RH1499M

RH1499M_15 LINER

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DesCrIptIon

10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp The RH1499 is a quad, rail-to-rail input and output precision C-Load™ op amp with a 10MHz gain-bandwidth product and a 6V/µs slew rate. The RH1499 is designed to maximize input dynamic range by delivering precision performance over the full supply voltage. Using a patented technique, the input stages of the RH1499 are trimmed, one at the negative supply and the other at the positive supply. The resulting guaranteed common mode rejection is much better than other rail- to-rail input op amps. When used as a unity-gain buffer in front of single supply 12-bit A-to-D converters, the RH1499 is guaranteed to add less than 1LSB of error even in single 5V supply systems. With 110dB of supply rejection, the RH1499 maintains its performance over a supply range of 4.5V to 36V . The inputs can be driven beyond the supplies without damage or phase reversal of the output. These op amps remain stable while driving capacitive loads up to 10,000pF . The wafer lots are processed to Linear Technology's in- house Class S flow to yield circuits usable in stringent military and space applications. L, L T , L TC, L TM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. C-Load is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. ABsolute MAxIMuM rAtIngs (Note 1) 16V –16V 50k 100/uni03A9 50k RH1499M BI RH1499M

pACkAge InforMAtIon

–IN A +IN A +IN B –IN B OUT B OUT D –IN D +IN D V +IN C –IN C OUT C W PACKAGE 14-LEAD CERAMIC FLATPAK

tABle 1: eleCtrICAl ChArACterIstICs SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage V CM = V+, V– VCM = 14.5V , –14.5V 200 800 350 1100 2, 3 µV µV Input Offset Voltage Match (Channel-to-Channel) (Note 3) V CM = V+ to V– VCM = 14.5V to –14.5V 3 250 1400 450 1800 µV µV I B Input Bias Current V CM = V+ VCM = 14.5V VCM = V– VCM = –14.5V –715 250 –250 715 –1200 500 –500 1200 2, 3 nA nA nA nA Input Bias Current Match (Channel-to-Channel) (Note 3) V CM = V+, V– VCM = 14.5V , –14.5V 3 0 12 200 400 nA nA I OS Input Offset Current V CM = V+, V– VCM = 14.5V , –14.5V 6 70 300 2, 3 nA nA Input Voltage Range –15 15 –14.5 14.5 V Input Noise Voltage 0.1Hz to 10Hz 400 nV P-P en Input Noise Voltage Density f = 1kHz 12 nV/√Hz in Input Noise Current Density f = 1kHz 0.3 pA/√Hz AVOL Large-Signal Voltage Gain V O = –14.5V to 14.5V , RL = 10k VO = –10V to 10V , RL = 2k 1000 500 5200 2300 4 60 400 100 5, 6 V/mV V/mV CMRR Common Mode Rejection Ratio VCM = V+ to V– VCM = 14.5V to –14.5V 90 102 1 102 2, 3 dB dB CMRR Match (Channel-to-Channel) (Note 3) V CM = V+ to V– VCM = 14.5V to –14.5V 3 84 103 100 dB dB PSRR Power Supply Rejection Ratio V S = ±2V to ±16V 90 110 1 88 100 2, 3 dB PSRR Match (Channel-to-Channel) (Note 3) V S = ±2V to ±16V 3 83 110 82 100 dB VOL Output Voltage Swing (Low) (Note 4) No Load I SINK = 1mA ISINK = 10mA ISINK = 5mA 230 100 500 180 150 500 5, 6 mV mV mV mV V OH Output Voltage Swing (High) (Note 4) No Load I SOURCE = 1mA ISOURCE = 10mA ISOURCE = 5mA 2.5 420 150 800 100 300 250 800 5, 6 mV mV mV mV I SC Short-Circuit Current ±15 ±30 1 ±7.5 ±12 2, 3 mA IS Supply Current per Amp 1.8 2.5 1 2.2 3 2, 3 mA GBW Gain-Bandwidth Product f = 100kHz 6.8 10.5 5.8 8.5 MHz SR Slew Rate AV = –1, RL = 10k, VO = ±10V , Measure at VO = ±5V 3.5 6 4 2.2 4 5, 6 V/µs (Preirradiation) VS = ±15V , VCM = VOUT = 0V , unless otherwise noted.

