S9012 ETC
Document overview
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Technical content
TO-92 Plastic-Encapsulate Transistors SS |
FEATURES
| _ Power dissipation ' TO-92 Pcm: 0.625W (Tamb=25C) [| | 1 . EM ITTER Collector SS Se lem: -O.5A _Collector-base voltage 3.COLLECTOR Vierycso: -40 V . | _ Operating and storage junction temperature range
123 Ty, Tstg: -55C to + 150C
ELECTRICAL CHARACTERISTICS : (Tamb=25C unless otherwise specified) o pau ee ee nn ee Parameter =| Symbol | Test conditions =| MIN’ | MAX | UNIT Collector-base breakdown voltage Ic= -100 » A, le=0 p40 | fv | Collector-emitter breakdown voltage Ic= -0.1 mA, In=0 pa | fv Emitter-base breakdown voltage le= -100 un A, Ic=0 es ftv DC current gain Collector-emitter saturation voltage Ic= -500 mA, Is= -50 mA pf oe fv Base-emitter saturation voltage Ic= -500 mA, Is= -50 mA Ff az fv Vce= -6 V, Ic= -20 mA Transition frequency fr MHz f =30MHz CLASSIFICATION OF Here) a ee ee ee 64-91 78-112 96-135 112-166 144-202 190-300
Typical Characteristics $9012 -50 i 1000 . . lp=-250UA - 40 aa — | ° = — Ww 5 fo) ©O -30 L —_| sslounenerenen a K Ee w 400 eo: ——>* oO me ao W 29 ecereks | ui fen 00u4 2 -10 — — £ 0 10 0 -10 -20 -30 -40 -50 -10 -100 -1000 Vce[V], COLLECTOR-EMITTER VOLTAGE Io[mA], COLLECTOR CURRENT Static Characteristic DC current Gain yy 71000 © 1000 wo 3 Vee=-6V <¢ Vee sat 5 I a oO a © Zz F 5 [a 5 Z “F100 a a s Vce sat z = i? = Oo 10 7 = oc a 5 w lc=10lg Oo : 7) wr S -10 x= oo > -10 -100 -1000 = -1 -10 -100 -1000 -10000 Ic[mA], COLLECTOR CURRENT Ic[mA], COLLECTOR CURRENT Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector-Emitter Saturation Voltage