S2305 ROHM

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www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. S2305 N-channel SiC power MOSFET bare die VDSS ID RDS(on) (Typ.) 450mW 1200V 10A*1 lApplication 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive Gate - Source voltage VGSS -6 to 22 V lAbsolute maximum ratings (Ta = 25°C) Symbol Value Unit Drain - Source voltage Tc = 25°CContinuous drain current Pulsed drain current Parameter Junction temperature Tj 175 °C Range of storage temperature Tstg -55 to +175 °C ID,pulse *2 25 A VDSS 1200 V ID *1 10 A lInner circuit

  • Induction heating
  • Motor drives
  • Solar inverters
  • DC/DC converters
  • Switch mode power supplies lFeatures (G) Gate (D) Drain (S) Source *1 Body Diode (G) (S) (D) 1/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. - V Zero gate voltage drain current IDSS VDS = 1200V, VGS = 0V mATj = 25°C - 1 10 Tj = 150°C - 2 Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA -100 nA Gate threshold voltage VGS (th) VDS = VGS, ID = 0.9mA 1.6 - 4.0 V Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - - WGate input resistance RG f = 1MHz, open drain - 25 mWTj = 25°C - 450 556 Tj = 125°C - 610 - Static drain - source on - state resistance RDS(on) VGS = 18V, ID = 3A 2/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 *1 For Tj=175°C and thermal dissiparion to ambience of 85W or more. Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 Pulsed lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. S Input capacitance Ciss VGS = 0V - 463 - pFOutput capacitance Coss Transconductance gfs *3 VDS = 10V, ID = 3A - 1.0 - VDS = 800V - 21 - Reverse transfer capacitance Crss f = 1MHz - 4 - pF Turn - on delay time td(on) *3 VDD = 400V, VGS = 18V - 19 - ns Rise time tr Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 500V - 31 - Fall time tf *3 RG = 0W - 34 - ID = 3A - 17 - Turn - off delay time td(off) *3 RL = 133W - 38 - mJ Turn - off switching loss Eoff *3 - 17 - Turn - on switching loss Eon *3 VDD = 600V, ID=3A VGS = 18V/0V RG = 0W, L=500mH *Eon includes diode reverse recovery - 47 - - 27 - lGate Charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. V - 9 - Gate plateau voltage V(plateau) VDD = 400V, ID = 3A - 10.5 - nCGate - Source charge Qgs *3 ID = 3A - 7 - Gate - Drain charge Qgd *3 VGS = 18V Total gate charge Qg *3 VDD = 400V 3/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. A Inverse diode direct current, pulsed ISM *2 - - 25 A Inverse diode continuous, forward current IS *1 Tc = 25°C - - 10 V Reverse recovery time trr IF = 3A, VR = 400V di/dt = 110A/ms - 19 - ns Reverse recovery charge Qrr Forward voltage VSD *3 VGS = 0V, IS = 3A - 4.3 - - 13 - nC Peak reverse recovery current Irrm *3 - 1.4 - A 4/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristic curves 0 2 4 6 8 10 Ta=25ºC Pulsed 10V VGS= 8V 12V 14V 16V 18V 20V 0 1 2 3 4 5 Ta=25ºC Pulsed 10V VGS= 8V 12V 14V 16V 18V 20V 0 2 4 6 8 10 Ta=150ºC Pulsed 10V VGS= 8V 12V 14V 16V 18V 20V 0 1 2 3 4 5 Ta=150ºC Pulsed 10V VGS= 8V 12V 14V 16V 18V 20V Fig.1 Typical Output Characteristics(I) Fig.2 Typical Output Characteristics(II) Fig.3 Tj = 150°C Typical Output Characteristics(I) Fig.4 Tj = 150°C Typical Output Characteristics(II) Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Drain Current : ID [A] Drain Current : ID [A] Drain Current : ID [A] Drain - Source Voltage : VDS [V] Drain Current : ID [A] Drain - Source Voltage : VDS [V] 5/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristic curves 0.001 0.01 0.1 0 2 4 6 8 10 12 14 16 18 20 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC VDS= 10V Plused 0 2 4 6 8 10 12 14 16 18 20 VDS= 10V Plused Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 