S9014 LEIDITECH
Document overview
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Technical content
TRANSISTOR (NPN)
FEATURES
z Complementary to S9015 MARKING: J6 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.1 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =50 V , I E =0 0.1 μ A Collector cut-off current I CEO V CE =35V , I B =0 0.1 μ A Emitter cut-off current I EBO V EB = 3V , I C =0 0.1 μ A DC current gain h FE V CE =5V, I C = 1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =100 mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100 mA, I B = 5mA 1 V Transition frequency f T V CE =5V, I C = 10mA 30MHz
150 MHz
T -23 1. BASE 2. EMITTER 3. COLLECTOR S9014 Rev : www.leiditech.com 01.06.2015 1/3
Rev : www.leiditech.com 01.06.2015 2/3
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Millimeters Inches Symbol Min. Nom. Max. Min. Nom. Max. 0.01 0.06 0.10 0.001 0.002 0.004 c 0.09 0.13 0.18 0.003 0.005 0.007 E 1.20 1.30 1.40 0.047 0.051 0.055 L 0.35 0.54 0.69 0.014 0.021 0.029 Symbol Millimeters Inches X 0.80 0.031 0.95 0.037 Y 0.90 0.035 Z 2.00 0.079 Soldering Footprint S9014 Rev : www.leiditech.com 01.06.2015 3/3