RLS245 ROHM
Document overview
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Technical content
!Applications High voltage switching General purpose rectification !Features 1) Small surface mounting type. (LLDS) 2) VRM=250V guaranteed. 3) High reliability !Construction Silicon epitaxial planar !!!!External dimensions (Units : mm) −0.1 +0.2 φ1.5Max. φ1.4±0.1 0.40.4 3.4 CATHODE BAND (WHITE) EIAJ : − JEDEC : LL-34 ROHM : LLDS !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 250 V DC reverse voltage VR 220 V IFM 625 mA Mean rectifying current IO 200 mA Isurge 1000 mA Power dissipation 300 mW Junction temperature 175 °C Storage temperature °C Surge current (1s) Peak forward current Tj Tstg P −65~+175 !!!!Electrical characteristics (Ta=25°C) Parameter Symbol Min. Max. Unit Conditions Forward voltage VF −− 1.5 V I F=200mA Reverse current IR −− 10 µAV R=220V Capacitance between terminals −− 3p F V R=0V, f=1MHz Reverse recovery time trr −− 75 ns I F=20mA, IR =20mA, RL=50Ω Typ. CT
!!!!Electrical characteristic curves (T a=25°C) 25˚C−25˚C 0.5 100 200 Ta=125˚C FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics 100˚C 75˚C 50˚C Ta=25˚C 50 100 150 200 250 300 35010n 100n 10µ REVERSE CURRENT : IR (A) 1.1 1.0 0.9 0.8 0.7 0.6012345 REVERSE VOLTAGE : VR (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig. 3 Capacitance between terminals characteristics IR=10mA 140 120 100 0 5 1 01 52 02 53 03 5 I rr=1mA REVERSE RECOVERY TIME : trr (ns) FORWARD CURRENT : IF (mA) Fig. 4 Reverse recovery time characteristics Fig.5 Surge current characteristics 0 1 10 100 1000 SURGE CURRENT : Isurge (A) PULSE WIDTH : Tw (ms) PULSE GENERATOR OUTPUT 50Ω SAMPLING OSCILLOSCOPE50Ω 0.01µF D.U.T. 5kΩ Fig. 6 Reverse recovery time (trr) measurement circuit