RH129 LINER

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6.9V Precision Reference Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VZ Reverse Breakdown Voltage 0.6mA I R 15mA 6.7 7.2 1 V V Z Reverse Breakdown 0.6mA I R 15mA 14 mV I R Voltage Change with Current 1mA I R 15mA 12 mV V Z Temperature Coefficient I R = 1mA, RH129A 10 2, 3 ppm/°C Temp RH129B 20 2, 3 ppm/°C RH129C 50 2, 3 ppm/°C Change in TC 1mA I R 15mA 1 ppm/°C rZ Dynamic Impedance I R = 1mA 2 1mA I R 15mA 1 0.8 en RMS Noise 10Hz f 10kHz 2 20 1 µV V Z Long Term Stability T A = 25°C ± 0.1°C, Time I R = 1mA ±0.3% 20 ppm/kHr TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) –55°C T A 125°C D UESCRIPTIO A UGWA WU WARBSOLUTEX I T I S The RH129 precision reference features excellent stability over a wide range of voltage, temperature and operating current conditions. The device achieves low dynamic impedance by incorporating a high gain shunt regulator around the Zener. The excellent noise performance of the device is achieved by using a buried Zener design which eliminates surface noise usually associated with ordinary Zeners. The wafer lots are processed to LTC's in-house Class S flow to yield circuits usable in stringent military applica- tions. , LTC and LT are registered trademarks of Linear Technology Corporation. BUR -I CIRCUITU U 10k 20V RH1009 BI PACKAGE INFORMATIONUU W BOTTOM VIEW H PACKAGE 2-LEAD TO-46 METAL CAN TOTAL DOSE BIAS CIRCUIT 12.4k 15V RH129 TDBC1

SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS V Z Reverse Breakdown Voltage 0.6mV I R 15mA 14 14 20 30 50 mV I Z Change with Current V Z Temperature Coefficient I R = 1mA, RH129A 10 10 10 15 20 ppm/°C Temp –55°C T A 125°C RH129B 20 20 20 25 30 ppm/°C RH129C 50 50 50 55 60 ppm/°C TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 3) 50KRAD(Si)20KRAD(Si)10KRAD(Si) 100KRAD(Si) 200KRAD(Si) Note 1: Guaranteed by design, characterization or correlation to other tested parameters. Note 2: Guaranteed by correlation testing including enhancements for popcorn noise detection. Note 3: TA = 25°C unless otherwise noted.  LINEAR TECHNOLOGY CORPORATION 1 990 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 l (408) 432-1900 FAX: (408) 434-0507 l TELEX: 499-3977 l www.linear-tech.com LT/HP 0497 500 REV A • PRINTED IN USA I.D. No. 66-10-0174 Rev. A 0397 Reverse Dynamic Impedance TOTAL DOSE KRAD (Si) REVERSE DYNAMIC IMPEDANCE (HRS) 10 100 1000 RH129 • TPC04 VS = –15V VCM = 0V Temperature Coefficient TOTAL DOSE KRAD (Si) 1 10 100 1000 TEMPERATURE COEFFICIENT (ppm/°C) –10 –15 RH129 • TPC03 IR ≤ 1mA TABLE 2: ELECTRICAL TEST REQUIRE E TS U W MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*, 2, 3 Group A Test Requirements (Method 5005) 1, 2, 3 Group B and D for Class S and Group C and D for Class B 1 End Point Electrical Parameters (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. PDA Test Notes: The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TYPICAL PERFORMANCE CHARACTERISTICS UW Reverse Breakdown Voltage Change with Current TOTAL DOSE KRAD (Si) 1 10 100 1000 REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) –10 –15 –20 –25 –30 RH129 • TPC02 0.6mA ≤ IR ≤ 15mA Reverse Breakdown Voltage TOTAL DOSE KRAD (Si) 1 10 100 1000 REVERSE BREAKDOWN VOLTAGE (V) 7.03 7.02 7.01 7.00 6.99 6.98 6.97 RH129 • TPC01 IR = 1mA