S8550 GWSEMI
Document overview
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Technical content
FEATURES
Collector current: I C =0.5A MARKING : 2TY MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage V I C Collector Current -Continuous -0.5 A P C Collector Power Dissipation 0.3 W T j Junction Temperature 150 T stg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = -100 µA , I E -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100 µA , I C V Collector cut-off current I CBO V CB = -40V, I E -0.1 µA Collector cut-off current I CEO V CE = -20V, I B -0.1 µA Emitter cut-off current I EBO V EB = -3V, I C -0.1 µA h FE(1) V CE = -1V, I C = -50mA 200 350 DC current gain h FE(2) V CE = -1V, I C = -500mA Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE = -6V, I C = -20mA 30MHz 150 MHz 1．BASE SOT-23 2．EMITTER 3．COLLECTOR S8550 TRANSISTOR(PNP)
TRANSISTOR(PNP)
Plastic surface mounted package; 3 leads SOT-23 S8550 TRANSISTOR(PNP)