RH6200M

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Low Noise, High Speed Rail-to-Rail Op Amp The RH6200 is an ultralow noise, rail-to-rail input and output unity-gain stable op amp that features 0.95nV/√Hz noise voltage. This amplifier combines very low noise with a 165MHz gain bandwidth, 50V/μs slew rate and is optimized for low voltage signal conditioning systems. A shutdown pin reduces supply current during standby conditions and thermal shutdown protects the part from overload conditions. The RH6200 maintains its pre- irradiation performance for supplies from 4.5V to 12.6V and is specified pre- and post-radiation at 5V and ±5V . ABSOLUTE MAXIMUM RATINGS (Note 1) Pin Current While Exceeding Supplies (Note 4) ...±30mA Operating Junction Temperature Range PACKAGE/ORDER INFORMATION 10k 6.3V –6.3V RH6200M F01 200Ω 10k TABLE 1: ELECTRICAL CHARACTERISTICS(Preirradiation) SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage VS = 5V , 0V; VCM = V– to V+ VS = ±5V; VCM = V– to V+ 0.6 2.5 2,3 2,3 mV mV IB Input Bias Current V S = 5V , 0V; VCM = V+ VS = 5V , 0V; VCM = V– VS = ±5V; VCM = V+ VS = ±5V; VCM = V– –50 –50 –23 –23 –100 –200 2,3 2,3 2,3 2,3 μA μA μA μA I OS Input Offset Current VS = 5V , 0V; VCM = V+ VS = 5V , 0V; VCM = V– VS = ±5V; VCM = V+ VS = ±5V; VCM = V– 0.02 0.4 2,3 2,3 2,3 2,3 μA μA μA μA L, L T , L TC, L TM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. ORDER PART NUMBER TOP VIEW W PACKAGE 10-LEAD CERPAC NC NC OUT NC SHDN +IN –IN NC –RH6200MW

TABLE 1: ELECTRICAL CHARACTERISTICS(Preirradiation) SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX Input Noise Voltage 0.1Hz to 10Hz 6 600 nV P-P en Input Noise Voltage Density VS = 5V , 0V; f = 100kHz VS = 5V , 0V; f = 10kHz VS = ±5V; f = 100kHz VS = ±5V; f = 10kHz 1.1 1.5 0.95 1.4 2.4 2.3 nV/√Hz nV/√Hz nV/√Hz nV/√Hz in Input Noise Current Density f = 10kHz Balanced Source f = 10kHz Unbalanced Source 2.2 3.5 pA/√Hz pA/√Hz AVOL Large Signal Open-Loop Voltage Gain V S = 5V , 0V; RL = 1k; VOUT = 0.5V to 4.5V VS = 5V , 0V; RL = 100Ω; VOUT = 1V to 4V VS = 5V , 0V; RL = 100Ω; VOUT = 1.5V to 3.5V VS = ±5V; RL = 1k; VOUT = ±4.5V VS = ±5V; RL = 100Ω; VOUT = ±2V 115 120 200 5.5 5,6 5,6 5,6 5,6 V/mV V/mV V/mV V/mV CMRR Common Mode Rejection Ratio V S = 5V , 0V; VCM = 0V to 5V VS = 5V , 0V; VCM = 1.5V to 3.5V VS = ±5V; VCM = ±5V VS = ±5V; VCM = ±2V 112 100 2,3 2,3 2,3 2,3 dB dB dB dB PSRR Power Supply Rejection Ratio V S = ±2.25V to ±5V 60 68 1 58 2,3 dB VOL Output Voltage Swing Low VS = 5V , 0V; IL = 0 VS = 5V , 0V; IL = 5mA VS = 5V , 0V; IL = 20mA VS = ±5V; IL = 0 VS = ±5V; IL = 5mA VS = ±5V; IL = 20mA 150 150 100 290 110 290 100 150 350 100 150 350 5,6 5,6 5,6 5,6 5,6 5,6 mV mV mV mV mV mV V OH Output Voltage Swing High VS = 5V , 0V; IL = 0 VS = 5V , 0V; IL = 5mA VS = 5V , 0V; IL = 20mA VS = ±5V; IL = 0 VS = ±5V; IL = 5mA VS = ±5V; IL = 20mA 220 110 225 110 190 400 130 210 420 150 250 500 200 275 550 5,6 5,6 5,6 5,6 5,6 5,6 mV mV mV mV mV mV I SC Short-Circuit Current VS = 5V , 0V or VS = ±5V ±60 ±90 1 ±45 2,3 mA IS Supply Current V S = 5V , 0V VS = ±5V 16.5 2,3 2,3 mA mA IS(SHDN) Shutdown Supply Current VS = 5V , 0V VS = ±5V 1.3 1.6 1.8 2.1 2.2 2.5 2,3 2,3 mA mA ISHDN Shutdown Pin Current VS = 5V , 0V or VS = ±5V; VSHDN = 0.3V –280 –200 1 –300 2,3 μA tON Turn-On Time SHDN from Low to High 6 180 ns tOFF Turn-On Time SHDN from High to Low 6 180 ns GBW Gain Bandwidth Product VS = 5V , 0V; at f = 1MHz VS = ±5V; at f = 1MHz 110 145 165 MHz MHz SR Slew Rate V S = 5V , 0V; AV = –1; RL = 1k; VO = 4V VS = ±5V; AV = –1, RL = 1k; VO = 4V V/μs V/μs

