RK9410 ROHM

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Switching (30V, 7A) RK9410 zFeatures 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. zzzzStructure Silicon N-channel MOS FET zzzzEquivalent circuit (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain (1) (2) (3) (1) (2) (3) (4)(4) ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zzzzExternal dimensions (Units : mm) ROHM : SOP8 3.9−+0.15 1.5−+0.1 0.15 6.0−+0.3 Max.1.75 0.5−+0.1 5.0−+0.2 1.27 0.4−+0.1 0.1 0.2−+0.1 (1) (4) (8) (5) Each lead has same dimensions zzzzAbsolute maximum ratings (Ta=25°C) VDSS VGSS IDR PD Tch 30 V V A A W ±20 D IDRP ∗ A IDP ∗ A28 150 Is Isp∗ A A 1.3 5.2 Tstg ˚C −55∼+150 Symbol Limits UnitParameter ∗ Pw≤10ms, Duty cycle≤1% Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Source Current (Body Diode) Total Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Continuous Pulsed

zzzzThermal resistance (T a=25°C) Rth(ch-A) 62.5 ˚C / W Symbol Limits UnitParameter Channel to Ambient zzzzElectrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS =0V f=1MHz VDS =10V VGS =10V ID =3.5A, VDD 15V R L=4.3Ω R GS =10Ω µA pF m Ω S Unit V µA V pF pF ns ns ns ns nC nC I D =7A, VGS =10V 1.0 Min. 710 Typ. 400 200 5.2 3.3 ±10 2.5 I D =7A, VGS =4.5V− 28 37 Max.

43 I D =7A, VGS =4V

ID =7A, VDS =10V ID =1mA, VGS =0V VGS =±20V, VDS =0V VDS =30V, VGS =0V VDS =10V, ID =1mA nC V DD =15V VGS =10V ID =7A − 20.5 41 Static Drain-Source On-State Resistance ∗ Pulsed IGSS IDSS l Yfs l∗ C iss Symbol C oss C rss tr∗ tf∗ Q gd∗ Q gs∗ Q g∗ V (BR) DSS VGS (th) R DS (on) td (on)∗ td (off)∗ zzzzBody diode characteristics (Source-Drain Characteristics) (T a=25°C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions V Unit ns nC Min. 155 145 Typ. 1.5 Max. I DR =5.2A, VGS =0V Is=5.2A, VGS =0V di/dt=100A/µs VSD ∗ trr∗ Q rr∗ Symbol ∗ Pulsed

zzzzElectrical characteristic curves 0.1 0.01 Fig.1 Reverse Drein Current vs. Source - Drain Voltage REVERSE DREIN CURRENT : I DR (A) 0.0 0.5 1.0 1.5 SOURCE - DRAIN VOLTAGE : V GS (V) Ta=125˚C 75˚C −25˚C 25˚C VDS =0V Pulsed 0.1 100 0.10.01 1 10 Pulsed VDS =10V Ta=−25˚C 25˚C 75˚C 125˚C 0.01 DRAIN CURRENT : ID (A) Fig.2 Forward Transfer Admittance vs. Drain CurrentFORWARD TRANSFER ADMITTANCE : I Y fS I (S) Pulsed VGS =10V 100.1 0.1 0.01 0.001 DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω ) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) Ta=125˚C 75˚C −25˚C 25˚C Pulsed VGS =4V 100.1 0.1 0.01 0.001 Ta=125˚C 75˚C −25˚C 25˚C DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω ) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0−25 50 75 100 125 150 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω ) CHANNEL TEMPERATURE : Tch (˚C) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature −50 25 VGS =10V ID =7A Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.100 0.060 0.080 0.020 0.040 0.000 0 2 4 6 8 1 01 21 41 61 82 0 GATE-SOURCE VOLTAGE : V GS (V) ON-STATE RESISTANCE : RDS (on) (Ω ) STATIC DRAIN-SOURCE Ta=25˚C Pulsed ID = 7A 3.5A 25 50 4.000 3.000 2.000 1.000 0.000 −25 0−50 75 100 125 150 GATE THRESHOLD VOLTAGE : V GS (th) (V) CHANNEL TEMPERATURE : T ch (˚C) Fig.7 Gate Threshold Voltage vs. Channel Temperature VDS =10V ID =1mA Pulsed 10000 1000 100 0.1 1 10 100 Ta=25˚C f=1MHz VGS =0V Pulsed Fig.8 Typical Capacitance vs. Drain-Source Voltage CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : V DS (V) C iss C oss C rss 0 8 16 24 32 Ta=25˚C VDD =24V ID =7A Pulsed VDS VGS TOTAL GATE CHARGE : Qg (nC) DRAIN-SOURCE VOLTAGE : V DS (V) GATE-SOURCE VOLTAGE : V GS (V) Fig.9 Dynamic Input Characteristics

0.1 1 10 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) Fig.10 Switching Characteristics Ta=25˚C VDD =15V VGS =10V R G =10Ω Pulsed tf td (off) tr td (on) 108642 DRAIN-SOURCE VOLTAGE : V DS (V) Fig.11 Typical Output CharacteristicsDRAIN CURRENT : ID (A) VGS =3.5V VGS =3V VGS =2.5V VGS =4V VGS =5V VGS =4.5V NORMALIZED TRANSIENT THERMAL RESISTANCE : r (t) PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width 10µ 100µ 1m 10m 100m 1 10 100 0.1 0.01 0.001 D=0.02 D=Single D=0.01 D=0.05 D=0.1 D=1 D=0.2 D=0.5 Tc=25˚C θth (ch-c) (t)=r (t) θth (ch-c) θth (ch-c)=6.25˚C / W PW T D= PW T