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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. L, L T , L TC, L TM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. DIE CROSS REFERENCE L TC Finished Part Number Order DICE CANDIDATE Part Number RH1078M RH1078M DICE Please refer to L TC standard product data sheet for other applicable product information. Micropower, Dual, Single-Supply Precision Op Amp DICE ELECTRICAL TEST LIMITS T A = 25°C, VS = 5V, VCM = 0.1V, VOUT = 1.4V, unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN MAX UNITS VOS Input Offset Voltage 120 μV IOS Input Offset Current 0.8 nA IB Input Bias Current 15 nA CMRR Common Mode Rejection Ratio V CM = 0V to 3.5V VCM = 0.05V to 3.2V 94 dB dB PSRR Power Supply Rejection Ratio V S = 2.3V to 12V VS = 3.1V to 12V 100 dB dB PAD FUNCTION OUTA –INA +INA +INB –INB OUTB 12mils thick, backside (substrate) is an alloyed gold layer . Connect backside to V–. 90 × 97 mils

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2005 LT 0912 REV A • PRINTED IN USA Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-13-1078 DICE ELECTRICAL TEST LIMITS T A = 25°C, VS = 5V, VCM = 0.1V, VOUT = 1.4V, unless otherwise specifi ed. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Power supply rejection ratio is measured at the minimum supply voltage. SYMBOL PARAMETER CONDITIONS MIN MAX UNITS AVOL Large-Signal Voltage Gain V O = 0.03V to 4V , No Load VO = 0.03V to 3.5V , RL = 50k VO = 0.05V to 4V , No Load VO = 0.05V to 3.5V , RL = 50k 150 120 V/mV V/mV V/mV V/mV V OUT Output Voltage Swing Output Low, No Load Output Low, 2k to GND Output Low, I SINK = 100μA Output High, No Load Output High, 2k to GND 4.2 3.5 130 mV mV mV V V SR Slew Rate A V = 1, VS = ±2.5V 0.04 75 V/μs IS Supply Current Per Amplifier 2.3 μA Minimum Supply Voltage Note 2 350 V SYMBOL PARAMETER CONDITIONS MIN MAX UNITS VOS Input Offset Voltage 350 μV IOS Input Offset Current 0.8 nA IB Input Bias Current 15 nA Input Voltage Range 13.5 –15.0 V V CMRR Common Mode Rejection Ratio V CM = 13.5V , –15V VCM = 13V , –14.9V 97 dB dB PSRR Power Supply Rejection Ratio V S = 5V , 0V to ±18V 100 dB AVOL Large-Signal Voltage Gain V O = ±10V , RL = 50k VO = ±10V , RL = 2k VO = ±10V , RL = 5k 1000 300 V/mV V/mV V/mV V OUT Output Voltage Swing RL = 50k RL = 2k RL = 5k ±13 ±11 V V V SR Slew Rate 0.06 V/μs I S Supply Current Per Amplifier 100 μA TA = 25°C, VS = ±15V, unless otherwise specifi ed.