..L Series (2400V to 3600V) (Double Side Cooled) R (DC) = 0.031 K/W thJ-hs 100 110 120 130 140 150 0 100 200 300 400 500 600 700 800 30° 60° 90° 120° 180° Average Forward Current (A) Maximum Al lo wabl e Heatsink Temper ature ( °C) Conduction Angl e (Single Side Cooled ) R (DC) = 0.073 K/W thJ-hs SD800C..L Series (4000V to 4500V) 100 110 120 130 140 150 0 200 400 600 800 1000 1200 30° 60° 90° 180° DC 120° Average Forward Current (A) Maxi m um All owable Heatsi n k Tem perature (°C ) Conduction Peri od (S in g le Sid e C o o le d ) R (D C ) = 0.073 K/W thJ-hs SD 800C ..L Seri es (4000V to 4500V )
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4 Revision: 14-May-08
SD800C..L Series Vishay High Power Products Standard Recovery Diodes (Hockey PUK Version), 1200 A Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics Fig. 9 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics Fig. 11 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics 100 110 120 130 140 150 0 200 400 600 800 1000 1200 1400 30° 60° 90° 120° 180° Averag e Forw ard Current (A) Maximum Allowable Heatsink Temperature (°C) Conduction Angle (Double Side Cooled) R (DC) = 0 .03 1 K/W thJ-hs SD800C..L Series (4000V to 4500V) 100 110 120 130 140 150 0 400 800 1200 1600 2000 2400 30° 60° 90° 180° DC 120° Average Forw ar d Current ( A) Maxi mum Al lowabl e Heats ink Temperatur e (°C) Conduc tion Peri od (Double Si de C ool ed ) R (D C) = 0.031 K/W thJ-hs SD800C ..L Seri es (4000V to 4500V ) 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 1400 1600 180° 120° 90° 60° 30° RMS Limit Conduc tion Angle M aximum Average Forward Power Loss (W) Average Forward Current (A) SD800C..L Series (2400V to 3600V) T = 150 °C J 500 1000 1500 2000 2500 3000 3500 4000 4500 0 500 1000 1500 2000 2500 DC 180° 120° 90° 60° 30° RMS Limit Conducti on Period Maximum Average Forward Power Loss (W) Average Forward Current (A) SD800C..L Series (2400V to 3600V) T = 150 °C J 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 1400 180° 120° 90° 60° 30° RMS Limit Conduc ti on Angle Maximum Average Forward Power Loss (W) Average Forward Current (A) SD800C..L Series (4000V to 4500V) T = 150 °C J 500 1000 1500 2000 2500 3000 3500 4000 4500 0 4 0 0 8 0 0 1 2 0 01 6 0 02 0 0 02 4 0 0 DC 180° 120° 90° 60° 30° RMS Limit Conducti on Per iod Maximum Average Forward Power Loss (W) Average Forward Current (A) SD800C..L Series (4000V to 4500V) T = 150 °C J
Document Number: 93553 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 5 SD800C..L Series Standard Recovery Diodes (Hockey PUK Version), 1200 A Vishay High Power Products Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 001011 Number Of Equal Ampl itude Hal f Cycl e Current Puls es (N) Peak Half Sine Wave Forw ard Current (A) In it ia l T = 1 5 0° C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J SD 8 00C ..L Se rie s (2400V to 3600V ) At Any Rated Load Conditi on And W ith 50% Rated V Appli ed Following Surge RRM 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 11.010.0 Pulse Train Duration (s) Peak Half Sine Wave Forward Current (A) Maximum Non Repetitive Surge Current SD800C..L Series (2400V to 3600V) 50% Rated V Reapplied No Voltage Reapplied In itial T = 15 0 °C RRM J Vers us Pulse Trai n Durati on. 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 001011 Number Of Equal Am plitude Half Cycle Current Pulses (N) Peak Half Sine Wave Forward Current (A) Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With 50% Rated V Applie d Followin g Surge RRM SD800C..L Series (4000V to 4500V) 2000 4000 6000 8000 10000 12000 14000 0.01 0.1 1 Puls e T rai n Durati on (s) Pe ak Ha lf Sine W ave Forw ard C urrent (A) M axim um No n Repe titiv e Surge C urre nt Ve rsus Pulse T rain D uratio n. Initial T = 15 0 °C N o V o lt a g e R e a pp lie d 50% Rated V Reapplied RRM J SD 8 00C ..L Se rie s (4000V to 4500V ) 100 1000 10000 T = 25 ° C J Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) T = 150 °C J SD800C..L Series (2400V to 3600V) 100 1000 10000 T = 25°C J I nstantaneous Forward Volt age (V) I nst antaneous Forward Current (A) T = 150°C J SD 8 00C ..L Se rie s (4000V to 4500V )
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6 Revision: 14-May-08
SD800C..L Series Vishay High Power Products Standard Recovery Diodes (Hockey PUK Version), 1200 A Fig. 19 - Thermal Impedance ZthJ-hs Characteristics ORDERING INFORMATION TABLE 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 Square W ave Pulse D uration (s) thJ-hsT ransient Therm al Im pedance Z (K/W ) Steady State Value R = 0.073 K/W (Single Side C ooled) R = 0.031 K/W (Doubl e Side C ooled) (DC Operation) thJ-hs thJ -hs SD 800C ..L Series - Diode - Essential part number - 0 = Standard recovery - C = Ceramic PUK - Voltage code x 100 = V RRM (see Voltage Ratings table) - L = PUK case DO-200AB (B-PUK) Device code 513 24 SD 80 0 C 45 L LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246
Document Number: 95246 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 05-Nov-07 1 DO-200AB (B-PUK) Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 26.9 (1.06) 25.4 (1)
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