(Postirradiation) TA = 25°C Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Inputs are protected by back-to-back diodes. If the differential input voltage exceeds 0.7V , the input current must be limited to less than 40mA. Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. Note 4: There are reverse-biased ESD diodes from all inputs and outputs to the respective supply pins. If these pins are forced beyond either supply, unlimited current will flow through these diodes. If the current is transient in nature and limited to less than 30mA, no damage to the device will occur . TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage V S = 5V , 0V; VCM = V– to V+ VS = ±5V; VCM = V– to V+ 2.2 6.5 2.4 2.6 7.5 2.8 8.5 mV mV IB Input Bias Current V S = 5V , 0V , VCM = V+ VS = 5V , 0V , VCM = V– VS = ±5V , VCM = V+ VS = ±5V , VCM = V– –55 –55 –60 –60 –65 –65 –70 –70 –75 –75 μA μA μA μA I OS Input Offset Current V S = 5V , 0V; VCM = V+ VS = 5V , 0V; VCM = V– VS = ±5V; VCM = V+ VS = ±5V; VCM = V– μA μA μA μA A VOL Large Signal Open Loop Voltage Gain VS = 5V , 0V; RL = 1k; VOUT = 0.5V to 4.5V VS = 5V , 0V; RL = 100Ω; VOUT = 1V to 4V VS = ±5V; RL = 1k; VOUT = ±4.5V VS = ±5V; RL = 100Ω; VOUT = ±2V 110 13.5 100 10.5 7.5 V/mV V/mV V/mV V/mV CMRR Common Mode Rejection Ratio V S = 5V , 0V; VCM = 0V to 5V VS = 5V , 0V; VCM = 1.5V to 3.5V VS = ±5V; VCM = ±5V VS = ±5V; VCM = ±2V dB dB dB dB PSRR Power Supply Rejection Ratio V S = ±2.25V to ±5V 59 58 57 56 55 dB VOL Output Voltage Swing Low VS = 5V , 0V; IL = 0 VS = 5V , 0V; IL = 5mA VS = 5V , 0V; IL = 20mA VS = ±5V; IL = 0 VS = ±5V; IL = 5mA VS = ±5V; IL = 20mA 104 296 114 296 108 302 118 302 112 308 122 308 116 314 126 314 120 320 130 320 mV mV mV mV mV mV V OH Output Voltage Swing High VS = 5V , 0V; IL = 0 VS = 5V , 0V; IL = 5mA VS = 5V , 0V; IL = 20mA VS = ±5V; IL = 0 VS = ±5V; IL = 5mA VS = ±5V; IL = 20mA 114 198 415 134 218 430 118 206 430 138 226 455 122 214 445 142 234 126 222 460 146 242 485 130 230 475 150 250 500 mV mV mV mV mV mV I SC Short-Circuit Current VS = 5V , 0V or VS = ±5V 58 56 54 52 50 mA IS Supply Current V S = 5V , 0V VS = ±5V 20.4 23.4 20.8 23.8 21.2 24.2 21.6 24.6 mA mA IS(SHDN) Shutdown Supply Current VS = 5V , 0V VS = ±5V 1.84 2.14 1.88 2.18 1.92 2.22 1.96 2.26 2.3 mA mA ISHDN Shutdown Pin Current VS = 5V , 0V or VS = ±5V; VSHDN = 0.3V –284 –288 –292 –296 –300 μA Note 5: The RH6200 is tested under pulse load conditions such that TJ ≈ TA. The thermal resistance of the W 10-lead CERPAC package (without heat sink) is estimated at 170°C/W . For a given application, multiply the RMS power dissipation of the RH6200 times the package thermal resistance (including any heat sinking if present) to calculate the temperature difference between the ambient temperature and the junction temperature. The RH6200 has a thermal shutdown feature that protects the part from excessive junction temperature. The amplifier will shut down to an inactive, low current condition when the junction temperature exceeds approximately 160°C. The amplifier will remain shut down until the die cools off to below approximately 150°C, at which point the amplifier will return to normal operation. Note 6: This parameter is not production tested. Typical bench evaluation performance listed for information only.

