RSD221N06

RSD221N06 ROHM

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www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. RSD221N06 Nch 60V 22A Power MOSFET Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C Gate - Source voltage VGSS 20 V PD 20 W mJ A EAS *3 IAR *3 17.8 PD 0.85 W Avalanche energy, single pulse Avalanche current Tc = 25°C Ta = 25°C *4Power dissipation Pulsed drain current ID,pulse *2 44 A Tc = 25°C Tc = 100°C Continuous drain current ID *1 A22 ID *1 11 A Drain - Source voltage VDSS 60 V Automotive Solenoid Drive Taping code TL Marking 221N06 lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit 6) 100% Avalanche tested lPackaging specifications Type Packaging Taping lApplication Reel size (mm) 330 Switching Power Supply Tape width (mm) 16 Automotive Motor Drive Basic ordering unit (pcs) 2,500 lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant lOutline VDSS 60V CPT3 (SC-63) <SOT-428> RDS(on) (Max.) 26mW ID 22A PD 20W *1 ESD PROTECTION DIODE *2 BODY DIODE (1) Gate (2) Drain (3) Source (1) (2) (3) (1) (3) (2) 1/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 Thermal resistance, junction - ambient - 21 30 VGS = 4.0V, ID = 22A - 23 33 mW VGS = 10V, ID = 22A Tj = 125°C Forward transfer admittance VDS = 10V, ID = 22A 12 24 - S Static drain - source on - state resistance VGS = 10V, ID = 22A - 18 26 - 32 10 mA Tj = 125°C VGate threshold voltage VGS (th) VDS = 10V, ID = 1mA 1.0 - 3.0 Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - mA Min. Typ. Max. V60 - - - - 265 - 6.25 °C/W - - °C/W147 Values Unit Min. Typ. Max. gfs VDS = 60V, VGS = 0V Tj = 25°C VDS = 60V, VGS = 0V lThermal resistance Parameter Symbol Symbol Conditions VGS = 0V, ID = 1mA Tsold Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s RthJA RthJC VGS = 4.5V, ID = 22A RDS(on) lElectrical characteristics(Ta = 25°C) Parameter Drain - Source breakdown voltage Zero gate voltage drain current V(BR)DSS IDSS - 1 - 100 Values Unit 2/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 L ⋍ 50mH, VDD = 30V, Rg = 10W, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (20mm × 30mm × 0.8mm) *5 Pulsed - V ID = 22A VGS = 10V - 4.5 - Gate - Drain charge Qgd *5 - 3.0 - nCGate - Source charge Qgs Total gate charge Qg *5 VDD ⋍ 30V - lGate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Turn - on delay time td(on) *5 VDD ⋍ 30V, VGS = 10V - 25 - ns Rise time tr *5 ID = 11A - 45 - Turn - off delay time td(off) *5 RL = 12W - 75 - Fall time tf *5 RG = 10W - 65 pFOutput capacitance Coss VDS = 10V - 320 - Reverse transfer capacitance Crss f = 1MHz Input capacitance Ciss VGS = 0V - 1500 - - 140 - lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. mC 44 A Forward voltage VSD *5 VGS = 0V, IS = 22A - - 1.2 V 56 - ns Tc = 25°C Reverse recovery time trr IS *1 - - 16 A Pulsed source current ISM *2 - Continuous source current 30 - IS = 22A di/dt = 100A/msReverse recovery charge Qrr *5 - 100 - lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Gate plateau voltage V(plateau) VDD ⋍ 30V, ID = 22A - 3.3 3/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves 100 120 0 25 50 75 100 125 150 175 0.01 0.1 0.00010.001 0.01 0.1 1 10 100 1000 Ta=25ºC Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 6.25ºC/W top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.1 100 0.1 1 10 100 1000 Ta=25ºC Single Pulse PW = 100us PW = 1ms PW = 10ms Operation in this area is limited by RDS(on) Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : PD/PD max. [%] Drain Current : ID [A] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Normalized Transient Thermal Resistance : r(t) Pulse Width : PW [s] Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V] 4/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves 0.1 100 0.01 0.1 1 10 100 VDD=30V,RG=25W VGF=10V,VGR=0V Starting Tch=25ºC 100 120 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1 Ta=25ºC Pulsed VGS=2.5V VGS=10.0V VGS=4.0V VGS=4.5V VGS=2.8V VGS=3.0V VGS=3.5V 0 2 4 6 8 10 VGS=2.6V VGS=10.0V VGS=4.0V VGS=4.5V VGS=2.8V VGS=3.0V Ta=25ºC Pulsed Fig.6 Typical Output Characteristics(I) Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.7 Typical Output Characteristics(II) Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.4 Avalanche Current vs Inductive Load Avalanche Current : IAS [A] Coil Inductance : L [mH] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] Junction Temperature : Tj [°C] 5/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves -50 0 50 100 150 VGS = 0V ID = 1mA 0.001 0.01 0.1 100 0 1 2 3 4 5 VDS= 10V Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VDS = 10V ID = 1mA 0.01 0.1 100 0.01 0.1 1 10 100 VDS= 10V Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC Fig.10 Gate Threshold Voltage vs. Junction Temperature Gate Threshold Voltage : VGS(th) [V] Junction Temperature : Tj [°C] Fig.11 Transconductance vs. Drain Current Transconductance : gfs [S] Drain Current : ID [A] Fig.8 Breakdown Voltage vs. Junction Temperature Junction Temperature : Tj [°C] Fig.9 Typical Transfer Characteristics Gate - Source Voltage : VGS [V] Drain Current : ID [A] Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] 6/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves 100 0 5 10 15 Ta=25ºC ID = 22A ID = 11A 100 0.01 0.1 1 10 100 Ta=25ºC VGS= 10V VGS= 4.5V VGS= 4.0V 100 -50 0 50 100 150 VGS = 10V ID = 22A Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Static Drain - Source On-State Resistance : RDS(on) [mW] Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : ID [A] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [mW] Gate - Source Voltage : VGS [V] 7/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves 100 120 0 25 50 75 100 125 150 175 100 1000 0.01 0.1 1 10 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= 10V 100 1000 0.01 0.1 1 10 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= 4.5V 100 1000 0.01 0.1 1 10 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= 4.0V Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : ID [A] Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : ID [A] Fig.18 Drain Current Derating Curve Drain Current Dissipation : ID/ID max. (%) Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Static Drain - Source On-State Resistance : RDS(on) [mW] Drain Current : ID [A] Junction Temperature : Tj [ºC] 8/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves 100 1000 10000 0.01 0.1 1 10 100 Coss Crss Ciss Ta = 25ºC f = 1MHz VGS = 0V 100 1000 10000 0.01 0.1 1 10 100 tr tf td(on) td(off) Ta=25ºC VDD= 30V VGS= 10V RG=10W 0 5 10 15 20 25 30 Ta=25ºC VDD= 30V ID= 22A RG=10W 0.01 0.1 100 0.0 0.5 1.0 1.5 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS=0V Fig.19 Typical Capacitance vs. Drain - Source Voltage Capacitance : C [pF] Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics Gate - Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.20 Switching Characteristics Switching Time : t [ns] Drain Current : ID [A] Fig.22 Source Current vs. Source - Drain Voltage Source Current : IS [A] Source-Drain Voltage : VSD [V] 9/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lElectrical characteristic curves 100 1000 0.1 1 10 100 Ta=25ºC di / dt = 100A / ms VGS = 0V Fig23 Reverse Recovery Time vs.Source Current Reverse Recovery Time : trr [ns] Source Current : IS [A] 10/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform 11/12 2012.08 - Rev.A

