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S8550
FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current
-
ICM : 0.5 A Collector-base voltage
-
V(BR)CBO : 40 V
ELECTRICAL CHARACTERISTICS（
（Tamb=25℃
（ （
℃ ℃
TRANSISTOR (PNP)
TO-92
- EMITTER 2. BASE 3. COLLECTOR
1 2 3
℃ unless otherwise specified）
） ） ）
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR) CBO | Ic= -100μA , I =0 E | - 40 | V | ||
| Collector-emitter breakdown voltage | V(BR) CEO | Ic=- 0.1 mA， I =0 B | -25 | V | ||
| Emitter-base breakdown voltage | V(BR) EBO | I = -100μA， I =0 E C | - 5 | V | ||
| Collector cut-off current | I CBO | V = -40 V , I =0 CB E | - 0.1 | μA | ||
| Collector cut-off current | I CEO | V =- 20 V , I =0 CE B | - 0.2 | μA | ||
| Emitter cut-off current | I EBO | - V = 3 V， I =0 EB C | - 0.1 | μA | ||
| DC current gain(note) | H FE（1） | V = -1 V, I = 50mA CE C | 85 | 300 | ||
| H FE（2） | V = -1 V, I = 500mA CE C | 50 | ||||
| Collector-emitter saturation voltage | V (sat) CE | I =- 500mA, I = 50 mA C B | - 0.6 | V | ||
| Base-emitter saturation voltage | V (sat) BE | I =- 500mA, I = 50 mA C B | - 1.2 | V | ||
| Base-emitter voltage | V BE | I = -100mA E | - 1.4 | V | ||
| Transition frequency | f T | V =- 6 V, I =- 20mA CE C f = 30MHz | 150 | MHz |
CLASSIFICATION OF HFE(1)
| Column 1 | Column 2 | Column 3 | Column 4 |
|---|---|---|---|
| Rank | B | C | D |
| Range | 85-160 | 120-200 | 160-300 |
Tel:(852)2341 9276 Fax:(852)2797 8153
Wing Shing Computer Components Co., (H.K.)Ltd.
E-mail: wsccltd@hkstar.com
Homepage: http://www.wingshing.com