S7412M

2N3654 ETC

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G E SOLID STATE OL DEff 3875081 0017478 O | : 3875081 G & SOLID STATE . O1e 17678 «2D T*287/7 Silicon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M File Number 724 . TERMINAL DESIGNATIONS 35-A Silicon Controlled Rectifiers 6 an caTHooe L For Inverter Applications f f “GATE Ht Features: | © Fast turn-off time — 10 ys max. ML ® High difdt and dviat capability al © Low thermal resistance . CT TT) RCA-2N3654 to 2N3658, inclusive, and the S7412M* are ANODE all-diftused silicon controlled rectifiers (reverse-blocking — triode thyristors) intended for high-speed switching appli- | cations such as power inverters, switching regulators, and ——— high-current pulse applications, They feature fast turn-off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25 kHz. JEDEC TO-208AA & The 2N3654 to 2N3658 have forward and reverse off-state 3 voltage ratings of 50, 100, 200, 300, and 400 volts, respec- . tively. Type S7412M has a forward and reverse off-state voltage rating of 600 volts, ‘These SCR’s employ a hermetic JEDEC TO-208AA package. “Formerly RCA Type No, S7432M. ag MAXIMUM RATINGS, Absolute-Maximum Values: (2N3654 ‘2N3655, 2N3656 2N3657 ‘2N3658 ‘$7412M “VasOMt cece ceeetseeeneeneeneeeeene 15 150 300 400 500 700 Vv Vanout ssc 80 100 200 300 400 600 0 V Vonouf sivsoiuiueuieei 80 100 200 300 400 600 2 V Tiras (Te = 40°C, 8 = 180°)... «9g Fe “Irs: For one full cycle of applied principal voltage 60-H: (Rectan- gular wave-pw = 5 ms, = 50 18), Teo= AOC ves ecsesecetereneeserees gg . *di/dt: Vo = Venom, lar = 200 mA, t= 0.1 ys a Fie © 120°C, t= 1toB.3ms.,.. ggg tg “Pow: Peak (forward or reverse) for 10us “. maximum, See Fig. 7) — 40 Averaging time = 10 ms maximum... ly Tat coecsesseseceeesgeeess tees sts gee 8 101. >. Tee 68 0 120 °c During soldering for 108 maximam re oe ice 80 iegtern * tnaccordance with JEDEC registration data format (JS-14, RDF-1) flled for the JEDEC (2N series) types. + These valves do not apply if there is a positive gate signal. Gate must be open or negatively biased. = Any product of gate current and gate voltage which results in a gate power less than the maximum Is permitted. + For temperature measurement reference point, see Dimensional Outline. epg

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Silicon Controlled Rectitiors ‘ 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M

ELECTRICAL CHARACTERISTICS

‘At Maximum Ratings Unless Othorwise Specified and at indicated Case Temperature (Tc) FOR ALL TYPES. . CHARACTERISTIC Except as Specified [man | TWP. [MAX ‘pom oF !Rom! ° Vp = Vorom oF Va = Varom: Te = 120°C 2N3654, 2N3655, 2N3656, S7412M ....- eee eee INGEST eee eeeeceeeeeceneeeeeeeeeueeeeeuns QNBOSB eee eee eens ee eeeee eee eee ette ees vt! ip = 25 A (peak), To = 28°C oe. eee e eee eee eee v ino! TE HQC eee ce cece cena centre ee eeeneeee 75 TQM OBC eee cece cece eect ee eee eee ees 150 +) dv/dt: Vp = VoRoM: exponential voltage rise, Te = 120°C. (Soo Fig. 16)... 0 esse eseeveeeeeuecsteeesenes Vins lor: 5 Vp = 6 V (de), Ry = 42, To = 28°C... eee eee 80 180 Vp = 6V (de), Ry = 29, TE= 68°C oes ee eeees 150 | 500* Vor? ° Vp = 6V (de), Ry #49, TE =2B°C oes ee reece *] Vp = 6 V (dc), Ry = 2002, Te = 120°C... cesses v Vp = 6 V (de), Ry = 28, Te = 68°C vee e eee ee ene *V ta: Rectangular Pulse Vox = Vorom: it = 10 A, pulse duration = 60 ps, dv/dt = 200 V/us, —di/dt = 5 Alus, It = 200 mA at turn-on, Vax = 15 V minimum, Vgx = 0 Vat Sinusoidal Pulse Vox = VpROM: it = 100 A, pulse duration = 2 us, du/dt = 200 Vius, Vax = 30 V minimum, Vex = 0 Rog wee-o vee | = [oes [tre] Pon] * In accordance with JEDEC registration data format (48-14, ROF-1) filed for the JEDEC (2N series) types. _ tits: : 1222 13

