RSR020P05

RSR020P05TL ROHM

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www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. RSR020P05 Pch -45V -2.0A Power MOSFET lOutline VDSS -45V TSMT3 RDS(on) (Max.) 190mW ID -2.0A PD 1.0W lFeatures lInner circuit 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant lPackaging specifications Type Packaging Taping lApplication Reel size (mm) 180 DC/DC converters Tape width (mm) 8 Basic ordering unit (pcs) 3,000 Drain - Source voltage VDSS -45 V Taping code TL Marking ZH lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Continuous drain current ID *1 2.0 A Pulsed drain current ID,pulse *2 8.0 A Power dissipation Gate - Source voltage VGSS 20 V PD *3 1.0 W PD *4 0.54 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C (1) (2) (3) *1 BODY DIODE *2 ESD PROTECTION DIODE (1) Gate (2) Source (3) Drain 1/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 Mounted on a seramic board (30×30×0.8mm) *4 Mounted on a FR4 (12×20×0.8mm) *5 Pulsed lThermal resistance Parameter Symbol Values Unit Min. Typ. Max. RthJA *4 - - 232 °C/W RthJA *3 - - 125 °C/W Thermal resistance, junction - ambient lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. V Breakdown voltage temperature coefficient ΔV(BR)DSS ΔTj ID= -1mA referenced to 25°C - -43 - mV/°C Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA -45 - - mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 10 mA Zero gate voltage drain current IDSS VDS = -45V, VGS = 0V - - -1 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID= -1mA referenced to 25°C - 3.2 - mV/°C Gate threshold voltage VGS (th) VDS = -10V, ID = -1mA -1.0 - -3.0 Static drain - source on - state resistance RDS(on) VGS= -10V, ID= -2.0A - 130 190 - 200 280 mW VGS= -10V, ID= -2.0A, Tj=125°C W Transconductance gfs *5 VDS= -10V, ID= - 2.0A 1.2 4.0 - S Gate input resistannce RG f = 1MHz, open drain - 21 - 2/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 9.5 - lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Turn - on delay time td(on) *5 VDD ⋍ -25V, VGS = -10V - 8 - lGate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. pFOutput capacitance Coss VDS = -10V - 80 - Reverse transfer capacitance Crss f = 1MHz Input capacitance Ciss VGS = 0V - 500 - - 40 - ns Rise time tr Turn - off delay time td(off) *5 RL = 25W - 35 - Fall time tf *5 RG = 10W - 10 - Unit Min. Typ. Max. - 1.6 - Gate - Drain charge Qgd *5 - 1.2 - nC Gate - Source charge Qgs VDD ⋍ -25V, ID= -2.0A VGS = -10V Total gate charge Qg VDD ⋍ -25V, ID= -2.0A VDD ⋍ -25V, ID= -2.0A VGS = -10V - lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. - -1.2 V AInverse diode continuous, forward current IS *1 Ta = 25°C - - -0.8 Forward voltage VSD *5 VGS = 0V, Is = -2.0A - 3/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lElectrical characteristic curves 0.01 0.1 100 0.1 1 10 100 Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) PW = 100ms PW = 1ms PW = 10ms DC Operation Operation in this area is limited by RDS(on) (VGS = -10V) 100 1000 10000 0.0001 0.01 1 100 Ta=25ºC Single Pulse 100 120 0 50 100 150 200 0.001 0.01 0.1 0.0001 0.01 1 100 Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 bottom Single Ta=25ºC Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : PD/PD max. [%] Drain Current : -ID [A] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation Normalized Transient Thermal Resistance : r(t) Pulse Width : PW [s] Pulse Width : PW [s] Peak Transient Power : P(W) Junction Temperature : Tj [°C] Drain - Source Voltage : -VDS [V] 4/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lElectrical characteristic curves -50 0 50 100 150 VGS = 0V ID = -1mA Pulsed 0.001 0.01 0.1 100 0 1 2 3 4 5 VDS= -10V Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.5 1.5 2.5 3.5 0 0.2 0.4 0.6 0.8 1 VGS= -2.5V VGS= -3.0V Ta=25ºC Pulsed VGS= -10.0V VGS= -4.0V VGS= -4.5V 0 2 4 6 8 10 VGS= -2.5V VGS= -3.0V VGS= -10.0V VGS= -4.0V VGS= -4.5V