TOTAL DOSE BIAS CIRCUITTABLE 2: ELECTRICAL TEST REQUIREMENTS *CF IS COMPONENT OR PARASITIC CAPACITANCE ENSURING STABILITY 10k CF* 10k –5V RH6200 F02 TYPICAL PERFORMANCE CHARACTERISTICS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1* , 2, 3, 4, 5, 6 Group A Test Requirements (Method 5005) 1* , 2, 3, 4, 5, 6 Group B and D for Class S, End Point Electrical Parameters (Method 5005) 1, 2, 3 *PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. VOS Distribution, VCM = V+ VOS Distribution, VCM = V– INPUT OFFSET VOLTAGE (μV) –1600–1200 NUMBER OF UNITS 1600 RH6200 G01 –800 –400 0 400 800 1200 VS = 5V, 0V INPUT OFFSET VOLTAGE (μV) –1600–1200 NUMBER OF UNITS 1600 RH6200 G02 –800 –400 0 400 800 1200 VS = 5V, 0V Supply Current vs Supply Voltage TOTAL SUPPLY VOLTAGE (V) SUPPLY CURRENT (mA) 61 0 RH6200 G03 24 81 2 1 4 TA = 125°C TA = –55°C TA = 25°C

TYPICAL PERFORMANCE CHARACTERISTICS Offset Voltage vs Input Common Mode Voltage Input Bias Current vs Common Mode Voltage Output Saturation Voltage vs Load Current (Output Low) Output Saturation Voltage vs Load Current (Output High) Input Noise Voltage vs Frequency INPUT COMMON MODE VOLTAGE (V) –1.5 OFFSET VOLTAGE (mV) –1.0 0.5 1.0 2 4 5 3.0 RH6200 G04 –0.5 1.5 2.0 2.5 VS = 5V, 0V TYPICAL PART TA = 125°C TA = –55°C TA = 25°C COMMON MODE VOLTAGE (V) INPUT BIAS CURRENT (μA) RH6200 G05 –10 –20 01 35 6 –30 –40 VS = 5V, 0V TA = 125°C TA = –55°C TA = 25°C LOAD CURRENT (mA) 0.01OUTPUT SATURATION VOLTAGE (V) 0.1 1 10 100 RH6200 G06 0.001 0.1 VS = 5V, 0V TA = 125°C TA = –55°C TA = 25°C LOAD CURRENT (mA) 0.1

