S8008R ISC
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors S8008R
DESCRIPTION
- WithTO-220 Non-isolatedpackaging
- Glasspassivated junctionsandcentergatefireforgreater parameter uniformity and stability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitivepeak off-state voltage 800 V VRRM Repetitivepeak reversevoltage 800 V IT(RMS) RMSon-state current 8 A ITSM Surgenon-repetitive on-statecurrent 50Hz 60Hz 100 A PG(AV) Averagegate powerdissipation 0.5 W Tj Operatingjunction temperature -40~125 ℃ Tstg Storagetemperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitivepeak reversecurrent VRM=VRRM VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ 0.01 0.2 0.5 mAIDRM Repetitivepeak off-state current VTM On-state voltage ITM=8A 1.6 V IGT Gate-triggercurrent VD =12 V;RL=33Ω 1 15 mA VGT Gate-triggervoltage VD =12 V;RL=33Ω 1.5 V IH Holdingcurrent IGT=0.2A 30 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damage.