RH1011

RH1011 LINER

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The RH1011 is a general purpose comparator with signifi- cantly better input characteristics than the LM111. Al- though pin compatible with the LM111, it offers four times lower bias current, six times lower offset voltage and five times higher voltage gain. The wafer lots are processed to Linear Technology’s in- house Class S flow to yield circuits usable in stringent military applications. Operating Temperature Range ABSOLUTE MAXIMUM RATINGSW WW UDESCRIPTIONU , LTC and LT are registered trademarks of Linear Technology Corporation. 18V –18V 200Ω 1.3k 50k 50k 50k 5 – 15V –15V RH1011 BI 100k 604Ω PACKAGE I FOR ATIOU UW TOP VIEW BALANCE/ STROBE GND –INPUT OUTPUT BALANCE +INPUT H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW W PACKAGE 10-LEAD CERPAC GND +INPUT –INPUT NC V OUTPUT NC BALANCE/ STROBE BALANCE TOP VIEW GND +INPUT –INPUT V OUTPUT J8 PACKAGE 8-LEAD CERDIP BALANCE/ STROBE BALANCE OR

–55°C T A 125°C (Preirradiation) (Note 10)TABLE 1: ELECTRICAL CHARACTERISTICS TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VOS Input Offset Voltage 3 1.5 1 3.0 2,3 mV RS 50k 4 2.0 1 3.0 2,3 mV IOS Input Offset Curret 4 4 1 6 2,3 nA IB Input Bias Current 3 50 1 80 2,3 nA 4 65 1 80 2,3 nA V OS Input Offset Voltage Drift T MIN T T MAX 5,9 25 µV/°C T AVOL Large Signal Voltage Gain R = 1k to 15V, 200 4 V/mV –10V V OUT 14.5V R = 500 to 5V, 50 4 V/mV 0.5V V OUT 4.5V CMRR Common Mode Rejection 90 1 dB Ratio Input Voltage Range V S = ±15V 8,9 –14.5 13 –14.5 13 V VS = Single 5V 8,9 0.5 3.0 0.5 3.0 V td Response Time 6,9 250 ns VOL Output Saturation Voltage V IN = 5mV, ISINK = 8mA 0.4 1 0.5 2,3 V V1 = 0V, ISINK = 50mA 1.5 1 1.5 2,3 V Output Leakage Current V IN = 5mV, V1 = –15V, 10 1 500 2,3 nA VOUT = 20V Positive Supply Current 4.0 1 mA Negative Supply Current 2.5 1 mA Strobe Current Minimum to Ensure Output 7,9 500 µA Transisor is Turned Off Input Capacitance 6 pF 10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 1.5 1.5 1.5 1.5 2 mV IOS Input Offset Current 4 4 4 20 50 nA IB Input Bias Current 50 100 150 200 300 nA AVOL Large-Signal Voltage Gain R = 1k to 15V 200 200 150 100 50 V/mV –10V V OUT 14.5V CMRR Common Mode Rejection 90 90 90 90 86 dB Ratio Output Leakage Current V IN = 5mV, V1 = –15V 10 10 100 100 100 nA VOUT = 20V TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10)

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. TABLE 1A: ELECTRICAL CHARACTERISTICS 10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS Strobe Current Minimum to Ensure Output 7,9 500 500 500 500 500 µA Transistor is Truned Off Input Capacitance 6 (Typ) 6 (Typ) 6 (Typ) 6 (Typ) 6 (Typ) pF (Postirradiation) (Note 10) MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4 Group A Test Requirements (Method 5005) 1,2,3,4 Group C and D End Point Electrical Parameters 1 (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TABLE 2: ELECTRICAL TEST REQUIRE E TS U W Note 1: Inputs may be clamped to supplies with diodes so that maximum input voltage actually exceeds supply voltage by one diode drop. See Input Protection discussion in the LT 1011 data sheet. Note 2: TJMAX = 150°C. Note 3: Output is sinking 1.5mA with VOUT = 0V. Note 4: These specifications apply for all supply voltages from a single 5V to ±15V, the entire input voltage range and for both high and low output states. The high state is I SINK 100µA, V OUT (V + – 1V) and the low state is ISINK 0.8V. Therefore, this specication defines a worst-case error band that includes effects due to common mode signals, voltage gain and output load. Note 5: Drift is calculated by dividing the offset difference measured at minimum and maximum temperatures by the temperature difference. Note 6: Response time is measured with a 100mV step and 5V overdrive. The output load is a 500 resistor tied to 5V. Time measurement is taken when the output crosses 1.4V. Note 7: Do not short the STROBE pin to ground. It should be current driven at 3mA to 5mA for the shortest strobe time. Currents as low as 500µA will strobe the RH1011 if speed is not important. External leakage on the STROBE pin in excess of 0.2µA when the strobe is “off ” can cause offset voltage shifts. Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the LT1011 data sheet. Note 9: Guaranteed by design, characterization or correlation to other tested parameters. Note 10: V S = ±15V, V CM = 0V, RS = 0 , T A = 25°C, V1 = –15V, output at Pin 7, unless otherwise noted. 12V 5.1k –12V RH1011 TDBC 12Ω 12Ω 5.1k TOTAL DOSE BIAS CIRCUIT

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 l FAX: (408) 434-0507 l TELEX: 499-3977  LINEAR TECHNOLOGY CORPORA TION 1989 LT/HP 0896 REV A 500 • PRINTED IN USA I.D. No. 66-10-0159 Rev. A 0896 TYPICAL PERFORMANCE CHARACTERISTICS UW Input Offset Voltage Input Offset CurrentInput Bias Current TOTAL DOSE KRAD (Si) INPUT OFFSET VOLTAGE (mV) 10 100 1000 RH1011 G01 VS = –15V RS = 0Ω VCM = 0V TOTAL DOSE KRAD (Si) INPUT BIAS CURRENT (nA) 300 200 100 10 100 1000 RH1011 G02 VS = –15V VCM = 0V TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) –10 –20 –30 –40 10 100 1000 RH1011 G03 VS = –15V VCM = 0V Voltage Gain Common Mode Rejection Ratio TOTAL DOSE KRAD (Si) VOLTAGE GAIN (V/mV) 700 600 500 400 300 200 100 10 100 1000 RH1011 G04 VS = –15V RL = 1k VCM = 0V TOTAL DOSE KRAD (Si) COMMON MODE REJECTION RATIO (dB) 130 120 110 100 10 100 1000 RH1011 G05 VS = –15V VCM = 14.5V TO 13V