0.01 OUTPUT SATURATION VOLTAGE (V)

0.1 1 10 100 RH6200 G07 VS = 5V, 0V TA = 125°C TA = –55°C TA = 25°C FREQUENCY (Hz) NOISE VOLTAGE (nV/√Hz) 100k RH6200 G08 100 1k 10k VS = 5V, 0V TA = 25°C PNP ACTIVE V CM = 0.5V NPN ACTIVE V CM = 4.5V BOTH ACTIVE V CM = 2.5V Supply Current vs SHDN Pin Voltage SHDN Pin Current vs SHDN Pin Voltage Gain Bandwidth and Phase Margin vs Temperature SHDN PIN VOLTAGE (V) SUPPLY CURRENT (mA) 1234 RH6200 G09 TA = –55°C TA = 25°C TA = 125°C VS = 5V, 0V SHDN PIN VOLTAGE (V) –50 RH6200 G10 –100 –150 123 5 –200 –250 –300 SHDN PIN CURRENT (μA) TA = 25°C TA = 125°C VS = 5V, 0V TA = –55°C TEMPERATURE (°C) –50

100 GAIN BANDWIDTH (MHz)

PHASE MARGIN (DEG)50 0–25 75 10025 125 VS = ±5V VS = ±5V VS = 5V, 0V VS = 5V, 0V PHASE MARGIN GAIN BANDWIDTH

TYPICAL PERFORMANCE CHARACTERISTICS Distortion vs Frequency, AV = 1 5V Large-Signal Response Open-Loop Gain vs Frequency Slew Rate vs Temperature Settling Time vs Output Step (Noninverting) Settling Time vs Output Step (Inverting) FREQUENCY (Hz) GAIN (dB) PHASE (DEG) –10 100k 10M 100M 1G RH6200 G12 –20 –20 100 120 –40 –60 –80 VCM = 0.5V VCM = 0.5V VCM = 4.5V VCM = 4.5V PHASE GAIN VS = 5V, 0V CL = 5pF RL = 1k TEMPERATURE (°C) –55 –35 –15 5 25 45 65 85 105 SLEW RATE (V/μs) 140 RH6200 G13 125 100 120 AV = –1 RF = RG = 1k RL = 1k VS = ±5V RISING VS = ±2.5V RISING VS = ±2.5V FALLING VS = ±5V FALLING OUTPUT STEP (V) SETTLING TIME (ns) 100 150 200 –3 –2 –1 0 RH6200 G14 1234 500Ω VOUT VIN VS = ±5V AV = 1 TA = 25°C 1mV 1mV 10mV 10mV OUTPUT STEP (V) SETTLING TIME (ns) 100 150 200 –3 –2 –1 0 RH6200 G15 1234 VS = ±5V AV = –1 TA = 25°C 1mV 10mV 10mV 500Ω 500Ω VOUT VIN 1mV FREQUENCY (Hz) 100k –110 DISTORTION (dBc) –100 –90 –80 –70 –50 1M 10M RH6200 G16 –60 HD2, RL = 100Ω HD3, RL = 100Ω HD3, RL = 1k AV = 1 VO = 2VP-P VS = ±5V HD2, RL = 1k 200ns/DIVVS = 5V , 0V AV = 1 RL = 1k 1V/DIV RH6200 G17

TYPICAL PERFORMANCE CHARACTERISTICS ±5V Large-Signal Response Offset Voltage Offset Voltage 200ns/DIVVS = ±5V AV = 1 RL = 1k 2V/DIV RH6200 G18 TOTAL DOSE KRAD (Si) –3.0 OFFSET VOLTAGE (mV) –2.5 –2.0 0.0 –1.5 –1.0 –0.5 10010 1000 RH6200 G19 VS = ±5V VCM = –5V VARIOUS UNITS TOTAL DOSE KRAD (Si) –4.0 OFFSET VOLTAGE (mV) –3.5 –3.0 0.0 –2.5 –2.0 –1.5 –1.0 –0.5 10010 1000 RH6200 G20 VS = ±5V VCM = 5V VARIOUS UNITS Offset Voltage Offset Voltage Input Bias Current TOTAL DOSE KRAD (Si) –30 INPUT BIAS CURRENT (μA) –20 –10 10010 1000 RH6200 G23 VS = 5V, 0V VCM = 5V VCM = 0V TOTAL DOSE KRAD (Si) 0.0 OFFSET VOLTAGE (mV)0.5 1.0 2.0 1.5 10010 1000 RH6200 G21 VS = 5V, 0V VCM = 0V VARIOUS UNITS TOTAL DOSE KRAD (Si) –1.0 OFFSET VOLTAGE (mV)–0.5 0.0 1.0 0.5 10010 1000 RH6200 G22 VS = 5V, 0V VCM = 5V VARIOUS UNITS

