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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4.5V Drive Nch MOSFET RMW150N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). Application Switching Packaging specifications Inner circuit Package Taping Code TB Basic ordering unit (pieces) 2500 RMW150N03  Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 30 V Gate-source voltage V GSS 20 V Continuous I D 15 A Pulsed I DP 60 A Continuous I S 2.5 A Pulsed I SP 60 A Power dissipation P D 3.0 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD Thermal resistance Symbol Limits Unit Channel to Ambient Rth (ch-a) 41.7 C / W *2 MOUNTED ON 40mm×40mm Cu BOARD Parameter Type Source current (Body Diode) Drain current Parameter PSOP8 5.0 6.0 0.50.5 5.0 0.4 1pin mark (1) (2) (3) (4) (8) (7) (6) (5) 0.22 0.9 0~0.1 1.27 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (8) (7) (6) (5) (1) (2) (3) (4) 1/6 2011.03 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RMW150N03 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 10 AV GS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 30 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS -- 1 AV DS=30V, VGS=0V Gate threshold voltage V GS (th) 1.0 - 2.5 V V DS=10V, ID=1mA - 6.5 9.1 I D=15A, VGS=10V - 9.0 12.6 I D=15A, VGS=4.5V Forward transfer admittance l Y fs l1 0 - - S I D=15A, VDS=10V Input capacitance C iss - 831 - pF V DS=15V Output capacitance C oss - 337 - pF V GS=0V Reverse transfer capacitance C rss - 95 - pF f=1MHz Turn-on delay time t d(on) - 12 - ns I D=7.5A, VDD 15V Rise time t r - 38 - ns V GS=10V Turn-off delay time t d(off) - 34 - ns R L=2.0 Fall time t f -9 - n s R G=10 Total gate charge Q g - 15 - nC I D=15A, VDD 15V Gate-source charge Q gs - 2.6 - nC V GS=10V Gate-drain charge Q gd - 3.0 - nC *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Symbol Min. Typ. Max. Unit Forward Voltage V SD - - 1.2 V I s=2.5A, VGS=0V *Pulsed Conditions Conditions Parameter Parameter Static drain-source on-state resistance R DS (on)* 2/6 2011.03 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RMW150N03 Electrical characteristic curves (Ta=25C) 0 0.2 0.4 0.6 0.8 1 VGS= 2.5V VGS= 3.0V VGS= 10V VGS= 4.5V VGS= 3.5V Ta=25°C Pulsed Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN CURRENT : ID[A] 0 2 4 6 8 10 VGS= 2.5V VGS= 10.0V VGS= 4.5V VGS= 3.5V VGS= 3.0V Ta=25°C Pulsed Fig.2 Typical Output Characteristics(Ⅱ) DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN CURRENT : ID[A] Fig.3 Typical Transfer Characteristics DRAIN CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V] 100 0.01 0.1 1 10 100 VGS= 4.5V VGS= 10V Ta=25°C Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 0.01 0.1 1 10 100 VGS= 10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 0.01 0.1 1 10 100 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) DRAIN-CURRENT : ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.001 0.01 0.1 100 0 1 2 3 4 VDS= 10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 3/6 2011.03 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RMW150N03 0.1 100 0.01 0.1 1 10 100 VDS= 10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.7 Forward Transfer Admittance vs. Drain Current FORWARD TRANSFER ADMITTANCE : |Yfs| [S] DRAIN-CURRENT : ID[A] 0.01 0.1 100 0 0.5 1 1.5 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.8 Reverse Drain Current vs. Sourse-Drain Voltage SOURCE CURRENT : Is [A] SOURCE-DRAIN VOLTAGE : VSD [V] 0 5 10 15 ID= 15.0A ID= 7.5A Ta=25°C Pulsed Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] GATE-SOURCE VOLTAGE : VGS[V] 100 1000 10000 0.01 0.1 1 10 100 tf td(on) td(off) Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tr Fig.10 Switching Characteristics SWITCHING TIME : t [ns] DRAIN-CURRENT : ID[A] 0 5 10 15 20 Ta=25°C VDD=15V ID=15A RG=10Ω Pulsed Fig.11 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] TOTAL GATE CHARGE : Qg [nC] 100 1000 10000 0.01 0.1 1 10 100 Ciss Coss Crss Ta=25°C f=1MHz VGS=0V Fig.12 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS[V] CAPACITANCE : C [pF] 4/6 2011.03 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RMW150N03 0.001 0.01 0.1 100 1000 0.1 1 10 100 PW = 1ms DC operation Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW=10ms Ta = 25°C Single Pulse Mounted on a COPPER board Fig.13 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN CURRENT : ID (A) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 41.7 °C/W <Mounted on a COPPER board> Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width PULSE WIDTH : Pw(s) NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 5/6 2011.03 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RMW150N03 Measurement circuits Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. VGS RG VDS D.U.T. ID RL VDD 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) VG VGS Charge Qg Qgs Qgd VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 6/6 2011.03 - Rev.A

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes