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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch MOSFET RSD200N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping Code TL Basic ordering unit (pieces) 2500 RSD200N05 Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 45 V Gate-source voltage V GSS 20 V Continuous I D 20 A Pulsed I DP 40 A Continuous I S 16 A Pulsed I SP 40 A Power dissipation P D 20 W Channel temperature T ch 150 C Range of storage temperature T stg 55to150 C *1 Pw≤10s, Duty cycle≤1% *2 Tc=25C Thermal resistance Symbol Limits Unit Channel to Case R th (ch-c) 6.25 C / W * Tc=25C Parameter Type Source current (Body Diode) Drain current Parameter CPT3 (SC-63) <SOT-428> ýõü ùõúïùð ïúð ÷õýü ÷õĀ ïøð ÷õþü ùõú÷õĀ üõø øõüüõü ùõú ÷õü øõ÷ ÷õü Āõü ùõü÷õÿĔİĵõ øõü (1) Gate (2) Drain (3) Source 1 ESD PROTECTION DIODE 2 BODY DIODE (1) (2) (3) 1/6 2011.08 - Rev.A Not Recommended for New Designs
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD200N05 Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS -- 10 AV GS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 45 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS -- 1 AV DS=45V, VGS=0V Gate threshold voltage V GS (th) 1.0 - 2.5 V V DS=10V, ID=1mA -2 0 2 8 I D=20A, VGS=10V -2 5 3 5 I D=20A, VGS=4.5V -2 8 4 0 I D=20A, VGS=4.0V Forward transfer admittance l Y fs l1 0 - - S I D=20A, VDS=10V Input capacitance C iss - 950 - pF V DS=10V Output capacitance C oss - 250 - pF V GS=0V Reverse transfer capacitance C rss - 120 - pF f=1MHz Turn-on delay time t d(on) - 10 - ns I D=10A, VDD 25V Rise time t r - 20 - ns V GS=10V Turn-off delay time t d(off) - 50 - ns R L=2.5 Fall time t f - 20 - ns R G=10 Total gate charge Q g - 12 - nC V DD 25V Gate-source charge Q gs - 3.5 - nC I D=20A, Gate-drain charge Qgd - 4.0 - nC V GS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Symbol Min. Typ. Max. Unit Forward Voltage V SD - - 1.2 V I s=20A, VGS=0V *Pulsed Conditions Conditions Parameter Parameter Static drain-source on-state resistance R DS (on) 2/6 2011.08 - Rev.A Not Recommended for New Designs
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD200N05 Electrical characteristic curves (Ta=25C) 0 0.2 0.4 0.6 0.8 1 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.1 Typical Output Characteristics (Ⅰ) VGS=2.5V VGS=10.0V VGS=4.0V VGS=4.5V VGS=2.8V VGS=3.0V VGS=2.6V VGS=3.5V Ta=25°C pulsed 0 2 4 6 8 10 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.2 Typical Output Characteristics (Ⅱ) VGS=10.0V VGS=2.8V VGS=2.6V VGS=4.5V VGS=4.0V Ta=25°C pulsed 100 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Current : ID [A] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.5V VGS=4.0V VGS=10V Ta=25°C pulsed 100 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mW] Drain Current : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mW] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mW] Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 3/6 2011.08 - Rev.A Not Recommended for New Designs
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD200N05 0.01 0.1 100 0.01 0.1 1 10 100 Forward Transfer Admittance |Yfs| [S] Drain Current : ID [A] Fig.7 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.001 0.01 0.1 100 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.8 Typical Transfer Characteristics VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 100 0.0 0.5 1.0 1.5 Source Current : IS [A] Source-Drain Voltage : VSD [V] Fig.9 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 120 150 0 2 4 6 8 10 12 14 16 18 20 Static Drain-Source On-State Resistance RDS(on) [mΩ] Gate-Source Voltage : VGS [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage ID=20A ID=10A Ta=25°C pulsed 100 1000 10000 0.01 0.1 1 10 100 Switching Time : t [ns] Drain Current : ID [A] Fig.11 Switching Characteristics td(on) tr td(off) tf VDD≒25V VGS=10V RG=10Ω Ta=25°C Pulsed 0 2 4 6 8 10 12 14 16 18 20 22 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.12 Dynamic Input Characteristics Ta=25°C VDD=25V ID=20A Pulsed 4/6 2011.08 - Rev.A Not Recommended for New Designs
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD200N05 100 1000 10000 100000 0.01 0.1 1 10 100 Capacitance : C [pF] Drain-Source Voltage : VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 Drain Current : ID [ A ] Drain-Source Voltage : VDS [ V ] Fig.14 Maximum Safe Operating Area Tc=25°C Single Pulse Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs PW = 1ms PW = 10ms 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance : r（t） Pulse width : Pw (s) Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width TC=25°C Single Pulse Rth(ch-c)=6.25°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 5/6 2011.08 - Rev.A Not Recommended for New Designs
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD200N05 Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90% 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd 6/6 2011.08 - Rev.A Not Recommended for New Designs
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes Not Recommended for New Designs