RH1034-1_15 LINER

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Technical content

RH1034-1.2

DESCRIPTION

(Note 1)

PACKAGE INFORMATION

The RH1034-1.2 is a micropower , precision 1.2V reference combined with a 7V auxiliary reference. The 1.2V reference is a trimmed, thin-fi lm, band-gap, voltage reference oper- ating on only 20μA of quiescent current. The RH1034-1.2 offers guaranteed drift, low temperature cycling hysteresis and good long-term stability. The low dynamic impedance makes the RH1034-1.2 easy to use from unregulated sup- plies. The 7V reference is a subsurface zener device for less demanding applications. The wafer lots are processed to Linear Technology’s in- house Class S fl ow to yield circuits usable in stringent military applications. 14k 20V 19.1k 1.2V RH10341.2 BC BURN-IN CIRCUIT BOTTOM VIEW H PACKAGE 3-LEAD TO-46 METAL CAN 1.2V TOP VIEW W PACKAGE 10-LEAD CERPAC NC NC 1.2V NC NC NC GND NC NC L, L T , L TC, L TM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.

RH1034-1.2 TABLE 1: ELECTRICAL CHARACTERISTICS(Preirradiation) SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX SUB- GROUP MIN TYP MAX SUB- GROUP UNITS 1.2V Reference V Z Reverse Breakdown Voltage I R = 100μA 1.210 1.240 1 1.195 1.255 2, 3 V ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 20μA ≤ IR ≤ 2mA 2mA ≤ IR ≤ 20mA 2.0 8.0 4.0 15.0 2, 3 2, 3 mV mV Minimum Operating Current 20 1 30 2, 3 μA Temperature Coeffi cient I R = 100μA 60 1 60 2, 3 ppm/°C rz Reverse Dynamic Impedance IR = 100μA 3 1.0 1 2.0 2, 3 Ω Low Frequency Noise I R = 100μA, 0.1Hz ≤ f ≤ 10Hz 4 μV P-P Long-Term Stability I R = 100μA 20 ppm/√ kHrs 7V Reference V Z Reverse Breakdown Voltage I R = 100μA 6.70 7.30 1 6.60 7.40 2, 3 V ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 100μA ≤ IR ≤ 1mA 1mA ≤ IR ≤ 20mA 140 250 190 350 2, 3 2, 3 mV mV Temperature Coeffi cient I R = 100μA 60 ppm/°C Long-Term Stability I R = 100μA 20 ppm/√ kHrs TA = 25°C –55°C ≤ T A ≤ 125°C Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. TABLE 2: ELECTRICAL CHARACTERISTICS(Postirradiation) TA = 25°C. SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.2V Reference V Z Reverse Breakdown Voltage ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 20μA ≤ I R ≤ 2mA 2mA ≤ IR ≤ 20mA 7.0 15.0 7.5 16.5 8.5 18.5 10.0 22.5 12.5 30.5 mV mV rz Reverse Dynamic Impedance 7V Reference VZ Reverse Breakdown Voltage ΔVZ ΔIR Reverse Breakdown Voltage Change with Current 100μA ≤ I R ≤ 1mA 1mA ≤ IR ≤ 20mA 175 300 175 300 175 300 175 300 175 300 mV mV 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) Note 2: Forward biasing either diode will affect the operation of the other diode. Note 3: This parameter guaranteed by “reverse breakdown voltage change with current” test.

RH1034-1.2 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However , no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. TABLE 4: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3 Group A Test Requirements (Method 5005) 1,2,3 Group B and D for Class S, End Point Electrical Parameters (Method 5005) 1,2,3 *PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specifi ed as 5% based on failures from group A, subgroup 1, tests after cooldown as the fi nal electrical test in accordance with method 5004 of MIL-STD-883. The verifi ed failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT TABLE 3: POST BURN-IN ENDPOINTS AND DELTA LIMITS REQUIREMENTS TA = 25°C SYMBOL PARAMETER CONDITIONS ENDPOINTS LIMITS DEL TA LIMITS UNITSMIN MAX MIN MAX VZ Reverse Breakdown Voltage I R = 100μA 1.210 1.240 –0.003 0.003 V 14k 20V 19.1k 1.2V RH10341.2 BC

RH1034-1.2 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear .com © LINEAR TECHNOLOGY CORPORATION 2008 LT 0909 REV C • PRINTED IN USA I.D. No. 66-10-103412 TOTAL DOSE KRAD (Si) 1.220REVERSE BREAKDOWN VOLTAGE (V) 1.260 1.270 1.280 10 100 1000 RH10341.2 G01 1.250 1.240 1.230 IR = 100μA TYPICAL PERFORMANCE CHARACTERISTICS Reverse Breakdown Voltage Change with Current (1.2V)Reverse Breakdown Voltage (1.2V) TOTAL DOSE KRAD (Si) 2.0 REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 3.0 4.5 4.0 10 100 1000 RH10341.2 G02 1.0 1.5 2.5 3.5 0.5 20μA ≤ IR ≤ 2mA Reverse Breakdown Voltage Change with Current (1.2V) TOTAL DOSE KRAD (Si) REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 10 100 1000 RH10341.2 G03 2mA ≤ IR ≤ 20mA Reverse Breakdown Voltage Change with Current (7V)Reverse Breakdown Voltage (7V) Reverse Breakdown Voltage Change with Current (7V) TOTAL DOSE KRAD (Si) 6.997REVERSE BREAKDOWN VOLTAGE (V) 7.000 7.001 7.002 10 100 1000 RH10341.2 G04 6.999 6.998 IR = 100μA TOTAL DOSE KRAD (Si) 92.2 REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 92.6 93.0 10 100 1000 RH10341.2 G05 91.8 92.0 92.4 92.8 91.6 91.4 100μA ≤ IR ≤ 1mA TOTAL DOSE KRAD (Si) 166 REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 168 170 172 10 100 1000 RH10341.2 G06 164 162 160 158 1mA ≤ IR ≤ 20mA