S9018LT1 ETC
Document overview
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Technical content
1.9 0.95 0.95 2.9 0.4 1. 3 2. 4 1.0 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR (NPN)
FEATURES
P CM: 0 . 2 W ( T a m b = 2 5℃) Collector current I CM: 0 . 0 5 A Collector-base voltage V (BR)CBO: 2 5 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, I B=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO V CB=20V, IE=0 0.1 µA Collector cut-off current ICEO V CE=15V, IB=0 0.1 µA Emitter cut-off current IEBO V EB= 3V, IC=0 0.1 µA DC current gain hFE(1) V CE=5V, IC= 1mA 70 190 Collector-emitter saturation voltage VCE(sat) I C=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) I C=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz
600 MHz
DEVICE MARKING S9018LT1= J8 U n i t : m m SOT-23 1. BASE 2. EMITTER 3. COLLECTOR