TYPICAL PERFORMANCE CHARACTERISTICS Open-Loop Voltage Gain, RL = 1k Open-Loop Voltage Gain, RL = 100Ω Common Mode Rejection Ratio Common Mode Rejection Ratio Power Supply Rejection Ratio TOTAL DOSE KRAD (Si) CMRR (dB) 120 110 100 10010 1000 RH6200 G27 VCM = 0V to 5V VCM = 1.5V to 3.5V VS = 5V, 0V TOTAL DOSE KRAD (Si) CMRR (dB) 120 110 100 10010 1000 RH6200 G28 VS = ±5V VCM = –2V to 2V VCM = –5V to 5V TOTAL DOSE KRAD (Si) OPEN LOOP GAIN (V/mV) 200 125 150 175 100 10010 1000 RH6200 G25 VS = 5V, 0V VS = ±5V TOTAL DOSE KRAD (Si) POWER SUPPLY REJECTION RATIO (dB) 10010 1000 RH6200 G29 VS = ±2.25V TO ±5V TOTAL DOSE KRAD (Si) OPEN LOOP GAIN (V/mV) 10010 1000 RH6200 G26 VS = 5V, 0V VS = ±5V TOTAL DOSE KRAD (Si) –30 INPUT BIAS CURRENT (μA) –20 –10 10010 1000 RH6200 G24 VCM = –5V VCM = 5V VS = ±5V

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. TYPICAL PERFORMANCE CHARACTERISTICS Short-Circuit Current Short-Circuit Current Output Swing Low Output Swing Low Output Swing High Output Swing High TOTAL DOSE KRAD (Si) OUTPUT SWING HIGH (mV) 200 100 150 10010 1000 RH6200 G32 VS = 5V, 0V LOAD = 20mA LOAD = 5mA NO LOAD TOTAL DOSE KRAD (Si) OUTPUT SWING HIGH (mV) 250 100 150 200 10010 1000 RH6200 G33 VS = ±5V LOAD = 20mA LOAD = 5mA NO LOAD TOTAL DOSE KRAD (Si) OUTPUT SWING LOW (mV) 250 100 150 200 10010 1000 RH6200 G30 VS = 5V, 0V LOAD = 20mA LOAD = 5mA NO LOAD TOTAL DOSE KRAD (Si) OUTPUT SWING LOW (mV) 250 100 150 200 10010 1000 RH6200 G31 VS = ±5V LOAD = 20mA LOAD = 5mA NO LOAD TOTAL DOSE KRAD (Si) SHORT CIRCUIT CURRENT (mA) 100 10010 1000 RH6200 G34 VS = 5V, 0V SOURCING SINKING TOTAL DOSE KRAD (Si) SHORT CIRCUIT CURRENT (mA) 100 10010 1000 RH6200 G35 SOURCING SINKING VS = ±5V

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear .com © LINEAR TECHNOLOGY CORPORATION 2011 LT 1111 REV A • PRINTED IN USA I.D. No. 66-10-1028 0807 TYPICAL PERFORMANCE CHARACTERISTICS Supply Current Shutdown Supply Current Shutdown Pin Current TOTAL DOSE KRAD (Si) SUPPLY CURRENT (mA) 10010 1000 RH6200 G36 VS = ±5V VS = 5V, 0V TOTAL DOSE KRAD (Si) 0.0 SHUTDOWN SUPPLY CURRENT (mA) 0.5 1.5 1.0 2.0 10010 1000 RH6200 G37 VS = ±5V VS = 5V, 0V TOTAL DOSE KRAD (Si) –300 SHUTDOWN PIN CURRENT (μA) –200 –250 –100 –150 –50 10010 1000 RH6200 G38 VS = ±5V VS = 5V, 0V

REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER A 11/11 Revised Conditions for A VOL in Table 1: Electrical Characteristics 2