Ta=25ºC Pulsed Fig.5 Typical Output Characteristics(I) Drain Current : -ID [A] Drain - Source Voltage : -VDS [V] Fig.6 Typical Output Characteristics(II) Drain Current : -ID [A] Drain - Source Voltage : -VDS [V] Fig.7 Breakdown Voltage vs. Junction Temperature Drain - Source Breakdown Voltage : -V(BR)DSS [V] Junction Temperature : Tj [°C] Fig.8 Typical Transfer Characteristics Gate - Source Voltage : -VGS [V] Drain Current : -ID [A] 5/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lElectrical characteristic curves -50 0 50 100 150 VDS = -10V ID = -1mA Pulsed 0.2 0.4 0.6 0.8 1.2 -25 0 25 50 75 100 125 150 0.01 0.1 100 0.01 0.1 1 10 100 VDS= -10V Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 100 150 200 250 300 0 5 10 15 Ta=25ºC ID = -2.0A ID = -1.0A Fig.9 Gate Threshold Voltage vs. Junction Temperature Gate Threshold Voltage : -VGS(th) [V] Junction Temperature : Tj [°C] Fig.10 Transconductance vs. Drain Current Transconductance : gfs [S] Drain Current : -ID [A] Fig.11 Drain CurrentDerating Curve Drain Current Dissipation : ID/ID max. (%) Junction Temperature : Tj [ºC] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [mW] Gate - Source Voltage : -VGS [V] 6/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lElectrical characteristic curves 100 150 200 250 -50 -25 0 25 50 75 100 125 150 VGS = -10V ID = -2.0A Pulsed 100 1000 0.01 0.1 1 10 100 VGS= -10V VGS= -4.5V VGS= -4.0V Ta=25ºC 100 1000 0.01 0.1 1 10 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= -10V 100 1000 0.01 0.1 1 10 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= -4.5V Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Static Drain - Source On-State Resistance : RDS(on) [mW] Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : -ID [A] Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : -ID [A] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : -ID [A] 7/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lElectrical characteristic curves 100 1000 0.01 0.1 1 10 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= -4.0V 100 1000 10000 0.01 0.1 1 10 100 Coss Crss Ciss Ta = 25ºC f = 1MHz VGS = 0V 100 1000 10000 0.01 0.1 1 10 tr tf td(on) td(off) Ta=25ºC VDD= -25V VGS= -10V RG=10W 0 5 10 Ta=25ºC VDD= -25V ID= 2A RG=10W Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : -ID [A] Fig.18 Typical Capacitance vs. Drain - Source Voltage Capacitance : C [pF] Drain - Source Voltage : -VDS [V] Fig.19 Switching Characteristics Switching Time : t [ns] Drain Current : -ID [A] Fig.20 Dynamic Input Characteristics Gate - Source Voltage : -VGS [V] Total Gate Charge : Qg [nC] 8/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lElectrical characteristic curves 0.01 0.1 0.0 0.5 1.0 1.5 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS=0V Fig.21 Source Current vs. Source Drain Voltage Source Current : -IS [A] Source-Drain Voltage : -VSD [V] 9/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 10/11 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSR020P05 lDimensions (Unit : mm) Dimension in mm/inches TSMT3 Patterm of terminal position areas D E E Lp c A A1 A2 S A Q e H e b x S A MIN MAX MIN MAX A - 1.00 - 0.039 A1 0.00 0.10 0 0.004 A2 0.75 0.95 0.03 0.037 b 0.35 0.50 0.014 0.02 c 0.10 0.26 0.004 0.01 D 2.80 3.00 0.11 0.118 E 1.50 1.80 0.059 0.071 e HE 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 Q 0.05 0.25 0.002 0.01 x - 0.20 - 0.008 MIN MAX MIN MAX b2 0.70 - 0.028 l1 - 0.90 - 0.035 0.25 0.01 DIM MILIMETERS INCHES 2.10 0.08 DIM MILIMETERS INCHES 0.95 0.04 11/11 2012.08 - Rev.A

R1120Awww.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when design ing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Produc ts. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. T h e P r o d u c t s a r e n o t d e s i g n e d o r m a n u f a c t u r e d t o b e u s e d w i t h a n y e q u i p m e n t , d e v i c e o r system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.