RK4936

RK4936 ROHM

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Technical content

Switching (30V, 6A) RK4936 zzzzFeatures 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. zzzzStructure Silicon N-channel MOS FET zzzzEquivalent circuit (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (8) (7) (6) (5) (1) (2) (3) (4) ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (5)(6)(7)(8) (4) ∗ ∗ zzzzExternal dimensions (Units : mm) ROHM : SOP8 3.9−+0.15 1.5−+0.1 0.15 6.0−+0.3 Max.1.75 0.5−+0.1 5.0−+0.2 1.27 0.4−+0.1 0.1 0.2−+0.1 (1) (4) (8) (5) Each lead has same dimensions zzzzAbsolute maximum ratings (Ta = 25°C) VDSS VGSS IDR PD Tch 30 V V A A W ±20 D IDRP ∗ A IDP ∗ A24 150 Is Isp∗ A A 1.3 5.2 Tstg °C −55~+150 Symbol Limits UnitParameter ∗Pw ≤10µs, Duty cycle≤1% Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Source Current (Body Diode) Total Power Dissipation(Tc=25°C) Channel Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Continuous Pulsed

zzzzThermal resistance (T a = 25°C) Rth(ch-A) 62.5 °C/W Symbol Limits UnitParameter Channel to Ambient zzzzElectrical characteristics (Ta = 25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS =0V f=1MHz VDS =10V VGS =10V R L=5Ω R GS =10Ω µA pF m Ω S Unit V µA V pF pF ns ns ns ns nC nC I D =6A, VGS =10V 1.0 Min. 740 Typ. 420 180 5.6 2.7 ±10 2.5 I D =6A, VGS =4.5V− 32 42 Max.

52 I D =6A, VGS =4V

ID =6A, VDS =10V ID =1mA, VGS =0V VGS =±20V, VDS =0V VDS =30V, VGS =0V VDS =10V, ID =1mA IGSS IDSS l Yfs l∗ C iss Symbol C oss C rss tr∗ tf∗ Q gd∗ Q gs∗ nC V DD =15V VGS =10V ID =6A − 21 42Q g∗ V(BR) DSS VGS(th) R DS(on)∗ td(on)∗ td(off)∗ Static Drain-Source On-State Resistance ∗Pulsed ID =3A, VDD 15V zzzzBody diode characteristics (Source-Drain characteristics) (Ta = 25°C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions V Unit ns nC Min. 140 140 Typ. 1.5 Max. I DR =5.2A, VGS =0V Is=5.2A, VGS =0V di/dt=100A/µs VSD ∗ trr∗ Q rr∗ Symbol ∗Pulsed

zzzzElectrical characteristic curves 0.1 0.01 Fig.1 Reverse Drein Current vs. Source-Drain Voltage REVERSE DREIN CURRENT : I DR (A) 0.0 0.5 1.0 1.5 SOURCE - DRAIN VOLTAGE : V GS (V) Ta=125°C 75°C −25°C 25°C VDS =0V Pulsed 0.1 100 0.10.01 1 10 Pulsed VDS =10V Ta=−25°C 25°C 75°C 125°C 0.01 DRAIN CURRENT : ID (A) Fig.2 Forward Transfer Admittance vs. Drain CurrentFORWARD TRANSFER ADMITTANCE : I Y fS I (S) Pulsed VGS =10V 100.1 0.1 0.01 0.001 DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (Ω ) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Ta=125°C 75°C −25°C 25°C Pulsed VGS =4V 100.1 0.1 0.01 0.001 Ta=125°C 75°C −25°C 25°C DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (Ω ) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0−25 50 75 100 125 150 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (Ω ) CHANNEL TEMPERATURE : Tch (°C) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature −50 25 VGS =10V ID =6A Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.100 0.060 0.080 0.020 0.040 0.000 0 2 4 6 8 1 01 21 41 61 82 0 GATE-SOURCE VOLTAGE : V GS (V) ON-STATE RESISTANCE : RDS(on) (Ω ) STATIC DRAIN-SOURCE Ta=25°C Pulsed ID =6A 25 50 4.000 3.000 2.000 1.000 0.000 −25 0−50 75 100 125 150 GATE THRESHOLD VOLTAGE : V GS(th) (V) CHANNEL TEMPERATURE : T ch (°C) Fig.7 Gate Threshold Voltage vs. Channel Temperature VDS =10V ID =1mA Pulsed 10000 1000 100 0.1 1 10 100 Ta=25°C f=1MHz VGS =0V Pulsed Fig.8 Typical Capacitance vs. Drain-Source Voltage CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : V DS (V) C iss C oss C rss 0 8 16 24 32 Ta=25°C VDD =24V ID =6A Pulsed VDS VGS TOTAL GATE CHARGE : Qg (nC) DRAIN-SOURCE VOLTAGE : V DS (V) GATE-SOURCE VOLTAGE : V GS (V) Fig.9 Dynamic Input Characteristics

0.1 1 10 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) Fig.10 Switching Characteristics Ta=25°C VDD =15V VGS =10V R G =10Ω Pulsed tf td(off) tr td(on) 108642 DRAIN-SOURCE VOLTAGE : V DS (V) Fig.11 Typical Output CharacteristicsDRAIN CURRENT : ID (A) VGS =3V VGS =2.5V VGS =3.5V VGS =5V VGS =4.5V VGS =4V NORMALIZED TRANSIENT THERMAL RESISTANCE : r (t) PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width 10µ 100µ 1m 10m 100m 1 10 100 0.1 0.01 0.001 D=0.02 D=Single D=0.01 D=0.05 D=0.1 D=1 D=0.2 D=0.5 Tc=25°C θth(ch-c) (t)=r(t) θth(ch-c) θth(ch-c)=6.25°C / W PW T D= PW T