RSD100N10

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch MOSFET RSD100N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) 4V drive. 3) High power package. Application Switching Packaging specifications Inner circuit Package Taping Code TL Basic ordering unit (pieces) 2500 RSD100N10  Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 100 V Gate-source voltage V GSS 20 V Continuous I D 10 A Pulsed I DP 20 A Continuous I S 10 A Pulsed I SP 20 A Power dissipation P D 20 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 6.25 C / W * TC=25°C Parameter Type Source current (Body Diode) Drain current Parameter (1) Gate (2) Drain (3) Source 1 ESD PROTECTION DIODE 2 BODY DIODE CPT3 (SC-63) <S OT -428> 6.5 2.3(2) (3) 0.65 0.9 (1) 0.75 2.3 0.9 5.1 1.55.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8Min. 1.5 (1) (2) (3) 1/6 2011.06 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD100N10 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 10 AV GS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 100 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS -- 1 AV DS=100V, VGS=0V Gate threshold voltage V GS (th) 1 - 2.5 V V DS=10V, ID=1mA - 95 133 I D=5A, VGS=10V - 100 140 I D=5A, VGS=4.5V - 105 147 I D=5A, VGS=4V Forward transfer admittance l Y fs l 4.5 - - S V DS=10V, ID=5A Input capacitance C iss - 700 - pF V DS=25V Output capacitance C oss - 65 - pF V GS=0V Reverse transfer capacitance C rss - 40 - pF f=1MHz Turn-on delay time t d(on) - 10 - ns V DD 50V, ID=5A Rise time t r - 17 - ns V GS=10V Turn-off delay time t d(off) - 50 - ns R L=10 Fall time t f - 20 - ns R G=10 Total gate charge Q g - 18 - nC V DD 50V, ID=10A Gate-source charge Q gs -2 - n C V GS=10V Gate-drain charge Q gd - 4.5 - nC *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage V SD - - 1.5 V I s=10A, VGS=0V *Pulsed Conditions Conditions Parameter Parameter Static drain-source on-state resistance R DS (on) 2/6 2011.06 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD100N10 Electrical characteristic curves (Ta=25C) 0 0.2 0.4 0.6 0.8 1 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.1 Typical Output Characteristics (Ⅰ) VGS=2.5V VGS=10.0V VGS=4.0V VGS=4.5V VGS=2.8V VGS=2.0V Ta=25°C pulsed 0 2 4 6 8 10 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.2 Typical Output Characteristics (Ⅱ) VGS=2.5V VGS=10.0V VGS=4.0V VGS=4.5V VGS=2.8V VGS=2.0V Ta=25°C pulsed 100 1000 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Current : ID [A] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=4.5V VGS=10V Ta=25°C pulsed 100 1000 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Current : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 1000 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 1000 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 3/6 2011.06 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD100N10 0.01 0.1 100 0.01 0.1 1 10 100 Forward Transfer Admittance Yfs [S] Drain Current : ID [A] Fig.7 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.001 0.01 0.1 100 Drain Currnt : ID [A] Gate-Source Voltage : VGS [V] Fig.8 Typical Transfer Characteristics VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 100 Source Current : Is [A] Source-Drain Voltage : VSD [V] Fig.9 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 150 200 250 0 2 4 6 8 10 Static Drain-Source On-State Resistance RDS(on) [mΩ] Gate-Source Voltage : VGS [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage ID=10A ID=5A Ta=25°C pulsed 100 1000 10000 0.01 0.1 1 10 100 Switching Time : t [ns] Drain Current : ID [A] Fig.11 Switching Characteristics td(on) tr td(off) tf VDD≒50V VGS=10V RG=10Ω Ta=25°C Pulsed 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.12 Dynamic Input Characteristics Ta=25°C VDD=50V ID=10A Pulsed 4/6 2011.06 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD100N10 100 1000 10000 0.01 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage : VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss Coss Crss 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance : r（t） Pulse width : Pw (s) Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25°C Single Pulse Mounted on a recommended land. (20mm × 20mm × 0.8mm) Rth(ch-a)=111.7°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.1 100 0.1 1 10 100 1000 Drain Current : ID [ A ] Drain-Source Voltage : VDS [ V ] Fig.15 Maximum Safe Operating Area TC=25°C Single Pulse Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs PW = 1ms PW = 10ms DC Operation 5/6 2011.06 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RSD100N10 Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd 6/6 2011.06 - Rev.A

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes