S9012LT1 ETC
Document overview
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Technical content
SOT-23 Plastic-Encapsulate Transistors ~~ © Se 1.BASE 2.EMITTER $9012LT1 TRANSISTOR (PNP) 3.COLLECTOR ee, | xT : ey FEATURES ! | ° —-* Power dissipation Poem: 0.3W (Tamb=25°C ) <——| Collector current eee |. Iom: -0.5A | | a || Collector-base voltage _ | bof HE | | V(BR)CBO : -40V" , na) | | . xe + _ | : E43 ‘Operating and storage junction temperature range N= $ UI im (ap) | 3 | | Tu,Tstg : -55°C to+150°C | UNIT: mm
ELECTRICAL CHARACTERISTICS
(Tamp=25°C unless otherwise specified) Collector-emitter breakdown voltage Ic=-0.1mA, IB=0 ps} | fv | Emitter-base breakdown voltage le=-1001n A, Ic=0 Ps} | fv | VcB=-40V,lE=0 24} 2A Collector cube current Vce=-20V, Is=0 re ee ee pe euerennsae Voe=-1V,1c=-500mA_| 40 | | | Collector-emitter saturation voltage Ic=-500mA,|B=-50mA | | foe} y | So ssomnsom | [aay CLASSIFICATION OF hreE(1) DEVICE MARKING: S9012LT1=2T1
Typical Characteristics $9012LT1
60 B30 | oe
Hee § Eee q o || | __le=-50ua 2 et jar 0 -10 -20 -30 -40 -50 -10 -100 -1000 Vce (V), COLLECTOR-EMITTER VOLTAGE - I¢(mA),COLLECTOR CURRENT Static Characteristic DC current Gain (5 -1000 ' S ye =] S ee a ed AT a ALOR | a A o re teferfn = Ls =) Sn Se Ese < Fi ee oe z Ba a | >. } | i | || j i i Ic=10ls c 7 Small aati | Hot herr 500 5000 x 1 10 700 1000 10000 > ic (mA), COLLECTOR CURRENT = Ic(mA), COLLECTOR CURRENT ie ____ Bace-Emitter Saturation Voltage Current Gain Bandwidth Product Collector-Emitter Saturation Voltage