RTR020P02 ROHM

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Switching (−20V, −2.0A) RTR020P02 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zApplication Power switching, DC / DC converter. zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) Each lead has same dimensions Abbreviated symbol : TX TSMT3 0.7±0.1 0.85±0.1 2.8±0.2 0.4+0.1 −0.05 1.6+0.2 −0.1 0.16 0.3~0.6 +0.1 −0.06 (2)(1) (3) 0~0.1 2.9±0.1 1.9±0.2 0.95 0.95 1.0MAX. zPackaging specifications Package Code Taping Basic ordering unit (pieces) RTR020P02 TL 3000 Type zAbsolute maximum ratings (Ta=25°C) Parameter VVDSS Symbol −20 VVGSS ±12 AID ±2.0 AIDP ±8.0 AIS −0.8 AISP −3.2 WPD 1.0 °CTch 150 °CTstg −55 to +150 Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Source current (Body diode) zEquivalent circuit (1) Gate (2) Source (3) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) (2) zThermal resistance (Ta=25°C) °C / WRth (ch-A) 125 Parameter Symbol Limits Unit Channel to ambient

zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Yfs Min. Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Body diode characteristics (source-drain characteristics) VSD −− −1.2 VForward voltage Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Min. −− ±10 µAV GS=±12V, VDS=0V VDD −15V Typ. Max. Unit Conditions −20 −− VI D= −1mA, VGS=0V −− −1 µAV DS= −20V, VGS=0V −0.7 −− 2.0 V VDS= −10V, ID= −1mA − 110 150 mΩ mΩ mΩ ID= −2.0A, VGS= −4.0V 1.2 −− SV DS= −10V, ID= −1.0A − 430 − pF VDS= −10V − 80 − pF VGS=0V − pF f=1MHz − ns − ns − ns 4.9 − ns 1.2 − nC 1.3 − nC VGS= −4.5V −− nC ID= −2.0A IS= −0.8A, VGS=0V VDD −15V ID= −1.0A VGS= −4.5V RL=15Ω RGS=10Ω ∗Pulsed

zElectrical characteristic curves GATE-SOURCE VOLTAGE : −VGS (V) 0.001 0.01 0.1 DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics VDS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 10.1 10 DRAIN CURRENT : −ID (A) 100 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Ta=25°C Pulsed VGS= −2.5V VGS= −4.0V VGS= −4.5V VGS= −10V Pulsed Fig.3 Static Drain-Source On-State Resistance vs. Drain Current DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.1 1 10 100 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 100 1000 DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 100 1000 VGS= −2.5V Pulsed DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0 0.5 1.0 1.5 2.0 SOURCE-DRAIN VOLTAGE : −VSD (V) 0.01 0.1 REVERSE DRAIN CURRENT : −IDR (A) VGS=0V Pulsed Fig.6 Reverse Drain Current vs.Source-Drain Voltage Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : −VDS (V) CAPACITANCE : C (pF) 10000 100 1000 Ta=25°C f=1MHz VGS=0V Fig.7 Typical Capacitance vs. Drain-Source Voltage Ciss Coss Crss 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) SWITCHING TIME : t (ns)1000 10000 100 Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed Fig.8 Switching Characteristics td (off) tr tf td (on) 01 2 3 4 5 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : −VGS (V) Fig.9 Dynamic Input Characteristics Ta=25°C VDD= −15V ID= −2.0A RG=10Ω Pulsed

Fig.10 Switching Time Test Circuit VGS RG VDS D.U.T. ID RL VDD Fig.11 Switching Time Waveforms 90% 10% 10% 90% 90% 10%VGS VDS ton toff trtd(on) trtd(off) Fig.12 Gate Charge Test Circuit VGS IG (Const.) RG VDS D.U.T. ID RL VDD Fig.13 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.