S6510MG ETC2
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ROITHNER LASERTECHNIKROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S6510MG TECHNICAL DATA Visible Wavelength Laserdiode Structure: InGaAlP, index guided single transverse mode Lasing wavelength: 655nm typ. Output power: 10 mW, CW Package: 5.6 mm MG, TO-18 PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Optical Output Power Po 10 mW LD Reverse Voltage VR(LD) 2 V PD Reverse Voltage VR(PD) 30 V Operation Case Temperature TC -10 .. +60 °C Storage Temperature TSTG -40 .. +85 °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT Threshold Current Ith 15 20 mA Operation Current Iop Po =10mW 26 40 mA Operating Voltage Vop Po =10mW 2.2 2.6 V Lasing Wavelength l p Po =10mW 650 655 660 nm Beam Divergence θ// Po =10mW 5 7 9 ° Beam Divergence θ⊥ Po =10mW 30 32 38 ° Slope Efficiency η 0.5 0.7 1 mW/mA Monitor Current Im Po =10mW 50 200 500 µA