SBL4030PT_V01 VISHAY

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SBL4030PT, SBL4040PT www.vishay.com Vishay General Semiconductor Revision: 27-May-2020 1 Document Number: 88733 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Schottky Rectifier

FEATURES

  • Power pack
  • Guardring for overvoltage protection
  • Lower power losses, high efficiency
  • Low forward voltage drop
  • High forward surge capability
  • High frequency operation
  • Solder dip 260 °C, 40 s
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, fr eewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-3P (TO-247AD) Epoxy meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum Note (1) 2.0 μs pulse width, f = 1.0 kHz Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle PRIMARY CHARACTERISTICS IF(AV) 40 A VRRM 30 V, 40 V IFSM 400 A VF 0.50 V TJ max. 125 °C Package TO-3P (TO-247AD) Circuit configuration Common cathode TO-3P (TO-247AD) PIN 1 PIN 3 CASE PIN 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SBL4030PT SBL4040PT UNIT Maximum repetitive peak reverse voltage V RRM 30 40 V Maximum working peak reverse voltage V RWM 21 28 V Maximum DC blocking voltage V DC 30 40 V Maximum average forward rectified current at TC = 100 °C I F(AV) 40 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 400 A Peak repetitive reverse surge current per diode (1) IRRM 2.0 A Voltage rate of change at (rated VR) dV/dt 1000 V/μs Operating junction storage temperature range T J, TSTG -40 to +125 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SBL4030PT SBL4040PT UNIT Maximum instantaneous forward voltage per diode (1) IF = 20 A TC = 25 °C VF 0.58 V TC = 100 °C 0.50 Maximum instantaneous reverse current at rated DC blocking voltage per diode (1) TC = 25 °C T C = 25 °C IR mA TC = 100 °C T C = 100 °C 100

SBL4030PT, SBL4040PT www.vishay.com Vishay General Semiconductor Revision: 27-May-2020 2 Document Number: 88733 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SBL4030PT SBL4040PT UNIT Thermal resistance from junction to case per diode R JC 1.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PAC KAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD SBL4030PT-E3/45 6.13 45 30/tube Tube 0 50 100 150 Average Forward Current (A) Case Temperature (°C) 1 10 100 100 200 300 400 Number of Cycles at 60 Hz Forward Surge Current (A) 0.01 0.1 100 Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) TJ = 100 °C TJ = 25 °C 0 20 40 60 80 100 0.001 0.01 0.1 100 TJ = 100 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (mA)

SBL4030PT, SBL4040PT www.vishay.com Vishay General Semiconductor Revision: 27-May-2020 3 Document Number: 88733 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.1 1 10 100 100 1000 10 000 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 0.1 1 10 100 0.1 100 t - Pulse Duration (s) Transient Thermal Impedance (°C/W) PIN 1 PIN 3 CASE PIN 2 TO-3P (TO-247AD) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) REF. 0.203 (5.16) 0.193 (4.90) 10° TYP. Both Sides 30° 10 1° REF. Both Sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7)

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