S2AA HDSEMI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier From A To MX Marking Polarity: Color band denotes cathode Glass passivated chip ● S2X H igh Diode Semiconductor SMAK Notes: pad areas S2A THRU S2M Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T L =100℃ 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 50 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =2.0A 1.15 Peak Reverse Current I RRM1 μA V RM RRM Ta =25℃ 5 I RRM2 Ta =100℃ 50 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 53 R θJ-L Between junction and terminal 16 A B D G J K M A B D G J K M 100 V RMS V 35 70 140 280 420 560 700 Maximum RMS Voltage
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) 60Hz Resistive or Inductive Load (7.0mm×7.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT TL=100 8.3ms Single Half Sine Wave 11 0 1 0 0 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.1 1.0 0.5 VF(V)
H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA