RH1009 LINER
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2.5V Reference TJ = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VZ Reverse Breakdown I R = 1mA 2.495 2.505 1 V Voltage ΔVZ Reverse Breakdown 400 µA ≤ IR ≤ 10mA 6 1 10 2,3 mV ΔIR Voltage Change with Current rZ Reverse Dynamic I R = 1mA 1 0.6 1 Ω Impedance ΔVZ Temperature Stability 1 15 mV ΔVZ Long Term Stability T A = 25°C ±0.1°C, 20 ppm/kHr ΔTime I R = 1mA TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) D UESCRIPTIO A UGWA WU WARBSOLUTEX I T I S The RH1009 is a general purpose 2.5V shunt regulator diode designed to operate over a wide current range while maintaining good stability with time and temperature. The adjust terminal allows either temperature coefficient to be minimized or the reference voltage to be adjusted without changing the temperature coefficient. Because it operates as a shunt regulator it can be used equally well as a positive or negative reference. The wafer lots are processed to Linear Technology’s in- house Class S flow to yield circuits usable in stringent military applications. , LTC and LT are registered trademarks of Linear Technology Corporation. WU UPACKAGE/ORDER I FOR ATIOBUR -I CIRCUITU U 20V RH1009 BI NC BOTTOM VIEW ADJ H PACKAGE 3-LEAD TO-46 METAL CAN Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS Voltage ΔVZ Reverse Breakdown Voltage 400 µA ≤ IR ≤ 10mA 6 6 8 10 12 mV ΔIZ Change with Current Impedance TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 2) 50KRAD(Si)20KRAD(Si)10KRAD(Si) 100KRAD(Si) 200KRAD(Si) Note 1: Guaranteed by design, characterization or correlation to other tested parameters. Note 2: TA = 25°C unless otherwise noted. TOTAL DOSE BIAS CIRCUIT LINEAR TECHNOLOGY CORPORATION 1 990 LT/HP 0497 500 REV B • PRINTED IN USA I.D. No. 66-10-0174 Rev. B 0497 12.4k 15V RH1009 TDBC TABLE 2: ELECTRICAL TEST REQUIRE E TS U W MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3 Group A Test Requirements (Method 5005) 1,2,3 Group C and D End Point Electrical Parameters 1 (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn- in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE KRAD (Si) REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) –10 –12 –14 10 100 1000 RH1009 G02 600µA ≤ IR ≤ 10mA Reverse Breakdown Voltage Change with CurrentReverse Breakdown Voltage TOTAL DOSE KRAD (Si) REVERSE BREAKDOWN VOLTAGE (V) 2.502 2.501 2.500 2.499 2.498 10 100 1000 RH1009 G01 IR = 1mA TYPICAL PERFORMANCE CHARACTERISTICS UW Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 l (408) 432-1900 FAX: (408) 434-0507 l TELEX: 499-3977 l www.linear-tech.com