S8025R ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark iscThyristors S8025R DESCRIPTION
- Electrically-isolatedpackage
- HighVdrmand Vrrm.
- Hightemperaturestability.
APPLICATIONS
- Itissuitable tofitallmodes ofcontrol applications. suchas Solid StateRelays,Heating controller,Phased circuits,motorcontrolcircuits inelectric toolsandcleaner. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peakoff-state voltage 800 V VRRM Repetitive peakreverse voltage 800 V IT(AV) Average on-stage current TC=80℃ 25 A IT(RMS) RMS on-statecurrent TC=105℃ 250 A PG(AV) Average gatepower dissipation Tj=125℃ 1 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VRM=VRRM,, Tj=25℃ 5 μA Tj=125℃ 1 mA IDRM Repetitive peakoff-state current VDM=VDRM, Tj=25℃ 5 μA Tj=125℃ 1 mA VTM On-state voltage ITM=75A 1.4 V IGT Gate-triggercurrent VD=12V;RL=100Ω 30 mA VGT Gate-triggervoltage VD=12V;RL=100Ω 1.5 V IH Holdingcurrent IT=0.5A;GateOpen 60 mA Rth(j-c) Thermalresistance Junctionto case 2.05 ℃/W