www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet RSD221N06 lDimensions (Unit : mm) Dimension in mm/inches CPT3 D e b H A1 c Lp x B A L E L2 l2 l1 b5e BA MIN MAX MIN MAX A1 0.00 0.15 0 0.006 A2 2.20 2.50 0.087 0.098 b 0.55 0.75 0.022 0.03 b1 5.00 5.30 0.197 0.209 c 0.40 0.60 0.016 0.024 c1 0.40 0.60 0.016 0.024 D 6.30 6.70 0.248 0.264 E 5.40 5.80 0.213 0.228 e HE 9.00 10.00 0.354 0.394 L 2.20 2.80 0.087 0.11 L1 0.80 1.40 0.031 0.055 L2 1.20 1.80 0.047 0.071 Lp 1.00 1.60 0.039 0.063 x - 0.25 - 0.01 MIN MAX MIN MAX b5 - 1.00 - 0.04 b6 - 5.20 - 0.205 ｌ1 - 2.50 - 0.098 ｌ2 - 5.50 - 0.217 ｌ3 - 10.00 - 0.394 0.90 0.035 0.25 0.01 2.30 0.09 5.30 0.209 DIM MILIMETERS INCHES DIM MILIMETERS INCHES 5.00 0.20 0.75 0.03 12/12 2012.08 - Rev.A

R1120Awww.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when design ing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Produc ts. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. T h e P r o d u c t s a r e n o t d e s i g n e d o r m a n u f a c t u r e d t o b e u s e d w i t h a n y e q u i p m e n t , d e v i c e o r system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.