RHO7_15 LINER
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of circuits as described herein will not infringe on existing patent rights. WU UI FOR ATIOBUR -I CIRCUITU U 200W 10k –20V 20V 10k 30pF4 RH07 BI PACKAGE/ D UESCRIPTIO A UGWA WU WARBSOLUTEX I T I S The RH07 is a precision op amp which provides very low offset voltage, low drift and low noise. In the design, processing and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications, performance curves, application notes and applications circuits, see the OP-07 data sheet. TOP VIEW VOS TRIM –IN OUT NC+IN H PACKAGE 8-LEAD TO-5 METAL CAN 1 7 VOS TRIM TOP VIEW VOS TRIM –IN +IN V VOS TRIM OUT NC J8 PACKAGE 8-LEAD CERAMIC DIP
TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) (Note 5) TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VOS Input Offset Voltage 1 75 4 200 2,3 mV DVOS Avg Input Offset Voltage Drift: DTemp Without External Trim 3 1.3 mV/°C With External Trim Null Pot = 20k W 3 1.3 mV/°C DVOS Long-Term Input Offset 2,3 1 mV/Mo DTime Voltage Stability IOS Input Offset Current 2.8 1 5.6 2,3 nA DIOS Avg Input Bias Current Drift 3 50 pA/ °C DTemp IB Input Bias Current – 31 – 6 2,3 nA DIB Avg Input Bias Current Drift 3 50 pA/ °C DTemp en Input Noise Voltage 0.1Hz to 10Hz 3 0.6 mVP-P Input Noise Voltage Density f O = 10Hz 4 18 nV/ ÖHz fO = 100Hz 3 13 nV/ ÖHz fO = 1000Hz 3 11 nV/ ÖHz in Input Noise Current 0.1Hz to 10Hz 3 30 pA P-P Input Noise Current Density f O = 10Hz 3 0.80 pA/ ÖHz fO = 100Hz 3 0.23 pA/ ÖHz fO = 1000Hz 3 0.17 pA/ ÖHz RIN Input Resistance: Differential Mode 3 20 M W Common Mode 200 G W Input Voltage Range 3 –13.5 –13.5 V CMRR Common-Mode V CM = –13V 110 1 106 2,3 dB Rejection Ratio PSRR Power Supply Rejection Ratio V S = –3V to –18V 100 1 94 2,3 dB AVOL Large-Signal Voltage Gain R L ‡ 2k, VO = – 10V 200 4 150 5,6 V/mV RL ‡ 500W , VO = –0.5V 3 150 V/mV VS = – 3V VOUT Maximum Output R L ‡ 10k –12.5 4 Voltage Swing R L ‡ 2k –12.0 4 –12.0 5,6 RL ‡ 1k –10.5 4 SR Slew Rate R L ‡ 2k 3 0.1 V/ ms GBW Closed-Loop Bandwidth A VCL = 1 3 0.4 MHz PD Power Dissipation V S = –15V 120 1 mW VS = – 3V 6 1 mW –55°C £ TA £ 125°C
ELECTRICAL CHARACTERISTICSTABLE 1A: (Post-Irradiation) (Note 6) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 1 90 150 200 250 300 mV IOS Input Offset Current 2.8 4 8 12 20 nA IB Input Bias Current –3 – 10 –25 –50 –100 nA CMRR Common-Mode V CM = –13V 110 110 105 100 95 dB Rejection Ratio PSRR Power Supply V S = –3V to –18V 100 100 100 95 90 dB Rejection Ratio AVOL Large-Signal Voltage Gain R L ‡ 2k, VO = –10V 200 200 180 150 120 V/mV Voltage Swing PD Power Dissipation 120 120 120 120 120 mW 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) Note 1: Offset voltage is measured with high speed test equipment approximately 0.5 seconds after power is applied. Note 2: Long-term input offset voltage stability refers to the averaged trend line of VOS vs. time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5mV. Note 3: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 4: 10Hz noise voltage density is sample tested on every lot to an LTPD of 15. Devices 100% tested at 10Hz are available on request. Note 5: VS = –15V, VCM = 0V, unless otherwise noted. Note 6: TA = 25°C, VS = –15V, VCM = 0V, unless otherwise noted. TOTAL DOSE BIAS CURRE TU +8V –15V 15V 10k RH07 F01 10k MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S, and 1 Group C and D for Class B End Point Electrical Parameters (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. TABLE 2: ELECTRICAL TEST REQUIRE E TSUW PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn- in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given.
Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 l FAX: (408) 434-0507 l TELEX: 499-3977 ª LINEAR TECHNOLOGY CORPORATION 1 993 LT/LT 0803 REV B • PRINTED IN USA CCHARA TERISTICSUWATYPICALP E RFOR CE TOTAL DOSE KRAD (Si) POSITIVE SLEW RATE (V/ms) 0.4 0.3 0.2 0.1 10 100 1000 RH07 G01 VS = ±15V RL = 2k Positive Slew Rate TOTAL DOSE KRAD (Si) NEGATIVE SLEW RATE (V/ms) 0.4 0.3 0.2 0.1 10 100 1000 RH07 G02 VS = ±15V RL = 2k TOTAL DOSE KRAD (Si) INPUT OFFSET VOLTAGE (mV) 150 100 –50 –100 –150 –200 10 100 1000 RH07 G03 VS = ±15V VCM = 0V Input Offset Voltage Open-Loop Gain Common-Mode Rejection Ratio TOTAL DOSE KRAD (Si) VOLTAGE GAIN (dB) 150 140 130 120 110 100 10 100 1000 RH07 G04 VS = ±15V RL = 2k VOUT = ±10V Negative Slew Rate Input Bias Current TOTAL DOSE KRAD (Si) INPUT BIAS CURRENT (nA) 10 100 1000 RH07 G05 VS = ±15V VCM = 0V TOTAL DOSE KRAD (Si) COMMON-MODE REJECTION RATIO (dB) 170 160 150 140 130 120 110 100 10 100 1000 RH07 G06 VS = ±15V VCM = ±13V TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) 10 100 1000 RH07 G07 VS = ±15V VCM = 0V Input Offset Current TOTAL DOSE KRAD (Si) POWER SUPPLY REJECTION RATIO (dB) 140 130 120 110 100 10 100 1000 RH07 G08 VS = ±3V TO ±18V Power Supply Rejection Ratio