RH27C LINER
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Precision Operational Amplifier TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VOS Input Offset Voltage 1 100 4 300 2, 3 µV ΔVOS Average Offset Drift 4, 7 1.8 µV/°C ΔTemp ΔVOS Long-Term Input Offset 2, 4 2 µV/Month ΔTime Voltage Stability IOS Input Offset Current 75 1 135 2, 3 nA IB Input Bias Current ±80 1 ±150 2, 3 nA TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9) D UESCRIPTIO A UGWA WU WARBSOLUTEX I T I S The RH27C combines very low noise with excellent preci- sion and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz noise and low offset voltage make the RH27C an excellent choice for low frequency military instrumentation applica- tions. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet. BUR -I CIRCUITU U 10k 200Ω 10k 20V –20V OR 20V –20V WU UPACKAGE/ORDER I FOR ATIO TOP VIEW W PACKAGE 10-LEAD CERPAC NC VOS TRIM –IN +IN V NC V OS TRIM OUT NC , LTC and LT are registered trademarks of Linear Technology Corporation. TOP VIEW VOS TRIM VOS TRIM –IN OUT NC+IN V– (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW VOS TRIM –IN +IN V VOS TRIM OUT NC J8 PACKAGE 8-LEAD CERDIP
TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 1 100 130 180 280 400 µV IOS Input Offset Current 75 75 90 120 180 nA IB Input Bias Current ±80 ±80 ±125 ±200 ± 400 nA Input Resistance 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) G Ω Common Mode Input Voltage Range 4 ±11 ±11 ±11 ±11 ± 11 V CMRR Common Mode V CM = ±11V 100 100 97 94 90 dB Rejection Ratio PSRR Power Supply V S = ±4V to ±18V 94 94 92 90 86 dB Rejection Ratio AVOL Large-Signal Voltage Gain R L ≥ 2k, VO = ±10V 700 700 700 700 400 V/mV ZO Open-Loop Output Resistance V O = 0, IO = 0 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω PD Power Dissipation 170 170 170 170 170 mW 100KRAD(Si)50KRAD(Si)20KRAD(Si)10KRAD(Si) 200KRAD(Si) (Preirradiation) (Note 9) TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS en Input Noise Voltage 0.1Hz to 10Hz 4, 5 0.25 µVP-P Input Noise Voltage Density f O = 10Hz 3 8.0 nV/ √Hz fO = 30Hz 4 5.6 nV/ √Hz fO = 1000Hz 4 4.5 nV/ √Hz in Input Noise Current Density f O = 1000Hz 4, 6 0.6 pV/ √Hz Input Resistance 2 G Ω Common Mode Input Voltage Range 4 ±11 ±10.2 V CMRR Common Mode V CM = ±11V 100 1 dB Rejection Ratio V CM = ±10V 94 2, 3 dB PSRR Power Supply V S = ±4V to ±18V 94 1 dB Rejection Ratio V S = ±4.5V to ±18V 86 2, 3 dB AVOL Large-Signal Voltage Gain R L ≥ 2k, VO = ±10V 700 4 300 5, 6 V/mV RL ≥ 600Ω , VO = ±1V 4 200 V/mV VS = ±4V VOUT Maximum Output R L = 2k ±11.5 4 ±10.5 5, 6 V Voltage Swing R L = 600Ω± 10.0 4 V SR Slew Rate R L = 2k 1.7 7 V/ µs GBW Gain-Bandwidth Product f O = 100kHz 4 5 MHz ZO Open-Loop Output Resistance V O = 0, IO = 0 70 Ω PD Power Dissipation 170 1 mW TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10)
TABLE 1A: ELECTRICAL CHARACTERISTICS Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifica- tions unnulled or when nulled with a pot having a range 8kΩ to 20kΩ . Note 8: The RH27C’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7V, the input current should be limited to 25mA. Note 9: V S = ±15V, VCM = 0V unless otherwise noted. Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Long-term input offset voltage stability refers to the averaged trend line of offset voltage vs time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in V OS during the first 30 days are typically 2.5µV. Refer to the typical performance curve. Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. TOTAL DOSE BIAS CIRCUIT 10k 15V –15V +10k –1µF –1µF TYPICAL PERFOR A CE CHARACTERISTICSWU TOTAL DOSE KRAD (Si) POSITIVE SLEW RATE (V/µs) RH27C • TPC01 100 1000 VS = 15V RL = 2k TOTAL DOSE KRAD (Si) NEGATIVE SLEW RATE (V/µs) RH27C • TPC02 100 1000 VS = 15V RL = 2k Positive Slew Rate Negative Slew Rate Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6,7 Group A Test Requirements (Method 5005) 1,2,3,4,5,6,7 Group B and D for Class S, and 1 Group C and D for Class B End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. I.D. No. 66-10-0155 Rev. C 0398 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn- in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TABLE 2: ELECTRICAL TEST REQUIRE E TS U W TYPICAL PERFOR A CE CHARACTERISTICSWU Open-Loop GainInput Offset Voltage Input Bias Current Common Mode Rejection Ratio Input Offset Current TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) RH27C • TPC07 –25 –50 10 100 1000 VS = –15V VCM = 0V Power Supply Rejection Ratio LINEAR TECHNOLOGY CORPORATION 1 993 rh27cc LT/HP 0398 100 REV C • PRINTED IN USA TOTAL DOSE KRAD (Si) 150 100 RH27C • TPC03 –50 –100 10 1000 –150 –200 100 INPUT OFFSET VOLTAGE (µV) VS = –15V VCM = 0V TOTAL DOSE KRAD (Si) 140 150 170 100 RH27C • TPC04 130 120 10 1000 110 100 160 OPEN-LOOP GAIN (dB) VS = – 15V RL = 2k VOUT = – 10V TOTAL DOSE KRAD (Si) 110 120 140 100 RH27C • TPC08 100 10 1000 130POWER SUPPLY REJECTION RATIO (dB) VS = – 4V TO – 18V TOTAL DOSE KRAD (Si) 140 150 170 100 RH27C • TPC06 130 120 10 1000 110 100 160COMMON MODE REJECTION RATIO (dB) VS = – 15V VCM = –11V TOTAL DOSE KRAD (Si) 200 250 350 100 RH27C • TPC05 150 100 10 1000 300 INPUT BIAS CURRENT (nA) VS = – 15V VCM = 0V Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 l (408) 432-1900 FAX: (408) 434-0507 l TELEX: 499-3977 l www.linear-tech.com