tABle 1A: eleCtrICAl ChArACterIstICs (Postirradiation) VS = ±15V , VCM = 0V , TA = 25°C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS NOTES 10Krad (Si) 20Krad (Si) 50Krad (Si) 100Krad (Si) 200Krad (Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage V CM = V+, V– 950 950 950 950 950 µV IB Input Bias Current V CM = V+, V– 765 815 865 915 965 nA IOS Input Offset Current V CM = V+, V– 100 100 100 100 100 nA Input Voltage Range V– V+ V– V+ V– V+ V– V+ V– V+ V AVOL Large-Signal Voltage Gain VO = –14.5V to 14.5V , RL = 10k 500 500 500 500 500 V/mV VO = –10V to 10V , RL = 2k 250 250 250 250 250 V/mV CMRR Common Mode Rejection Ratio VCM = V+ to V– 86 86 86 86 86 dB CMRR Match (Channel-to-Channel) V CM = V+ to V– 3 83 83 83 83 83 dB PSRR Power Supply Rejection Ratio VS = ±2V to ±16V 90 90 90 90 90 dB PSRR Match (Channel-to-Channel) V S = ±2V to ±16V 3 83 83 83 83 83 dB VOUT Output Voltage Swing Low No Load I SINK = 1mA ISINK = 10mA 100 500 100 500 100 500 100 500 100 500 mV mV mV Output Voltage Swing High No Load I SOURCE = 1mA ISOURCE = 10mA 150 800 150 800 150 800 150 800 150 800 mV mV mV I SC Short-Circuit Current ±10 ±10 ±10 ±10 ±10 mA GBW Gain-Bandwidth Product SR Slew Rate AV = –1, RL = 10k, VO = ±10V , Measure at VO = ±5V 3 3 3 3 3 V/µs

tABle 2: eleCtrICAl ChArACterIstICs (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage V CM = V+, V– VCM = V+ – 0.5V , V– + 0.5V 150 800 300 1100 2, 3 µV µV Input Offset Voltage Match (Channel-to-Channel) (Note 3) V CM = V+ to V– VCM = V+ – 0.5V , V– + 0.5V 3 200 1400 350 1800 µV µV I B Input Bias Current V CM = V+ VCM = V+ – 0.5V VCM = V– VCM = V– + 0.5V –650 250 –250 650 –1100 450 –450 1100 2, 3 nA nA nA nA Input Bias Current Match (Channel-to-Channel) (Note 3) V CM = V+, V– VCM = V+ – 0.5V , V– + 0.5V 0 10 180 400 nA nA I OS Input Offset Current V CM = V+, V– VCM = V+ – 0.5V , V– + 0.5V 5 65 300 2, 3 nA nA Input Voltage Range V Input Noise Voltage 0.1Hz to 10Hz 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/√Hz in Input Noise Current Density f = 1kHz 0.3 pA/√Hz CIN Input Capacitance 5 pF AVOL Large-Signal Voltage Gain V S = 5V , VO = 75mV to 4.8V , RL = 10k 600 3800 4 60 210 5, 6 V/mV CMRR Common Mode Rejection Ratio VS = 5V , VCM = V+ to V– VS = 5V , VCM = 0.5V to 4.5V 76 90 dB dB CMRR Match (Channel-to-Channel) (Note 3) V S = 5V , VCM = V+ to V– VS = 5V , VCM = 0.5V to 4.5V 75 91 dB dB PSRR Power Supply Rejection Ratio VS = 4.5V to 12V , VCM = VO = 0.5V 88 105 1 86 104 2, 3 dB PSRR Match (Channel-to-Channel) (Note 3) V S = 4.5V to 12V , VCM = VO = 0.5V 3 82 120 80 118 dB VOL Output Voltage Swing (Low) (Note 4) No Load I SINK = 1mA ISINK = 2.5mA 100 200 110 150 220 5, 6 mV mV mV V OH Output Voltage Swing (High) (Note 4) No Load I SOURCE = 1mA ISOURCE = 2.5mA 2.5 140 150 250 100 180 250 300 5, 6 mV mV mV I SC Short-Circuit Current V S = 5V ±12.5 24 1 ±5 ±10 2, 3 mA IS Supply Current per Amp 1.7 2.2 1 2 2.7 2, 3 mA GBW Gain-Bandwidth Product V S = 5V , f = 100kHz 6.8 10.5 5.8 8.5 MHz SR Slew Rate VS = ±2.5V , AV = –1, RL = 10k,VO = ±2V , Measure at VO = ±1V 2.6 4.5 4 2 3.6 5, 6 V/µs

Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: A heat sink may be required to keep the junction temperature below this absolute maximum rating when the output is shorted indefinitely. tABle 2A: eleCtrICAl ChArACterIstICs (Postirradiation) VS = 5V; VCM = half supply, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS NOTES 10Krad (Si) 20Krad (Si) 50Krad (Si) 100Krad (Si) 200Krad (Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage V CM = V+, V– 950 950 950 950 950 µV IB Input Bias Current V CM = V+, V– 700 750 800 850 900 nA IOS Input Offset Current V CM = V+, V– 65 65 65 65 65 nA Input Voltage Range V– V+ V– V+ V– V+ V– V+ V– V+ V AVOL Large-Signal Voltage Gain VO = 75mV to V+ – 0.2V R1 = 10k 300 300 300 300 300 V/mV CMRR Common Mode Rejection Ratio VCM = V+ to V– 70 70 70 70 70 dB CMRR Match (Channel-to-Channel) V CM = V+ to V– 3 70 70 70 70 70 dB PSRR Power Supply Rejection Ratio VS = 4.5V to 12V , VCM = VO = 0.5V 88 88 88 88 88 dB PSRR Match (Channel-to-Channel) V S = 4.5V to 12V , VCM = VO = 0.5V 3 82 82 82 82 82 dB VOUT Output Voltage Swing Low No Load I SINK = 1mA ISINK = 2.5mA 100 200 100 200 100 200 100 200 100 200 mV mV mV Output Voltage Swing High No Load I SOURCE = 1mA ISOURCE = 2.5mA 150 250 150 250 150 250 150 250 150 250 mV mV mV I SC Short-Circuit Current ±8 ±8 ±8 ±8 ±8 mA SR Slew Rate VS = ±2.5V , AV = –1, RL = 10k, VO = ±2V , Measure at VO = ±1V 2 2 2 2 2 V/µs Note 3: Matching parameters are the difference between amplifiers A and D and between B and C. Note 4: Output voltage swings are measured between the output and power supply rails.

