S9013LT1 ETC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
. =~ oo SOT-23 Plastic-Encapsulate Transistors — {BASE $9013LT1 TRANSISTOR (NPN) 3.COLLECTOR Se... oO -| 2 / TNS Power dissipation Pcem: 0.3W (Tamb=25°C ) «2:4. yg Collector current | ne | Icm: 0.5A ca | Collector-base voltage | iT ior it V(BR)CBO:40V a 2 o TH ae ‘¢ Operating and storage junction temperature range NN) ~= \\ al [o) °, ° | io | TJ, Tstg :-55°C to+150°C | a | UNIT: mm
ELECTRICAL CHARACTERISTICS
: (Tamp=25'C_ unless otherwise specified) Collector-base breakdown voltage Ic=100LA, lE=0 pao} | fv | Collector-emitter breakdown voltage Ic=0.1mA, IB=0 pas] fof Emitter-base breakdown voltage lE=1001n A, Ic=0 Ps | | fv | VcB=40V, le=0 ee es ve Sica ak la Vce=20V.l8=0 ee ee ev Vor=tv,cssoma | 120) | 350) | a ccimaiwsonn || oe | +4: : VcE=6V,Ic=20mMA CLASSIFICATION OF hreE(1) Pe a ee DEVICE MARKING : S9013LT1=J3
Typical Characteristics $9013LT1 20 —— - TT ava _ ee 160uA oe ie= 140UA eed a 5 ees 5 16 + st I8=120UA =H Hote ST o —_ 2 ee Sool eee ae eee ee 4 4. Is=40uA | fa) 10 55 oe eas Ses Ba a < — CS ase aeictied mee cree eee se ee meee s , — ls=20uA | £ SSE a Ee ES ee eee eee 0 10 20 30 40 50 1 Pip LTE 1 ‘ 1 10 100 1000 10000 Vce(V), COLLECTOR-EMITTER VOLTAGE IC(mA) ,COLLECTOR CURRENT Static Characteristic DC current Gain Lu faa) << 10000 === = S 1000 = S==ss SS Sas eee
5 Saormsettt aeeeemnsis a aadives 3 SS SESE Vee = 6V
5 a EE | A = mT rh iH a Ver (sat) So ao nt He : UU I an i E44 H PF > 1 10 400 1000 10000 ae 4 10 100 1000 10000 ic(mA), COLLECTOR CURRENT Ic(mA), COLLECTOR CURRENT Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector-Emitter Saturation Voltage