S2055N ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2055N DESCRIPTION ·
- With TO-3P(H)IS package
- High voltage,high speed
- Low collector saturation voltage
- Built-in damper diode
APPLICATIONS
- Color TV horizontal output applications
- Color TV switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 2.5 ℃/W Fig.1 simplified outline (TO-3P(H)IS) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2055N CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I B=500mA ;VBE=-1.7V;L=40mH 700 V VCEsat-1 Collector-emitter saturation voltage I C=4.5A ;IB=2.0A 1.0 V VCEsat-2 Collector-emitter saturation voltage I C=4.5A ;IB=1.0A 5.0 V VBEsat Base-emitter saturation voltage I C=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current V CB=1500V; VBE=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 300 mA hFE-1 DC current gain I C=1A ; VCE=5V 10 30 hFE-2 DC current gain I C=4.5A ; VCE=5V 4.5 9 COB Collector output capacitance I E=0 ; VCB=10V;f=1MHz 95 pF fT Transition frequency I C=0.1A ; VCE=10V 2 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2055N PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)