tABle 2: eleCtrICAl test requIreMents 15V –15V RH1499 TC 40pF MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S, and End Point Electrical Parameters (Method 5005) 1,2,3 *PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given.

typICAl perforMAnCe ChArACterIstICs Large-Signal Voltage Gain Large-Signal Voltage Gain Slew Rate Supply Current per Amp Input Offset Voltage Input Offset Current Input Bias Current Common Mode Rejection Ratio Power Supply Rejection Ratio TOTAL DOSE-Krad (Si) AVOL (V/mV) 8000 6000 4000 2000 10 100 1000 RH1499 G01 VS = ±15V VO = ±14.5V VS = 5V VO = 75mV TO 4.8V RL = 10k TOTAL DOSE-Krad (Si) AVOL (V/mV) 4000 3000 2000 1000 10 100 1000 RH1499 G02 VS = ±15V VO = ±10V RL = 2k TOTAL DOSE-Krad (Si) SLEW RATE (V/µs) 10 100 1000 RH1499 G03 VS = ±15V VO = ±10V RL = 10k TOTAL DOSE-Krad (Si) IS (mA) 10 100 1000 RH1499 G04 VS = ±15, 5V TOTAL DOSE-Krad (Si) IOS (nA) –20 –40 –60 –80 10 100 1000 RH1499 G06 VS = ±15V, 5V VCM = 0V TOTAL DOSE-Krad (Si) IB (nA) –200 –400 –600 –800 10 100 1000 RH1499 G07 VS = ±15V, 5V VCM = 0V TOTAL DOSE-Krad (Si) CMRR (dB) 130 120 110 100 10 100 1000 RH1499 G08 V– ≤ VCM ≤ V+ VS = ±15V VS = 5V TOTAL DOSE-Krad (Si) PSRR (dB) 160 140 120 100 10 100 1000 RH1499 G09 ±2V ≤ VS ≤ ±16V VCM = 0V TOTAL DOSE-Krad (Si) VOS (µV) 800 600 400 200 –200 –400 –600 –800 10 100 1000 RH1499 G05 VS = ±15V, 5V VCM = 0V

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear .com  LINEAR TECHNOLOGY CORPORATION 2003 ID No. 66-10-1499 • LT 0110 REV F • PRINTED IN USA typICAl perforMAnCe ChArACterIstICs Supply Current vs Supply Voltage Supply Current vs Temperature Input Bias Current vs Common Mode Voltage Open-Loop Voltage Gain vs Temperature Input Bias Current vs Temperature Output Saturation Voltage vs Load Current (Output High) Output Saturation Voltage vs Load Current (Output Low) TOTAL SUPPLY VOLTAGE (V) SUPPLY CURRENT PER AMPLIFIER (mA) 1.0 1.5 RH1499 G10 0.5 8 16 244 3612 20 28 2.0 TA = 125°C TA = 25°C TA = –55°C TEMPERATURE (°C) –50 SUPPLY CURRENT PER AMPLIFIER (mA) RH1499 G11 1.0 0.5 –25 0 50 2.0 1.5 75 100 125 VS = ±15V VS = 5V, 0V COMMON MODE VOLTAGE (V) INPUT BIAS CURRENT (nA) 200 2 3 4 5 6 RH1499 G12 –200 –400 –1 0 1 400 –100 100 –300 300 VS = 5V, 0V TA = 125°C TA = 25°C TA = –55°C TEMPERATURE (°C) –50 –25 OPEN LOOP VOLTAGE GAIN (V/mV) 100 1000 10000 0 25 50 75 100 125 RH1499 G13 RL = 2k VS = ±15V TEMPERATURE (°C) –50 INPUT BIAS CURRENT (nA) 400 300 200 100 –100 –200 –300 –400 RH1499 G14 –20 10 40–35 85–5 25 55 100 VS = 5V, 0V VCM = 5V VS = 5V, 0V VCM = 0V VS = ±15V VCM = 15V VS = ±15V VCM = –15V NPN ACTIVE PNP ACTIVE LOAD CURRENT (mA) SATURATION VOLTAGE (mV) 100 0.001 0.1 1 10 RH1499 G15 0.01 1000 TA = –55°C TA = 25°C TA = 125°C LOAD CURRENT (mA) SATURATION VOLTAGE (mV) 100 0.001 0.1 1 10 RH1499 G16 0.01 1000 TA = –55°C TA = 25°C TA = 125°C