S2010L ISC
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors S2010L
DESCRIPTION
- WithTO-220 packaging
- Highheatdissipationand durability
- Thermowattconstruction forlowthermal
- Glasspassivated junctionsandcentergatefireforgreater parameter uniformity and stability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peakoff-state voltage 200 V VRRM Repetitive peakreverse voltage 200 V IT(RMS) RMS on-statecurrent 10 A ITSM Surge non-repetitiveon-state current (1/2cycle,sine wave;Tc=25℃ ) 50HZ 60HZ 100 A PG(AV) Average gatepower dissipation Tp=8.3ms 0.5 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VRM=VRRM VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ 0.01 0.2 0.5 mA IDRM Repetitive peakoff-state current VTM On-state voltage ITM=10A 1.6 V IGT Gate-triggercurrent VD =12 V;RL=60Ω 15 mA VGT Gate-triggervoltage VD =12 V;RL=60Ω 1.5 V Rth(j-c) Thermalresistance Junctionto case 3.0 ℃/W