SC8 TRSYS
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Technical content
LiMiTED SILICON CONTROLLED RECTIFIERS @ 8 AContinuous On-State Current TO-220 PACKAGE @ 80 A Surge-Current (TOP VIEW) @ Glass Passivated Wafer | @ 400 V to 800 V Off-State Voltage AF 2 @ Max Ig7 of 20 mA Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT SC8-400-80 400 th SC8-600-80 600 Repetitive peak off-state voltage $c8-700-80 Vor 700 Vv SC8-800-80 800 SC8-400-80 400 Hh SC8-400-80 600 Repetitive peak reverse voltage $08-700-80 Var 700 Vv SC8-800-80 800 Continuous on-state current at (or below) 70°C case temperature (see Note 1) | lemy [| 8 OT OA ‘Average on-state current (180° conduction angle) at (or below) 70°C case temperature f A (see Note 2) TA) ‘Surge on-state current at (or below) 25°C case temperature (see Note 3) [tm [| 8% | A | Peak positive gate current (pulse width < 300 us) [lw | 3 | A | Peak gate power dissipation (pulse width < 300 1s) [Po | 5 | Ww | Average gate power dissipation (see Note 4) Operating case temperature range 40 to +110 ‘Storage temperature range -40 to +125 Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply for continuous de operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms.
SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS | min | Tye | max | UNIT Repetitive peak 7 a0" loRM —Gtt-state current Vp = rated Vorm To = 110°C 2 mA Repetitive peak \\ Vp = rated V Ig=0 To = 110°C 2 A RRM reverse current R RRM id c m let Gate trigger current Vaa = 12V RL= 1002 tig = 20 us [| 8 | 20 [ ma | Vaa=12V R= 1002 To =-40C 25 tyg 2 20 ps ° Vaa =12V RL = 1002 Ver — Gate trigger voltage AA t 15 7 tpg 2 20 ps Vaa=12V R, = 1002 To =110C 02 tig 2 20 ps ° Vaa = =- 40" Inn = 12V To =-40C 400 Initiating lr = 100 MA ly Holding current mA Vaa=12V 40 Initiating lr = 100 MA On-stat vz Onsiate Ip=8A (see Note 5) wiov voltage Critical rate of rise of vat Creal rate ofnse of |v < rated Vp Ig=0 To =110°C 400 Vins off-state voltage NOTE 5: This parameter must be measured using pulse techniques, t, = 300 us, duty cycle < 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER [min | TP | max | UNIT [Rise _ncTon ocasethemalresitance SS SSSSCSCSCS~C~SS 8 [Fux netontotresarthemalrestance—SSSSC*S*Y iC |
SILICON CONTROLLED RECTIFIERS Ca MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0-220 4,70 4,20 3,96 10,4 1,32, O37 10,0 2,95 1,23 2,54 Or # FL. 6,0 14,55 18,0 TYP. 61 14,1 1,47 12,7 0,97 ill 1,07 0,66 | Ula ¥ OD @)@ 2,34 0,41 5,28 2,90 4,68 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.