0.1 0.01 0.1 1 10 VDS= 10V Plused Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.5 1.5 2.5 3.5 4.5 -50 0 50 100 150 200 VDS = 10V ID = 1mA Fig.6 Typical Transfer Characteristics (II) Fig.5 Typical Transfer Characteristics (I) Drain Current : ID [A] Drain Current : ID [A] Fig.7 Gate Threshold Voltage vs. Junction Temperature Gate Threshold Voltage : VGS(th) [V] Junction Temperature : Tj [°C] Fig.8 Transconductance vs. Drain Current Transconductance : gfs [S] Drain Current : ID [A] Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] 6/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristic curves 0.2 0.4 0.6 0.8 1.2 1.4 6 8 10 12 14 16 18 20 22 ID = 3A ID = 6A Ta=25ºC Pulsed 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 0 50 100 150 200 ID = 3A ID = 6A VGS= 18V Plused 0.1 0.1 1 10 100 VGS= 18V Plused Ta=150ºC Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC Fig.9 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [W] Gate - Source Voltage : VGS [V] Fig.10 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Junction Temperature : Tj [ºC] Fig.11 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] Drain Current : ID [A] 7/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristic curves 0 200 400 600 800 Ta=25ºC 100 1000 10000 0.1 1 10 100 1000 Coss Crss Ciss Ta=25ºC f = 1MHz VGS = 0V Coss Crss Ciss Ta=25ºC f = 1MHz VGS = 0V 0 5 10 15 20 25 30 Ta = 25ºC VDD= 400V ID= 3A Pulsed 100 1000 10000 0.1 1 10 100 tr tf td(on) td(off) Ta = 25ºC VDD = 400V VGS = 18V RG= 0W Pulsed Fig.12 Typical Capacitance vs. Drain - Source Voltage Capacitance : C [pF] Drain - Source Voltage : VDS [V] Fig.14 Switching Characteristics Switching Time : t [ns] Drain Current : ID [A] Fig.15 Dynamic Input Characteristics Total Gate Charge : Qg [nC] Gate - Source Voltage : VGS [V] Coss Stored Energy : EOSS [mJ] Fig.13 Coss Stored Energy Drain - Source Voltage : VDS [V] 8/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristic curves 100 150 200 250 300 0 2 4 6 8 10 12 Eoff Eon Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500mH 100 0 200 400 600 800 1000 Eoff Eon Ta = 25ºC ID= 3A VGS = 18V/0V RG= 0W L=500mH 100 110 120 0 5 10 15 20 25 30 Eoff Eon Ta = 25ºC VDD= 600V ID= 3A VGS = 18V/0V L=500mH Fig.16 Typical Switching Loss vs. Drain - Source Voltage Switching Energy : E [mJ] Drain - Source Voltage : VDS [V] Fig.18 Typical Switching Loss vs. External Gate Resistance Switching Energy : E [mJ] External Gate Resistance : RG [W] Switching Energy : E [mJ] Fig.17 Typical Switching Loss vs. Drain Current Drain Current : ID [A] 9/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lElectrical characteristic curves 0.01 0.1 0 1 2 3 4 5 6 7 8 VGS=0V Pulsed Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 1000 1 10 Ta=25ºC di / dt = 110A / ms VR = 400V VGS = 0V Pulsed Fig.19 Inverse Diode Forward Current vs. Source - Drain Voltage Inverse Diode Forward Current : IS [A] Source - Drain Voltage : VSD [V] Fig.20 Reverse Recovery Time vs.Inverse Diode Forward Current Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 10/11 2014.05 - Rev.A

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet S2305 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform Vsurge Irr Eon = ID×VDS Eoff = ID×VDS ID VDS Same type device as D.U.T. D.U.T. ID D.U.T. 11/11 2014.05 - Rev.A

R1102Bwww.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/con tact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifica- tions : Althoug h ROHM is continuously working to improve product reliability and quality, semicon- ductors can brea k down and mal function due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures . ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 10) 11) 12) 13) Notes