S2000AF ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION ·
- With TO-3P(H)IS package
- High voltage
- Fast switching
APPLICATIONS
- Horizontal deflection for color TV PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 8 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 2.5 ℃/W Fig.1 simplified outline (TO-3P(H)IS) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage I E=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage I C=4.5A ;IB=2.0A 1.0 V VBEsat Base-emitter saturation voltage I C=4.5A ;IB=2.0A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125℃ 1 2 mA IEBO Emitter cut-off current V EB=5V; IC=0 1 mA hFE DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=0.1A ; VCE=5V;f=5MHz 7 MHz Switching times inductive load ts Storage time 7 μs tf Fall time IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3μH 0.55 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)