S70M ETC2
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- High Surge Capability DO-5 Package
- Types up to 1600 V VRRM Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage VRRM V RMS reverse voltage VRMS V DC blocking voltage VDC V Silicon Standard Recovery Diode Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 800 1200 840 12001000800 Conditions S70K (R) S70M (R) S70Q (R) 1000 700560 S70K thru S70QR 2. Reverse polarity (R): Stud is anode. DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W0.65 70 70 70 1250 1250 1250 1200 1.1 1.1 -65 to 180 1000800 S70Q (R) 1.1 10 10 -65 to 180 -65 to 180 -65 to 180 -65 to 180 -65 to 180 S70K (R) S70M (R) 0.65 0.65 VR = 100 V, Tj = 180 °C 99 V TC = 25 °C, tp = 8.3 ms TC ≤ 140 °C Conditions VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C Reverse current IR VF Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A www.genesicsemi.com/index.php/silicon-products/standard-rec 1
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