G E SOLID STATE OL Def) 3875081 OO17b80 8 it 3875081 GE SOLID STATE o1€ 17680. 0 7-25-17 Sllicon Controlled Rectifiers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M . a EHEESERESSHRRE Eee peg! cd qeatitaasoitteas “ “ 3 ofeena EEE HEH Fig. 1 — Principal voltage-current characteristic. . Cemertecte cater don ou . Fig. 2 — Power dissipation vs, peek on-state current, TE Re IEEyamerana Hoty coneaeasteeastecaneat giiuey euntteetaarn arta Eiasstussstsssniesa3i stistisnesissateesststisg! 3505/77 750 2 cctPcaSONNESEEescREaSEatSEat SEE] Fig. ~ Moximum allowable cose-tempaatore vi past onstate current Fig 4 ~ Power dsiption vs. paok on-state currant HUE ARERR a it Geet ce Eee eat teeta HEE ARSC SEE SU EEE EEG ate aE REE erent nn irl EU TRE eee atest aeenaeeeeeeeEeEE Fig, 5 ~ Maximum allowable cos tomperatore _— “ fest costal oer Fi. 6 — Veriation of on-state with onstate vote. 686 eS 1223 c-14

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3875081 GE SOLID STATE Silicon Controlled Rectifiers

2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M Ae sau = etre ESE TE EE Dstssigjetssessarsteessasnasasaatasess=o=c-| T nactiacomtt a secant Ss Fig. 7 — Typical variation of peak reverse-recovery Fig. 8 — Typical variation of peak reverse- current with posk oneaate current retovery current wif on-tat (hait-sine-wave pulse). current (rectangular pulse). i ase titaeeyescet tates ieee ) ee i Fig. 9 — Typical variation of peak reverse-recovery Fig. 10 — Typical variation of turn-off time with current with rate-of-descent of on-state junction temperature (rectangular | Gurren (rectengutar pulse) pulse) . 2 a oe ee macetiaeetettiat yay Scermcr sobre onsite Nee Veay Fig. 11 — Typical variation of turn-off time with Fig. 12 — Typical variation of turn-off time with peak on-state current (hall-sine-wave rate-of-rise of reapplied off-state pulse). voltage (rectangular pulse). : TT | 1224 © _0-Ol

G E SOLID STATE 0 eff zs7soa, coieae 1 "3875081 G E SOLID STATE O1— 17682 D ) 7-25-17 Silicon Controlled Rectifiers ave CE 17682 D1 THE 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M : , —— 2 : BY | ‘ ‘0 a | f 4 an 63% OF Yo /” cavvieat. aust ot fe ome we ate oe sm oomh . seesuns Fig. 13 — Rato-o-change of on-state current with Fig. 14 —Rate-of 90 of of-tato voltage with time fimo tng ave Fasiing cuits romwano comers onc PAEREPEN WT ite SiR : ow Hw HS ® - s sr stra weoeunt . A orem cet + Preble peor ~Oaan ala onear ald . Fig. 16 — Cireult used to measure turn-off time (ta), rectangular pulse. : ang : wate | woe som caat ent | an . aoc y | vax. o—s L bg uct a 4D ‘vot i i we -t_\\ i a “9 : f \\ f hs Twat eae tou t -—— 4 at sane Soctaa waa wore vou Fig. 16 — Relationship between off-state voltage, Fig. 17 — Circuit used to measure turn-off time reverse voltage, on-state current, and (te), haif-sine-wave pulse. . ‘averse current showing releranco points defining turn-off time (t.), ' Frotangule ple, 1 eee — ‘1225 D-02

GE SOLID STATE o1 deff ae7soan corsa 3 1 —.. oe ' 3875081 G E SOLID STATE o1e 17683. 0 T-2Z5S-/7 Silicon Controlled Rectiflers 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M g--S4----- fo eee i ex Eee ae i : eee em : Fig. 18 —Rolationship botween off-state voltage, H reveree voltage, on-state oun and Fig. 19 — Heat sink quidence. . points for specification of turn-off fi hal-sine-wave pulse 1 . i Ena | - 1226 D-03