S2056 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor S 2 0 5 6 D E S C R I P T I O N
- High Breakdown Voltage- : V CBO= 1500V (Min)
- High Switching Speed
APPLICATIONS
- Designed for TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1500 V VCER Collector-Emitter Voltage RBE= 100Ω 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2.5 A ICM Collector Current-peak 3 A IB B Base Current 0.1 A PC Collector Power Dissipation @ T C≤90℃ 10 W TJ Junction Temperature 115 ℃ Tstg Storage Temperature Range -65~115 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor S 2 0 5 6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 5V 2 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 95 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 3 MHz tf Fall Time IC= 2A; IB(end)= 1A 0.75 μs isc Website：www.iscsemi.cn