S3700 ETC1

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G E SOLID STATE OL Depp 3875081 o017728 O [ | 3875081 G E SOLID STATE O1E 17728 «0D T2575 | Silicon Controlled Rectifiers ———__ nN $3700 Series File Number 306 5-A Silicon Controlled Rectifiers TERMINAL DESIGNATIONS For Inverter Applications argent wruawaen i Features: 3) = 600V, 125°C T, operating ® High dv/dt and di/dt capability i) = Low switching losses = High pulse-current capability are Sacre = Low forward and reverse leakage sorrouview = SIPOS oxide glass multilayer passivation system = Advanced unisurface construction SEDEC TO-213AA = Precise ion-implanted diffusion source The RCA-S3700-series types are all-diffused, silicon con- _ fluorescent lighting. These types may be used at frequen- trolled rectifiers (reverse-blocking triode thyristors) de- cles up to 25 KHz. signed for inverter applications such as ultrasonics, The $3700 series employ a hermetic JEDEC TO-213AA choppers, regulated power supplies; inductionheaters,and package. Non-repetitive peak reverse voltage:# ‘Non-repetitive peak off-state voltage:® Repetitive peak reverse voltage: Repetitive peak off-state voltage:m On-state current: Te =65° Cj conduction angle = 180°; For other conditions ———— eer rigs. 84 Peak surge (non-repetitive) on-state current: tram For one full cycle of applied principal voltage, Te = 85°C

50 Hz (sinusoidal) 65 A

Rate of change of on-state current Vo = Voom, lor = 50 MA, te =O.1 3 ..sseceeeeeeceeeerreesers GUA 200 8 Fusing current (for SCR protection): Gate power dissipation:+ Temperature Range:+ SUOPAGE oo. cececneeecceeeececeteccseeeseseseeteeneceseeees Tate —_____— -0 to 150 _____—._ °c Pin Temperature (During soldering): At distances = 1/32 in. (0.8 mm) from seating plane FOr 108 MAK... eee eeceeceecseceecseceeeeeeceeceeseescneeees TR —_— 085 '&§ These values do not apply if there Is a positive gate signal. Gate must be open or negatively biased. » Any product of gate current and gate voltage which results in 8 gate power less then the maximum Is permitted. +t For temperature measurement reference point, see Dimensional ‘Outline. ! 734 | 1272 6-06 -

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Silicon Controlled Rectifiers $3700 Series

ELECTRICAL CHARACTERISTICS

At Maximum Ratings Unies Otherwise Specified and at Indicated Case Temperature (Tc) [timits | SYMBOL FOR ALL TYPES Except as Specified . Peak Off-State Current: (Gate open, Te = 125°C) Forward Current (Ipgy) at Vp = Vprom -+----»- | !DboM Reverse Current (Irom) at Va=VaRoM -+-- --- | _'ROM Instantaneous On-State Voltage: i= 30A (peak), To = 25°C... eee eeeeeeee | VT v Instantaneous Holding Current: Gate open, Te = 25°C «2... eee eee e ee ec eee ee ee Critical Rate of Rise of Off-State Voltage : Vp = VoroM: exponential voltage rise, DC Gate Trigger Current: OC Gate Trigger Voltage: Gate Controlled Turn-On Time: (Delay Time + Rise Time) For Vx = VDROM. IGT = 300 mA, ty = 0.1 ys, Ip= 2A (peak), Te = 26°C (See Fig. 10) -.-.---+-- 07 ‘Circuit Commutated Turn-Off Time: Vpx = Vorom: 't = 2 A, pulse duration = 50 us, dv/dt = 100 V/xs, ~di/dt = —10 Alus, Igy = 100 mA, | Vgr = 0V {at turn-off), To = 80°C (See Fig 13) ----| tg H Thermal Resistance: | Feat oeacuree li co TE ss ' femesmoweteoe eek bE) PE (\\ae err! aL PeeE aE Ee Eee Eee tart PeREGRE OS 07s Ea sheets Pe EEEPAR GEESE ape CE

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PUY Las ETS [be eaee set et feat eames 24 Pet] Baie pean Era | ro C4 fe teba to [Speier ertts is ES SEE CGE Ess PPLE EET Vig OMSCOETATECAMENO A peiieinena re Fig. 1~Power dissipation vs. average Fig, 2—Dissipation vs repotition rate. on-state current. | ——— 8 | _ 1272 G-07

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