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- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability DO-5 Package
- Types up to 1600 V VRRM Parameter Symbol S85B (R) S85D (R) Unit Repetitive peak reverse voltage VRRM 100 200 V S85B thru S85JR S85J (R) 400 S85G (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Silicon Standard Recovery Diode Conditions 600 pp g RMS reverse voltage VRMS 70 140 V DC blocking voltage VDC 100 200 V Continuous forward current IF 85 85 A Operating temperature Tj -65 to 180 -65 to 180 °C Storage temperature Tstg -65 to 180 -65 to 180 °C Parameter Symbol S85B (R) S85D (R) Unit Diode forward voltage 1.1 1.1 10 10 μA 15 15 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.65 0.65 °C/W A1800 Reverse current IR VF 1800 VR = 100 V, Tj = 25 °C IF = 85 A, Tj = 25 °C TC ≤ 140 °C Conditions 280 1800 1800 -65 to 180 85 85 -65 to 180 S85J (R) 10 10 S85G (R) 0.65 VR = 100 V, Tj = 180 °C 0.65 1.1 1.1 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified -65 to 180 -65 to 180 TC = 25 °C, tp = 8.3 ms 420 600400 Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com 1
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