S2600B ETC
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3875081 GE SOLID STATE O1E 17718 DAS -43
Silicon Controlled Rectifiers $2600B, S2600D, S2600M, S2600N . File Number 1693 High Voltage, Medium Current Silicon Controlled Rectifiers TERMINAL DESIGNATIONS : For Power Switching, Power Control and Ignition Applications . Features: = B00V, 126 Deg. C Ts Operating care = High dv/at and di/dt Capability = Low Switching Losses = High Pulse Current Capability cameos. NODE = Low Forward and Reverse Leakage = Sipos Oxide Glass Multilayer Passivation System = Advanced Unisurface Construction ‘secgearres «= Precise ton Implanted Diffusion Source Low-Profile TO-205 “The $2600 series are high voltage, medium current silicon These Thyristors feature an advanced unisurface construc- controlled rectifiers designed for switching AC and DC _ tion with a multilayer glass passivation system for improved currents. The types within the series differ in their voltage reliability performance at high junction operating tempera- fatings: the vollage ratings are identified by suffix letters in tures. Their dv/dt, di/dt capability and low switching losses the type designations. make them suitable for applications such as lighting, power- All types utilize the low-profile TO-205 package. ‘witching, motor speed control and crowbars. i i i | . MAXIMUM RATINGS, Absolute-Maximum Values: VORM veecsceseeseeresrssssetsessessesssesseseesees 200 400 00 00 IT (RMS) (Te = 65°C) oo cecceeeeeeeeeeeee eae n neni ee ee em A . GUL ce ccsecsceseeneeeseesceecnesaceneeeessesgeegs ¢ — 200 A PGM (for 108 maxX.) <sseseseeseeseesseesceseeneeeenee | ee 1G T Stage .eeeseesescesseseesessteseeeseseceseeseess | ee 65 10 150 ———— °C | me i 1261 F-10
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Silicon Controlled Rectifiers $2600B, S2600D, S2600M, S2600N ELECTRICAL CHARACTERISTICS, at Case Temperature (T,) = 25°C Unless Otherwise Specified (CHARACTERISTIC ‘SYMBOL $2600 FAMILY [ min. | tve. | max. | Repetitive Peak Forward and Reverse Blocking Current : Rated VDRM and VRRM, Gate Open IDROM BA at TC = 125°C 1RROM. mA ITM = 304A, v™ v Gate Trigger Current (dc) VD = 12 Vde \\cT RL = 30 Ohms Gate Trigger Voltage (de) VD = 12 Vde, RL = 30 Ohms. vet 1 VD = VDRM, RL = 500 Ohms, TC = 125°C = VD = 12 Vde, IT (initial) = 200mA_ Critical Rate of Rise of Off-State Voltage (Exponential Waveform) TC = 125°C, Gate Open, VD = VORM dv/dt - Wus 7 $2600B, S2600D . 160 : ‘$2600M 125 S2600N 75 Turn-On Time IT = 2A, VD = VORM 1G = 80mA Turn-Off Time VD = VDRM, TC = 75°C, dv/dt = 20V/uS- 65 us IT = 2A for 50S, di/dt = 10A/uS- IG = 80mA at Turn-On Thermal Resistance Junction to Case RAIC 7 °C/W i Junction to Ambient RAJA 150 N PPR TT H ‘ ~~ i g tN Bes PtP eee PE ANE pe a a i, i _| a a
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Fig. 1 - Typical Gate Trigger Current Vs. Temperature Fig. 2 - Typical Gate Trigger Voltage Vs. Temperature Fee eR j 126200 «F-11
i 875081 G E SOLID STATE ~ ote 17720 pb F2S-13S Silicon Controlled Reetifiers = $2600B, S2600D, S2600M, S2600N , ae os LE ETA tA es TTT TTT T/T : PENTEL CCCeoeoey . i a eT ELTA TT Py | ~<a S227 eeee iF Cd CAREC Fig. 8 Typical Holding Current Vs. Temperature . Fg 4 - Typical On Stato Voltage Vs. Current 110) = eA A NN NS a 4 “NY SY Tawahoncnte word Tuaaiaanbret oo t | Fig. 5 - Maximum Power Dissipation Vs. Average Current Fig. 6 - Maximum Case Temperature Vs. Average Current i : 120) sas th | T_T pa NOTE TT ; ree a a re “CTE TTT ween cao ema Fig. 7 - Peak Surge Current Vs. Duration ' . a