RTL030P02

RTL030P02 ROHM

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DC-DC Converter (−20V, −3.0A) RTL030P02 !!!!Features 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) !Applications DC-DC converter !!!!External dimensions (Unit : mm) Each lead has same dimensions TUMT6 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Abbreviated symbol : WN 2.0±0.1 0.85MAX 0.2MAX 0.77±0.05 0.17±0.05 2.1±0.1 1.3±0.11pin mark 0.65 +0.1 −0.050.3 (1) (5) (4)(6) (3)(2) 0~0.1 !!!!Structure Silicon P-channel MOS FET !!!!Packaging specifications Package Code Taping Basic ordering unit (pieces) RTL030P02 TR 3000 Type !!!!Equivalent circuit (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (6) (1) (5) (2) (4) (3)

!!!!Absolute maximum ratings (Ta=25°C) Parameter VVDSS Symbol VVGSS AID AIDP AIS AISP WPD °CTch °CTstg Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Source current (Body diode) −20 150 −55 to +150 ±12 ±12 −0.8 −12 !!!!Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Yfs Min. Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) R DS (on) C iss C oss C rss td (on) tr td (off) tf Q g Q gs Q gd Body diode characteristics (source-drain characteristics) VSD −− − 1.2 V I S= −0.8A, VGS =0VForward voltage Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed −± 10 µAV GS =±12V, VDS =0V VDD −15V −20 −− VI D = −1mA, VGS =0V −− − 1 µAV DS = −20V, VGS =0V −0.7 −− 2.0 V V DS = −10V, ID = −1mA − 50 70 I D = −3.0A, VGS = −4.5V − 55 77 m Ω m Ω m Ω ID = −3.0A, VGS = −4V − 90 125 I D = −1.5A, VGS = −2.5V 2.0 −− SV DS = −10V, ID = −1.5A − 760 − pF V DS = −10V − 125 100 − pF V GS =0V − pF f=1MHz − ns − ns − ns 8.0 − ns 1.5 − nC 2.5 − nC V GS = −4.5V R L 5Ω R GS =10Ω −− nC I D = −3A VDD −15V ID = −1.5A VGS = −4.5V R L=10Ω R GS =10Ω

!!!!Electrical characteristic curves GATE-SOURCE VOLTAGE : −VGS (V) 0.001 0.01 0.1 DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics VDS = −10V Pulsed Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 10 DRAIN CURRENT : −ID (A) 100 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (mΩ ) Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Ta=25°C Pulsed VGS = −4.5V VGS = −4.0V VGS = −2.5V Fig.3 Static Drain-Source On-State Resistance vs. Drain Current DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (mΩ ) 0.1 1 10 100 1000 VGS = −4.5V Pulsed Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 10 100 1000 DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (mΩ ) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS = −4V Pulsed Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 10 100 1000 DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (mΩ ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS = −2.5V Pulsed Ta= −25°C Ta=25°C Ta=75°C Ta=125°C SOURCE-DRAIN VOLTAGE : −VSD (V) 0.01 0.1 REVERSE DRAIN CURRENT : −IS (A) VGS =0V Pulsed Fig.6 Reverse Drain Current vs. Source-Drain Voltage Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 100 1000 10000 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : −VDS (V) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS =0V Fig.7 Typical Capacitance vs. Drain-Source Voltage C iss C oss C rss 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) SWITCHING TIME : t (ns)1000 10000 100 Fig.8 Switching Characteristics td (off) td (on)tr tf Ta=25°C VDD = −15V VGS = −4.5A R G =10Ω Pulsed Ta=25°C VDD = −15V ID = −3A R G =10Ω Pulsed 012345678 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : −VGS (V) Fig.9 Dynamic Input Characteristics

!!!!Measurement circuits Fig.10 Switching Time Measurement Circuit VGS R G VDS D.U.T. ID R L VDD Fig.11 Switching Waveforms 90% 90% 90% 10% 10% 10% 50% 50% Pulse Width VGS VDS ton toff trtd(on) trtd(off) Fig.12 Gate Charge Measurement Circuit VGS IG(Const) R G VDS D.U.T. ID R L VDD Fig.13 Gate Charge Waveforms VG VGS Charge Q g Q gs Q gd

Appendix1-Rev1.0 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.