RRL025P03 ROHM

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1/4 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A 4V Drive Pch MOSFET RRL025P03 zStructure zDimensions (Unit : mm) Silicon P-channel MOSFET zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching zPackaging specifications zInner circuit Package Code Taping Basic ordering unit (pieces) RRL025P03 TR 3000 Type zAbsolute maximum ratings (Ta=25°C) Parameter VVDSS Symbol VVGSS AID AIDP AIS AISP WPD °CTch °CTstg Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Source current (Body diode) −30 150 −55 to +150 ±20 ±2.5 ±10 −0.8 −10 zThermal resistance Parameter °C/WRth(ch-a) Symbol Limits Unit Channel to ambient 125 ∗ When mounted on a ceramic board (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (6) (1) (5) (2) (4) (3) TUMT6 Abbreviated symbol : UA 0.2Max.

2/4 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A Data Sheet RRL025P03 zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Yfs Min. Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed −± 10 µAV GS= ±20V, VDS=0V VDD −15V, ID= −2.5A −30 −− VI D= −1mA, VGS=0V −− − 1 µAV DS= −30V, VGS=0V −1.0 −− 2.5 V V DS= −10V, ID= −1mA − 55 75 I D= −2.5A, VGS= −10V − 85 115 m Ω mΩ mΩ ID=−1.2A, VGS= −4.5V 2 −− SV DS= −10V, ID= −2.5A − 480 − pF V DS= −10V − 70 − pF V GS=0V − pF f=1MHz − ns − ns − ns 5.2 − ns 1.6 − nC 1.6 − nC V GS= −5V −− nC VDD −15V ID= −1.2A VGS= −10V RL 12.5Ω RG =10Ω RL 6Ω RG =10Ω zBody diode characteristics (Source-drain) (Ta=25°C) VSD −− − 1.2 V I S= −2.5A, VGS=0VForward voltage Parameter Symbol Min. Typ. Max. Unit Conditions ∗Pulsed

3/4 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A Data Sheet RRL025P03 zElectrical characteristic curves 0.5 1.5 2.5 0 0.2 0.4 0.6 0.8 1 -3.2V -2.8V -10V -4.5V -3.0V -3.8V Ta=25°C Pulsed VGS=-2.5V 0.001 0.01 0.1 01234 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 1000 0.1 1 10 VGS= -4.0V VGS= -4.5V VGS= -10V Ta=25°C Pulsed 0.01 0.1 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.5 1.5 2.5 02468 1 0 -3.2V -10V -4.5V -3.6V -3.0V VGS= -2.8V Ta=25°C Pulsed 100 1000 0.1 1 10 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1000 0.1 1 10 VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.1 1 10 VDS= -10V Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 100 1000 0.1 1 10 VGS= -4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.8 Forward Transfer Admittance vs. Drain Current DRAIN CURRENT : -ID[A] DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -V DS[V] DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] DRAIN-CURRENT : -ID[A] REVERSE DRAIN CURRENT : -Is [A] SOURCE-DRAIN VOLTAGE : -VSD [V]

4/4 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A Data Sheet RRL025P03 zMeasurement circuit Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90% 10% 10 % 10% Pulse width 50% VGS VDS ton toff trtd(on) tftd(off) 50% Fig.2-1 Gate Charge Measurement Circuit VGS IG (Const.) RG VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd 100 200 300 02468 1 0 Ta=25°C Pulsed ID= -1.5A ID= -3.0A 02468 1 0 Ta=25°C VDD = -15V ID= -2.5A RG=10Ω Pulsed 100 1000 0.01 0.1 1 10 100 Ciss Crss Ta=25°C f=1MHz V GS=0V Coss 100 1000 0.01 0.1 1 10 tr td(on) td(off) Ta=25°C VDD = -15V VGS= -10V RG=10Ω Pulsed tf Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.12 Dynamic Input Characteristics Fig.13 Ty pical Capacitance vs. Drain-Source Voltage Fig.11 Sw itching Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] GATE-SOURCE VOLTAGE : -VGS[V] SWITCHING TIME : t [ns] DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS [V] TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V] CAPACITANCE : C [pF]

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